SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor V 650 V DS Feature R 0.19 Ω DS(on) • New revolutionary high voltage technology I 20.7 A D • Worldwide best R in TO 220 DS(on) • Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 3 2 1 • High peak current capability P-TO220-3-31 • Improved transconductance Type Package Ordering Code Marking SPP20N65C3 PG-TO220 Q67040-S4556 20N65C3 SPA20N65C3 PG-TO220FP SP000216362 20N65C3 SPI20N65C3 PG-TO262 Q67040-S4560 20N65C3 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current I A D T = 25 °C 20.7 20.71) C T = 100 °C 13.1 13.11) C Pulsed drain current, t limited by T I 62.1 62.1 A p jmax Dpuls Avalanche energy, single pulse E 690 690 mJ AS I =3.5A,V =50V D DD Avalanche energy, repetitive t limited by T 2) E 1 1 AR jmax AR I =7A,V =50V D DD Avalanche current, repetitive t limited by T I 7 7 A AR jmax AR Gate source voltage V ±20 ±20 V GS Gate source voltage AC (f >1Hz) V ±30 ±30 GS Power dissipation, TC = 25°C Ptot 208 34.5 W Operating and storage temperature T ,T -55...+150 °C j stg Rev. 3.0 Page 1 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 20.7 A, T = 125 °C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R - - 0.6 K/W thJC Thermal resistance, junction - case, FullPAK R - - 3.6 thJC_FP Thermal resistance, junction - ambient, leaded R - - 62 thJA Thermal resistance, junction - ambient, FullPAK R - - 80 thJA_FP SMD version, device on PCB: R thJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - Soldering temperature, wavesoldering T - - 260 °C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T=25°C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=0.25mA 650 - - V Drain-Source avalanche V V =0V,I =7A - 730 - (BR)DS GS D breakdown voltage Gate threshold voltage VGS(th) ID=1000µA,VGS=VDS 2.1 3 3.9 Zero gate voltage drain current I V =600V,V =0V, µA DSS DS GS T=25°C - 0.1 1 j T=150°C - - 100 j Gate-source leakage current I V =20V,V =0V - - 100 nA GSS GS DS Drain-source on-state resistance R V =10V,I =13.1A Ω DS(on) GS D T=25°C - 0.16 0.19 j T=150°C - 0.43 - j Gate input resistance RG f=1MHz, open drain - 0.54 - Rev. 3.0 Page 2 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, - 17.5 - S I =13.1A D Input capacitance Ciss VGS=0V,VDS=25V, - 2400 - pF Output capacitance C f=1MHz - 780 - oss Reverse transfer capacitance C - 50 - rss Effective output capacitance,4) C V =0V, - 83 - o(er) GS energy related V =0V to 480V DS Effective output capacitance,5) C - 160 - o(tr) time related Turn-on delay time td(on) VDD=380V,VGS=0/13V, - 10 - ns I =20.7A, D R =3.6Ω,T=125 G j Rise time tr VDD=380V,VGS=0/13V, - 5 - Turn-off delay time t I =20.7A, - 67 100 d(off) D Fall time t R =3.6Ω - 4.5 12 f G Gate Charge Characteristics Gate to source charge Qgs VDD=480V,ID=20.7A - 11 - nC Gate to drain charge Q - 33 - gd Gate charge total Q V =480V,I =20.7A, - 87 114 g DD D V =0 to 10V GS Gate plateau voltage V V =480V,I =20.7A - 5.5 - V (plateau) DD D 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . o(tr) oss DS DSS Rev. 3.0 Page 3 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous IS TC=25°C - - 20.7 A forward current Inverse diode direct current, I - - 62.1 SM pulsed Inverse diode forward voltage V V =0V,I =I - 1 1.2 V SD GS F S Reverse recovery time trr VR=480V,IF=IS , - 500 800 ns Reverse recovery charge Qrr diF/dt=100A/µs - 11 - µC Peak reverse recovery current I - 70 - A rrm Peak rate of fall of reverse dirr/dt Tj=25°C - 1400 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_I SPA SPP_I SPA R 0.00769 0.00769 K/W C 0.0003763 0.0003763 Ws/K th1 th1 R 0.015 0.015 C 0.001411 0.001411 th2 th2 R 0.029 0.029 C 0.001931 0.001931 th3 th3 R 0.114 0.163 C 0.005297 0.005297 th4 th4 R 0.136 0.323 C 0.012 0.008453 th5 th5 R 0.059 2.526 C 0.091 0.412 th6 th6 External Heatsink Tj Rth1 Rth,n Tcase P (t) tot Cth1 Cth2 Cth,n T amb Rev. 3.0 Page 4 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 1 Power dissipation 2 Power dissipation FullPAK P = f (T ) P = f (T ) tot C tot C SPP20N65C3 240 35 W W 200 180 25 ot 160 ot Pt Pt 140 20 120 15 100 80 10 60 40 5 20 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC 3 Safe operating area 4 Safe operating area FullPAK I = f ( V ) I = f (V ) D DS D DS parameter : D = 0 , T =25°C parameter: D = 0, T = 25°C C C 102 102 A A 101 101 D D I I 100 100 tp = 0.001 ms tp = 0.001 ms tp = 0.01 ms tp = 0.01 ms tp = 0.1 ms tp = 0.1 ms tp = 1 ms 10-1 tp = 1 ms 10-1 tp = 10 ms DC DC 10-2 10-2 100 101 102 V 103 100 101 102 V 103 V V DS DS Rev. 3.0 Page 5 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 5 Transient thermal impedance FullPAK 6 Typ. output characteristic Z = f (t ) I = f (V ); T=25°C thJC p D DS j parameter: D = t /t parameter: t = 10 µs, V p p GS 101 80 K/W 20V A 10V 8V 100 60 7V C J h Zt ID 50 6,5V 10-1 D = 0.5 40 D = 0.2 6V D = 0.1 D = 0.05 30 D = 0.02 D = 0.01 5,5V 10-2 single pulse 20 5V 10 4,5V 10-310-6 10-5 10-4 10-3 10-2 10-1 s 101 00 5 10 15 V 25 t V p DS 7 Typ. output characteristic 8 Typ. drain-source on resistance I = f (V ); T=150°C R =f(I ) D DS j DS(on) D parameter: t = 10 µs, V parameter: T=150°C, V p GS j GS 45 1.5 Ω A 20V 10V 7V 1.3 35 6V 1.2 n) o 30 S( 1.1 D 4V D R I 4.5V 5.5V 1 25 5V 5.5V 0.9 6V 20 0.8 6.5V 5V 20V 15 0.7 0.6 10 4.5V 0.5 5 0.4 0 0.3 0 2 4 6 8 10 12 14 16 18 20 22 V 25 0 5 10 15 20 25 30 A 40 VDS ID Rev. 3.0 Page 6 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 9 Drain-source on-state resistance 10 Typ. transfer characteristics R = f (T) I = f ( V ); V ≥ 2 x I x R DS(on) j D GS DS D DS(on)max parameter : I = 13.1 A, V = 10 V parameter: t = 10 µs D GS p SPP20N65C3 1.1 80 Ω A 0.9 25°C 60 n) 0.8 o S( RD 0.7 ID 50 0.6 40 0.5 150°C 0.4 30 0.3 20 98% 0.2 typ 10 0.1 0 0 -60 -20 20 60 100 °C 180 0 1 2 3 4 5 6 7 V 9 T V j GS 11 Typ. gate charge 12 Forward characteristics of body diode V = f (Q ) I = f (V ) GS Gate F SD parameter: ID = 20.7 A pulsed parameter: Tj , tp= 10 µs 16 SPP20N65C3 102 SPP20N65C3 V A 12 S 0,2V 101 G DS max V 10 0,8VDS max F I 8 6 100 T = 25 °C typ j 4 T = 150 °C typ j T = 25 °C (98%) j 2 T = 150 °C (98%) j 0 10-1 0 20 40 60 80 100 nC 140 0 0.4 0.8 1.2 1.6 2 2.4 V 3 Q V Gate SD Rev. 3.0 Page 7 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 13 Typ. switching time 14 Typ. switching time t = f (I ), inductive load, T=125°C t = f (R ), inductive load, T=125°C D j G j par.: V =380V, V =0/+13V, R =3.6Ω par.: V =380V, V =0/+13V, I =20.7 A DS GS G DS GS D 102 103 td(off) ns td(off) ns 102 t t td(on) td(on) 101 tf 101 tr tr tf 100 100 0 4 8 12 16 A 24 0 5 10 15 20 25 30 Ω 40 ID RG 15 Typ. drain current slope 16 Typ. drain source voltage slope di/dt = f(R ), inductive load, T = 125°C dv/dt = f(R ), inductive load, T = 125°C G j G j par.: V =380V, V =0/+13V, I =20.7A par.: V =380V, V =0/+13V, I =20.7A DS GS D DS GS D 5000 150 A/µs V/ns dv/dt(off) 4000 3500 di/dt 3000 dv/dt 100 di/dt(on) 2500 75 2000 50 dv/dt(on) 1500 1000 di/dt(off) 25 500 0 0 0 5 10 15 20 25 30 Ω 40 0 5 10 15 20 25 30 Ω 40 R R G G Rev. 3.0 Page 8 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 17 Typ. switching losses 18 Typ. switching losses E = f (I ), inductive load, T=125°C E = f(R ), inductive load, T=125°C D j G j par.: V =380V, V =0/+13V, R =3.6Ω par.: V =380V, V =0/+13V,I =11A DS GS G DS GS D 0.08 0.4 *) Eon includes SPD06S60 diode *) Eon includes SPD06S60 diode commutation losses commutation losses mWs mWs 0.06 0.3 Eoff 0.05 0.25 E E Eoff 0.04 0.2 Eon* 0.03 0.15 Eon* 0.02 0.1 0.01 0.05 0 0 0 3 6 9 12 15 A 21 0 5 10 15 20 25 30 Ω 40 ID RG 19 Avalanche SOA 20 Avalanche energy I = f (t ) E = f (T) AR AR AS j par.: T ≤ 150 °C par.: I = 3.5 A, V = 50 V j D DD 7 700 A mJ 6 5.5 5 500 S IAR 4.5 Tj(Start)=25°C EA 4 400 3.5 3 300 2.5 Tj(Start)=125°C 2 200 1.5 1 100 0.5 010-3 10-2 10-1 100 101 102 µs 104 020 40 60 80 100 120 °C 160 tAR Tj Rev. 3.0 Page 9 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 21 Drain-source breakdown voltage 22 Avalanche power losses V = f (T) P = f (f ) (BR)DSS j AR parameter: E =1mJ AR SPP20N65C3 785 500 V W 745 400 S S D R) 725 R 350 B A V( 705 P 300 685 250 665 200 645 150 625 100 605 50 585-60 -20 20 60 100 °C 180 0104 105 Hz 106 Tj f 23 Typ. capacitances 24 Typ. C stored energy oss C = f (V ) E =f(V ) DS oss DS parameter: V =0V, f=1 MHz GS 105 14 pF µJ 12 104 Ciss 11 10 s s o 9 C 103 E 8 7 Coss 102 6 5 4 Crss 101 3 2 1 100 0 0 100 200 300 400 V 600 0 100 200 300 400 V 600 V V DS DS Rev. 3.0 Page 10 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 Definition of diodes switching characteristics Rev. 3.0 Page 11 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 3.0 Page 12 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 3.0 Page 13 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.0 Page 14 2007-08-30

SPP20N65C3, SPA20N65C3 SPI20N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.0 Page 15 2007-08-30

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