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SPT02-236DDB产品简介:
ICGOO电子元器件商城为您提供SPT02-236DDB由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SPT02-236DDB价格参考。STMicroelectronicsSPT02-236DDB封装/规格:TVS - 二极管, 。您可以下载SPT02-236DDB参考资料、Datasheet数据手册功能说明书,资料中有SPT02-236DDB 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TVS DIODE 36VWM 46VC 2QFNTVS 二极管 - 瞬态电压抑制器 Power Line Surge 6V to 36V 300mA |
产品分类 | |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,STMicroelectronics SPT02-236DDBSPT |
mouser_ship_limit | 该产品可能需要其他文件才能进口到中国。 |
数据手册 | |
产品型号 | SPT02-236DDB |
不同频率时的电容 | - |
产品种类 | TVS 二极管 - 瞬态电压抑制器 |
供应商器件封装 | 2-uQFN (3.3x1.5) |
其它名称 | 497-13827-1 |
击穿电压 | 41.4 V |
功率-峰值脉冲 | 1400W (1.4kW) |
包装 | 剪切带 (CT) |
单向通道 | 2 |
双向通道 | - |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 2-WDFN 裸露焊盘 |
封装/箱体 | UQFN-2L |
峰值浪涌电流 | 3 A |
峰值脉冲功率耗散 | 1.4 kW |
工作温度 | -40°C ~ 150°C (TJ) |
工作电压 | - 30 V to + 35 V |
工厂包装数量 | 3000 |
应用 | 通用 |
最大工作温度 | + 100 C |
最小工作温度 | - 40 C |
极性 | Unidirectional |
标准包装 | 1 |
电压-击穿(最小值) | 38V |
电压-反向关态(典型值) | 36V |
电压-箝位(最大值)@Ipp | 46V |
电流-峰值脉冲(10/1000µs) | 2A (8/20µs) |
电源线路保护 | 无 |
端接类型 | SMD/SMT |
类型 | 齐纳 |
系列 | SPT02-236DDB |
钳位电压 | 44 V |
SPT02-236DDB Automation sensor transient and overvoltage protection − Datasheet production data Applications • Factory automation sensor application • Proximity sensor interface protection • Transient and surge voltage protection • Compliant with sensor standard, EN 60947-5-2 µQFN-2L SPT02-236DDB Description Features The SPT02 is specifically designed for the protection of 24 V proximity sensors. It • Double diode array for switch protection and implements the reverse polarity and the reverse blocking protection overvoltage protection of the sensor power supply • 6 V to 36 V supply voltage range and the power switch overvoltage protection. • Minimum breakdown voltage V : 38 V It provides a very compact and flexible solution. BR • 8/20 µs 2 A maximum clamping voltage: 46 V Thanks to high performance ST technology, the • Blocking diode drop forward voltage V : SPT02 protects the proximity sensor to the F highest level compliant with IEC 61000-4-2, IEC 1.1 V at 300 mA 61000-4-4 and IEC 61000-4-5 standards. • Blocking diode maximum 10 ms square pulse current I : 3 A FSM Figure 1. Functional diagram (top view) • Ambient temperature: -40 °C to +100 °C • µQFN 2L 0.8 mm flat package K D1 D2 Complies with following standards A1 A2 • Voltage surge: IEC 61000-4-5, R = 500 Ω, CC ±1 kV • Electrostatic discharge, IEC 61000-4-2: – ±8 kV contact discharge Figure 2. Bottom view – ±15 kV air discharge • Electrical transient immunity: IEC 61000-4-4: ±2 kV Benefits • Compliant for interface with logic input type 1, 2 and 3 IEC 61131-2 standard • Highly compact with integrated power solution in SMD version March 2014 DocID024333 Rev2 1/12 This is information on a product in full production. www.st.com 12
Basic application SPT02-236DDB 1 Basic application Figure 3. STP02 configuration Sensor Process control Detector VCC P.supply LS D2 D1 GND HS Load Load Detector LS D2 VCC D1 HS GND P.supply Sensor Process control 2/12 DocID024333 Rev2
SPT02-236DDB Characteristics 2 Characteristics Table 1. Pinout connections(1) Symbol Description K D1 power bus protection diode cathode and D2 reverse blocking protection cathode A1 D1 power bus protection diode anode A2 D2 reverse blocking protection anode 1. See Figure1 Table 2. Absolute ratings (T = 25 °C) amb Symbol Diode Parameter Value Unit ESD protection, IEC 61000-4-2, per diode, in air (1) 30 kV V All PP ESD protection, IEC 61000-4-2, per diode, in contact (1) 30 kV Peak Surge Voltage, IEC 61000-4-5, per diode, V All 1 kV PP R = 500 Ω, (1) CC Peak pulse current, T = T = 85 °C, P All J amb 1400 W PP t = 8/20 µs P Peak pulse power dissipation, T = T = 85 °C, I All J amb 25 A PP t = 8/20 µs P I All Maximum forward surge current, t = 10 ms square 3 A FSM P Maximum repetitive avalanche energy EAR D1 L= 1 H, IRAS= 0.3A, RS = 100 Ω, VCC = 30 V, 66 mJ T = 85 °C, (1) amb T All Storage junction temperature range - 40 to 150 °C J 1. See system oriented test circuits in Figure5 (ESD) and Figure4 (Surge as also described in IEC 60947-5-2). Table 3. Recommended operating conditions Symbol Parameter Value Unit Operating power bus supply voltage -30 to 35 V V CC Pulse repetitive voltage t = 0.5 s, R = 500 Ω -30 to 37 V P CC I D2 forward peak current T = 150 °C duty cycle = 50% 300 mA F j T Operating ambient temperature range -40 to 100 °C amb T Operating junction temperature range(1) -40 to 150 °C J 1. Extended from DC operating at 150 °C up to peak repetitive value during the inductive load demagnetization DocID024333 Rev2 3/12
Characteristics SPT02-236DDB Table 4. Thermal resistance Symbol Parameter Value Unit SMD thermal resistance junction to ambient, per diode Rth(j-a) 230 °C/W FR4 board, copper thickness = 35 µm, recommended footprint SMD thermal transient impedance junction to ambient, per diode Zth(j-a) 6.5 °C/W t = 15 ms, T = 85 °C, recommended footprint p amb Table 5. Electrical characteristics (T = 25 °C, unless otherwise specified) J Symbol Diode Name Test conditions Value Unit I = 200 nA MIN 33 R V ALL Reverse stand off voltage V RM I = 1 µA MIN 36 R V = 36 V(1) MAX 1 µA RM I ALL Leakage reverse current RM VRM = 36 V, MAX 5 µA T = 150 °C J MIN 38 V V ALL Reverse breakdown voltage I = 1 mA BR R TYP 41.4 V MAX 46 V I = 2 A, V ALL Peak clamping voltage PP CL t = 8 /20 µs P TYP 44 V R ALL 8/20µs dynamic resistance TYP 0.5 Ω D αT ALL V Temperature sensitivity(2) MAX 17 10-4 /°C BR I = 0.3 A, L = 1 H, V D1 Peak clamping voltage R MAX 46 V CL V = 30 V CC V D2 Forward drop voltage I = 300 mA MAX 1.1 V F F 1. Voltage applied at the nodes of each diode 2. V @ T = V @25 °C x (1+ αT x (T - 25)) BR J BR J 4/12 DocID024333 Rev2
SPT02-236DDB System related electromagnetic compatibility ratings 3 System related electromagnetic compatibility ratings Figure 4. Surge Voltage test circuit according to IEC 61000-4-5 with 500 Ω serial resistor C= 18µF R= 2Ω High voltage surge generator Diode under test PE Figure 5. ESD test circuit according to IE 61000-4-2 R= 300Ω ESD voltage Diode source under test C= 150pF ESD generator Figure 6. EOS test circuit according to IE 61000-4-5 Sensor C= 18µF R= 2Ω Detector LS D2 High voltage surge generator D1 HS PE 4 Evaluation of the clamping voltage V (T ) = V (25) x (1+ αT (T – 25)) BR J BR J V (8/20 µs) = V + R x I CL MAX BR MAX D PP DocID024333 Rev2 5/12
Application considerations SPT02-236DDB 5 Application considerations 5.1 Demagnetization of an inductive load driven by the switch protection diode. The turn off energy EOFF that could be dissipated in the D1 diode is calculated as shown in AN587 and AN1351 application notes: E = V x L / / (R )² x [V + (V - V ) x ln (V / (V - V ))] OFF BR S CC CC BR BR BR CC t = L x ln (V / (V - V )) / R OFF BR BR CC S P = E / t OFF OFF OFF With L = 1 H; I = 0.3 A; V = 39 V; V = 30 V, R = 100 Ω the stress withstood by D BR CC S 1 becomes: E = 65 mJ; t = 15 ms; P = 4.3 W OFF OFF OFF In a single pulse mode operation, the junction temperature can be fairly estimated: T = T + [Z (t ) x P ] J amb TH OFF OFF In a repetitive operation with an F repetitive rate, P = E x F AV OFF T = T + P x R J_AV amb AV TH_JA And during the demagnetization t , T < T + P x Z (t ) OFF J_PK J_AV OFF TH OFF Z is the transient thermal impedance of each diode for a pulse having a duration TH t . OFF Figure 7. Electrical diagram for inductive load demagnetization DD2 VVV BBBRRR SSSwwwiiitttccchhh DDD111 VVV CCCCCC RR SS LLLoooaaaddd LL 5.2 Life time considerations Life time of the product is calculated to exceed 10 years. The key parameters to consider are the ambient temperature (T < 100 °C), the power supply voltage amb (V < 30 V), and the current in the reverse blocking diode (I = 0.1 A switching at CC F 0.5Hz with 50% duty cycle, the stand-by current being less than 1.5 mA). For higher current or higher switching frequency operation, the life time should be calculated considering the peak and average junction temperature. 6/12 DocID024333 Rev2
SPT02-236DDB Package information 6 Package information • Epoxy meets UL94,V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 8. µQFN-2L dimensions (definitions) D2 b L E2 e A A1 D E Table 6. µQFN-2L dimensions (values) Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.70 0.75 0.80 0.027 0.029 0.031 A1 0.00 0.02 0.05 0.00 0.001 0.002 b 0.25 0.30 0.35 0.010 0.011 0.014 D - 3.30 - - 0.13 - D2 1.85 2.00 2.10 0.073 0.079 0.082 E - 1.50 - - 0.06 - E2 0.90 1.05 1.16 0.035 0.041 0.046 e - 2.8 - - 0.110 - L 0.97 1.07 1.18 0.038 0.042 0.046 DocID024333 Rev2 7/12
Package information SPT02-236DDB Figure 9. Footprint (dimensions in mm) 2.00 0.50 0.50 1.07 1.05 0.25 8/12 DocID024333 Rev2
SPT02-236DDB Recommendation on PCB assembly 7 Recommendation on PCB assembly 7.1 Stencil opening design 1. General recommendation on stencil opening design a) Stencil opening dimensions: L (Length), W (Width), T (Thickness). Figure 10. Stencil opening dimensions L T W b) General design rule Stencil thickness (T) = 75 ~ 125 µm W Aspect Ratio = -----≥1,5 T L×W Aspect Area = ----------------------------≥0,66 2T(L+W) 2. Reference design a) Stencil opening thickness: 100 µm b) Stencil opening for central exposed pad: Opening to footprint ratio is 50%. c) Stencil opening for leads: Opening to footprint ratio is 90%. 7.2 Solder paste 1. Halide-free flux qualification ROL0 according to ANSI/J-STD-004. 2. “No clean” solder paste is recommended. 3. Offers a high tack force to resist component movement during high speed. 4. Solder paste with fine particles: powder particle size is 20-45 µm. DocID024333 Rev2 9/12
Recommendation on PCB assembly SPT02-236DDB 7.3 Placement 1. Manual positioning is not recommended. 2. It is recommended to use the lead recognition capabilities of the placement system, not the outline centering. 3. Standard tolerance of ± 0.05 mm is recommended. 4. 3.5 N placement force is recommended. Too much placement force can lead to squeezed out solder paste and cause solder joints to short. Too low placement force can lead to insufficient contact between package and solder paste that could cause open solder joints or badly centered packages. 5. To improve the package placement accuracy, a bottom side optical control should be performed with a high resolution tool. 6. For assembly, a perfect supporting of the PCB (all the more on flexible PCB) is recommended during solder paste printing, pick and place and reflow soldering by using optimized tools. 7.4 PCB design preference 1. To control the solder paste amount, the closed via is recommended instead of open vias. 2. The position of tracks and open vias in the solder area should be well balanced. The symmetrical layout is recommended, in case any tilt phenomena caused by asymmetrical solder paste amount due to the solder flow away. 7.5 Reflow profile Figure 11. ST ECOPACK® recommended soldering reflow profile for PCB mounting 240-245 °C Temperature (°C) -2°C/s 250 2 - 3 °C/s 200 60sec (90max) -3°C/s 150 -6°C/s 100 0.9 °C/s 50 Time (s) 0 30 60 90 120 150 180 210 240 270 300 Note: Minimize air convection currents in the reflow oven to avoid component movement. Compliant with J-STD-020D soldering profile 10/12 DocID024333 Rev2
SPT02-236DDB Ordering information 8 Ordering information Figure 12. Ordering information scheme SPT 02 - 2 36 DDB Sensor protection termination Generation 02 = 2ndegénération Channels number 2 = 2 channels Stand-off voltage 36 = 36 V Package D = Dual D = 3 x 2 mm package size B = 3 pins Table 7. Ordering information Order code Marking Package Weight Packing µQFN-2L with SPT02-236DDB S2 15.55 mg Tape and reel exposed pad 9 Revision history Table 8. Document revision history Date Revision Changes 06-May-2013 1 First issue 21-Mar-2014 2 Updated Table2, Table6 and Figure9. DocID024333 Rev2 11/12
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