SN7002N (cid:210) SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V • N-Channel DS R 5 W • Enhancement mode DS(on) I 0.2 A • Logic Level D • dv/dt rated PG-SOT-23 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 Source pin 2 Type Package Pb-free Tape and Reel Information Marking SN7002N PG-SOT-23 Yes L6327: 3000 pcs/reel sSN SN7002N PG-SOT-23 Yes L6433: 10000 pcs/reel sSN Maximum Ratings, at T = 25 °C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D TA=25°C 0.2 TA=70°C 0.16 Pulsed drain current I 0.8 D puls TA=25°C Reverse diode dv/dt dv/dt 6 kV/µs IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C Gate source voltage V ±20 V GS ESD Class (JESD22-A114-HBM) 0 (<250V) Power dissipation P 0.36 W tot TA=25°C Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Rev. 2.5 Page 1 2009-14-08

SN7002N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient R - - 350 K/W thJA at minimal footprint Electrical Characteristics, at T = 25 °C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V 60 - - V (BR)DSS V =0, I =250µA GS D Gate threshold voltage, V = V V 0.8 1.4 1.8 GS DS GS(th) I =26µA D Zero gate voltage drain current I µA DSS V =60V, V =0, T=25°C - - 0.1 DS GS j V =60V, V =0, T=150°C - - 5 DS GS j Gate-source leakage current I - - 10 nA GSS V =20V, V =0 GS DS Drain-source on-state resistance R - 3.9 7.5 W DS(on) V =4.5V, I =0.17A GS D Drain-source on-state resistance R - 2.5 5 DS(on) V =10V, I =0.5A GS D Rev. 2.5 Page 2 2009-14-08

SN7002N Electrical Characteristics, at T = 25 °C, unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g V ‡ 2*I *R , 0.09 0.17 - S fs DS D DS(on)max I =0.16A D Input capacitance C V =0, V =25V, - 34 45 pF iss GS DS Output capacitance C f=1MHz - 7.2 9.6 oss Reverse transfer capacitance C - 2.8 4.2 rss Turn-on delay time t V =30V, V =10V, - 2.4 3.6 ns d(on) DD GS Rise time t I =0.5A, R =6W - 3.2 4.8 r D G Turn-off delay time t - 5.3 8 d(off) Fall time t - 3.6 5.4 f Gate Charge Characteristics Gate to source charge Q V =48V, I =0.5A - 0.14 0.21 nC gs DD D Gate to drain charge Q - 0.42 0.63 gd Gate charge total Q V =48V, I =0.5A, - 1 1.5 g DD D V =0 to 10V GS Gate plateau voltage V V =48V, I = 0.5 A - 4.5 - V (plateau) DD D Reverse Diode Inverse diode continuous I T =25°C - - 0.2 A S A forward current Inv. diode direct current, pulsedI - - 0.8 SM Inverse diode forward voltage V V =0, I = I - 0.83 1.2 V SD GS F S Reverse recovery time t V =30V, I =l , - 14.2 21.3 ns rr R F S Reverse recovery charge Q di /dt=100A/µs - 5.9 8.8 nC rr F Rev. 2.5 Page 3 2009-14-08

SN7002N 1 Power dissipation 2 Drain current P = f (T ) I = f (T ) tot A D A parameter: V ‡ 10 V GS SN7002N SN7002N 0.38 0.22 W A 0.32 0.18 0.28 0.16 Ptot 0.24 D 0.14 I 0.12 0.2 0.1 0.16 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 T T A A 3 Safe operating area 4 Transient thermal impedance I = f ( V ) Z = f (t ) D DS thJA p parameter : D = 0 , T = 25 °C parameter : D = t /T A p 10 1 SN7002N 10 3 SN7002N K/W A 10 2 10 0 tp = 2 0 0 .0 µ s ID R D S ( o n) = V D S / I D 1 ms ZthJA 10 1 10 -1 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 10 -2 0.02 DC 10 -2 0.01 single pulse 10 -3 10 -3 10 0 10 1 V 10 2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 V t DS p Rev. 2.5 Page 4 2009-14-08

SN7002N 5 Typ. output characteristic 6 Typ. drain-source on resistance I = f (V ) R = f (I ) D DS DS(on) D parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 1 7.5 3.1V 10V W 3.5V A 7V 3.7V 6V 4.1V 5V 6 4.5V 0.75 4.5V n) 5V 4.0V (o 5.25 6V 3.7V DS 7V D0.625 3.5V R 10V I 4.5 3.0V 0.5 3.75 3 0.375 2.25 0.25 1.5 0.125 0.75 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1 V I DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I = f ( V ); V ‡ 2 x I x R g = f(I ) D GS DS D DS(on)max fs D parameter: Tj = 25 °C parameter: Tj = 25 °C 1 0.4 A S 0.8 0.3 0.7 D s 0.25 I 0.6 gf 0.5 0.2 0.4 0.15 0.3 0.1 0.2 0.05 0.1 0 0 0 0.8 1.6 2.4 3.2 4 4.8 V 6 0 0.2 0.4 0.6 0.8 A 1.1 V I GS D Rev. 2.5 Page 5 2009-14-08

SN7002N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R = f (T) V = f (T) DS(on) j GS(th) j parameter : ID = 0.5 A, VGS = 10 V parameter: VGS = VDS; ID =26µA SN7002N 15 2.2 W V 98% 1.8 12 on) 11 h) 1.6 RDS( 10 GS(t 1.4 typ. 9 V 1.2 8 7 1 6 98% 2% 0.8 5 4 0.6 3 typ 0.4 2 0.2 1 0 0 -60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V ) I = f (V ) DS F SD parameter: VGS=0, f=1 MHz, Tj = 25 °C parameter: Tj 10 2 10 0 SN7002N A Ciss pF 10 -1 F I C 10 1 Coss 10 -2 Crss T = 25 °C typ j T = 150 °C typ j T = 25 °C (98%) j T = 150 °C (98%) j 10 0 10 -3 0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V V DS SD Rev. 2.5 Page 6 2009-14-08

SN7002N 13 Typ. gate charge 14 Drain-source breakdown voltage V = f (Q ); parameter: V , V = f (T) GS G DS (BR)DSS j I = 0.2 A pulsed, T = 25 °C D j SN7002N SN7002N 16 72 V V S 68 12 S D GS BR) 66 V 10 0.2 VDS max V( 0.5 VDS max 64 8 0.8 V DS max 62 6 60 4 58 2 56 0 54 0 0.4 0.8 1.2 1.6 2 nC 2.8 -60 -20 20 60 100 °C 180 Q T G j Rev. 2.5 Page 7 2009-14-08

SN7002N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.5 page 8 2009-14-08

SN7002N Published by Infineon Technologies AG 8 1 7 26 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.5 page 9 2009-14-08