SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 DUAL MULTIPLEXED LVDS REPEATERS FEATURES SN65LVDS22D and SN65LVDS22PW (Marked as LVDS22) • MeetsorExceedstheRequirementsofANSI SN65LVDM22D and SN65LVDM22PW (Marked as LVDM22) (TOP VIEW) TIA/EIA-644-1995Standard • DesignedforClockRatesupto200MHz 1B 1 16 VCC (400Mbps) 1A 2 15 VCC • DesignedforDataRatesupto250Mbps S0 3 14 1Y 1DE 4 13 1Z • PinCompatibleWithSN65LVDS122and S1 5 12 2DE SN65LVDT122,1.5Gbps2x2Crosspoint 2A 6 11 2Z SwitchFromTI 2B 7 10 2Y • ESDProtectionExceeds12kVonBusPins GND 8 9 GND • OperatesFromaSingle3.3-VSupply • Low-VoltageDifferentialSignalingWith logic diagram (positive logic) OutputVoltagesof350mVInto: – 100-W Load(SN65LVDS22) 2 – 50-W Load(SN65LVDM22) 1A + • PropagationDelayTime;4nsTyp 1B 1 _ 0 1143 1Y 1Z • PowerDissipationat400Mbpsof150mW 1 • BusPinsAreHighImpedanceWhenDisabled 4 1DE orWithVCCLessThan1.5V 12 2DE • LVTTLLevelsAre5VTolerant 3 S0 • Open-CircuitFailSafeReceiver 5 DESCRIPTION S1 The SN65LVDS22 and SN65LVDM22 are differential 0 10 2Y line drivers and receivers that use low-voltage 2A 6 + 11 2Z differential signaling (LVDS) to achieve signaling 7 _ 1 2B rates as high as 400 Mbps. The receiver outputs can be switched to either or both drivers through the multiplexer control signals S0 and S1. This allows the MUX TRUTH TABLE flexibility to perform splitter or signal routing functions INPUT OUTPUT withasingledevice. FUNCTION S1 S0 1Y/1Z 2Y/2Z The TIA/EIA-644 standard compliant electrical 0 0 1A/1B 1A/1B Splitter interface provides a minimum differential output 0 1 2A/2B 2A/2B Splitter voltage magnitude of 247 mV into a 100-W load and 1 0 1A/1B 2A/2B Router receipt of 100 mV signals with up to 1 V of ground 1 1 2A/2B 1A/1B Router potential difference between a transmitter and receiver. The SN65LVDM22 doubles the output drive currenttoachieveLVDSlevelswitha50-W load. Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©1998–2002,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 The intended application of these devices and signaling technique is for both point-to-point baseband (single termination) and multipoint (double termination) data transmissions over controlled impedance media. The transmission media may be printed-circuit board traces, backplanes, or cables. (Note: The ultimate rate and distanceofdatatransferisdependentupontheattenuationcharacteristicsofthemedia, the noise coupling to the environment,andotherapplicationspecificcharacteristics). TheSN65LVDS22andSN65LVDM22arecharacterizedforoperationfrom–40°Cto85°C. 2 SubmitDocumentationFeedback

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS VCC VCC 300 kW 50 W S0, S1 Input 50 W 1DE, 2DE 7 V Input 300 kW 7 V VCC VCC 300 kW 300 kW 5 W Y or Z 10 kW Output A Input B Input 7 V 7 V 7 V ABSOLUTE MAXIMUM RATINGS overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1) UNIT Supplyvoltagerange,V (seeNote (2)) –0.5Vto4V CC (DE,S0,S1) –0.5Vto6V Voltagerange (Y,Z,A,andB) –0.5Vto4V A,B,Y,ZandGND(seeNote (3)) Class3,A:12kV,B:600V Electrostaticdischarge Allpins Class3,A:5kV,B:500V Continuouspowerdissipation SeeDissipationRatingTable Storagetemperaturerange –65°Cto150°C Leadtemperature1,6mm(1/16inch)fromcasefor10seconds 260°C (1) Stressesbeyondthoselistedunderabsolutemaximumratingsmaycausepermanentdamagetothedevice.Thesearestressratings only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperating conditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. (2) Allvoltagevalues,exceptdifferentialI/Obusvoltages,arewithrespecttonetworkgroundterminal. (3) TestedinaccordancewithMIL-STD-883CMethod3015.7. SubmitDocumentationFeedback 3

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 DISSIPATION RATING TABLE T £ 25°C DERATINGFACTOR(1) T =85°C PACKAGE A A POWERRATING ABOVET =25°C POWERRATING A D 1110mW 8.9mW/°C 577mW PW 839mW 6.7mW/°C 437mW (1) Thisistheinverseofthejunction-to-ambientthermalresistancewhenboard-mountedandwithnoair flow. RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT V Supplyvoltage 3 3.3 3.6 V CC V High-levelinputvoltage S0,S1,1DE,2DE 2 V IH V Low-levelinputvoltage S0,S1,1DE,2DE 0.8 V IL |V | Magnitudeofdifferentialinputvoltage 0.1 0.6 V ID (cid:1) (cid:1) (cid:1) (cid:1) V V V V Common-modeinputvoltage(seeFigure1) ID 2.4– ID IC 2 2 V –0.8 V CC T Operatingfree-airtemperature 40 85 °C A TIMING REQUIREMENTS PARAMETER MIN NOM MAX UNIT t Inputtoselectsetuptime 1.6 ns su t Inputtoselectholdtime SeeFigure6 1 ns h t Selecttoswitchoutput 3.2 5 ns switch COMMON-MODE INPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE 2.5 MAX at VCC > 3.15 V V ge – 2 MAX at VCC = 3 V a olt V ut p 1.5 n e I d o M n- 1 o m m o C – C 0.5 VI Min 0 0 0.1 0.2 0.3 0.4 0.5 0.6 VID – Differential Input Voltage – V Figure1.Common-ModeInputVoltagevsDifferentialInputVoltage 4 SubmitDocumentationFeedback

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 RECEIVER ELECTRICAL CHARACTERISTICS overrecommendedoperatingconditions(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP MAX UNIT V Positive-goingdifferentialinputvoltagethreshold 100 mV IT+ V Negative-goingdifferentialinputvoltagethreshold 100 mV IT– V =0V 2 20 I I Inputcurrent(AorBinputs) µA I V =2.4V 1.2 I I I(OFF Power-offinputcurrent(AorBinputs) V =0V 20 µA CC ) RECEIVER/DRIVER ELECTRICAL CHARACTERISTICS overrecommendedoperatingconditions(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP(1) MAX UNIT V Differentialoutputvoltagemagnitude 247 340 454 mV OD D V Changeindifferentialoutputvoltagemagnitude SeeFigure2 –50 50 mV OD betweenlogicstates R =100W ('LVDS22), 1.37 VOC(SS) Steady-statecommon-modeoutputvoltage RL=50W ('LVDM22) 1.125 5 V L D V Changeinsteady-statecommon-modeoutput SeeFigure3 –50 3 50 mV OC(SS) voltagebetweenlogicstates V Peak-to-peakcommon-modeoutputvoltage 150 mV OC(PP) NoLoad 8 12 R =100W ('LVDS22) 13 20 L I Supplycurrent mA CC R =50W ('LVDM22) 21 27 L Disabled 3 6 DE –10 I High-levelinputcurrent V =5V µA IH IH S0,S1 20 DE –10 I Low-levelinputcurrent V =0.8V µA IL IL S0,S1 10 –10 V orV =0V,V =0V('LVDS22) OY OZ OD –10 I Short-circuitoutputcurrent mA OS –10 V orV =0V,V =0V('LVDM22) OY OZ OD –10 V =600mV 0.015 ±1 OD I High-impedanceoutputcurrent µA OZ V =0VorV 0.015 ±1 O CC I Power-offoutputcurrent V =0V, V =3.6V 0.015 ±1 µA O(OFF) CC O C Inputcapacitance 3 pF IN (1) Alltypicalvaluesareat25°Candwitha3.3-Vsupply. SubmitDocumentationFeedback 5

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 DIFFERENTIAL RECEIVER TO DRIVER SWITCHING CHARACTERISTICS overrecommendedoperatingconditions(unlessotherwisenoted) PARAMETER TESTCONDITIONS MIN TYP(1) MAX UNIT t Differentialpropagationdelaytime,low-to-high 4 6 ns PLH t Differentialpropagationdelaytime,high-to-low 4 6 ns PHL t Pulseskew(|t -t |) 0.2 ns sk(p) PHL PLH t Transitiontime,low-to-high SN65LVDS22 C =10pF,SeeFigure4 1 1.5 ns r L t Transitiontime,low-to-high SN65LVDM22 0.8 1.3 ns r t Transitiontime,high-to-low SN65LVDS22 1 1.5 ns f t Transitiontime,high-to-low SN65LVDM22 0.8 1.3 ns f t Propagationdelaytime,high-level-to-high-impedanceoutput 4 10 ns PHZ t Propagationdelaytime,low-level-to-high-impedanceoutput 5 10 ns PLZ SeeFigure5 t Propagationdelaytime,high-impedance-to-high-leveloutput 5 10 ns PZH t Propagationdelaytime,high-impedance-to-low-leveloutput 6 10 ns PZL t 0.2 PHL_R1_Dx t 0.2 PLH_R1_Dx Channel-to-channelskew,receivertodriver(2) ns t 0.2 PHL_R2_Dx t 0.2 PLH_R2_Dx f Maximumoperatingfrequency Allchannelsswitching 200 MHz max (1) Alltypicalvaluesareat25°Candwitha3.3-Vsupply. (2) Theseparametricvaluesaremeasuredoversupplyvoltageandtemperaturerangesrecommendedforthedevice. PARAMETER MEASUREMENT INFORMATION DE A Y Pulse Generator VOD RL (see Note B) Z B Input (see Note A) CL = 10 pF (2 Places) (see Note C) VI(B) 1.4 V 100% 80% VI(A) 1 V VOD 0 20% 0% tf tr A. All input pulses are supplied by a generator having the following characteristics: t or t £ 1 ns, pulse repetition rate r f (PRR)=50Mpps,pulsewidth=10±0.2ns. B. R =100W or50W ±1% L C. C includesinstrumentationandfixturecapacitancewithin6mmoftheD.U.T. L Figure2.TestCircuitandVoltageDefinitionsfortheDifferentialOutputSignal 6 SubmitDocumentationFeedback

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 PARAMETER MEASUREMENT INFORMATION (continued) DE RL (see Note B) (2 Places) VI(B) 1.4 V A Y Pulse VI(A) 1 V Generator B Input Z VOC(PP) (see Note A) VOC (see Note D) VOC(SS) CL = 10 pF (2 Places) (see Note C) VCC A. All input pulses are supplied by a generator having the following characteristics: t or t £ 1 ns, pulse repetition rate r f (PRR)=50Mpps,pulsewidth=10±0.2ns. B. R =100W or50W ±1% L C. C includesinstrumentationandfixturecapacitancewithin6mmoftheD.U.T. L D. ThemeasurementofV ismadeontestequipmentwitha-3dBbandwidthofatleast300MHz. OC(PP) Figure3.TestCircuitandDefinitionsfortheDriverCommon-ModeOutputVoltage DE A Y Pulse Generator R D RL (see Note A) B Z 10 pF 10 pF VIB 1.4 V 0-V Differential 1.2-V CM VIA 1 V tPLH tPHL VOZ 1.4 V 0-V Differential 1.2-V CM VOY 1 V 80% 0-V Differential 20% VOY – VOZ tr tf A. R =100W or50W ±1% L B. All input pulses are supplied by a generator having the following characteristics: pulse repetition rate (PRR) = 50 Mpps,pulsewidth=10±0.2ns. Figure4.DifferentialReceivertoDriverPropagationDelayandDriverTransitionTimeWaveforms SubmitDocumentationFeedback 7

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 PARAMETER MEASUREMENT INFORMATION (continued) DE RL/2 A (see Note A) 1 V or 1.4 V R D 1.2 V 1.2 V B RL/2 (see Note A) 2 V DE 1.4 V 0.8 V tPZH tPHZ ≈1.4 V VOY or VOZ 1.25 V 1.2 V tPZL tPLZ 1.2 V VOY or VOZ 1.15 V ≈1 V A. R =100W or50W ±1% L B. All input pulses are supplied by a generator having the following characteristics: pulse repetition rate (PRR) = 0.5 Mpps,pulsewidth=500±10ns. Figure5.EnableandDisableTimingCircuit 8 SubmitDocumentationFeedback

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 PARAMETER MEASUREMENT INFORMATION (continued) 1A/B 2A/B tsu th S0/1 Outputs Out 1 or 2 Out 1 or 2 tsu DE NOTE: tsu and th times specify that data must be in a stable state before and after MUX control switches. Figure6.Input-to-SelectforBothRisingandFallingEdgeSetupandHoldTimes SubmitDocumentationFeedback 9

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 TYPICAL CHARACTERISTICS SN65LVDS22 SN65LVDS22 HIGH-LEVELOUTPUTVOLTAGE LOW-LEVELOUTPUTVOLTAGE vs vs HIGH-LEVELOUTPUTCURRENT LOW-LEVELOUTPUTCURRENT 3.5 4 VCC = 3.3 V TA = 25°C VCC = 3.3 V V 3 − V TA = 25°C − e ge ag 3 olta 2.5 Volt ut V put pt 2 ut u O vel O 1.5 evel 2 e L h-L ow- g L Hi 1 − − L 1 H O O V V .5 0 0 −4 −3 −2 −1 0 0 2 4 6 IOH − High-Level Output Current − mA IOL − Low-Level Output Current − mA Figure7. Figure8. SN65LVDM22 SN65LVDM22 HIGH-LEVELOUTPUTVOLTAGE LOW-LEVELOUTPUTVOLTAGE vs vs HIGH-LEVELOUTPUTCURRENT LOW-LEVELOUTPUTCURRENT 3.5 4 VTAC C= =2 53°.C3 V VTAC C= =2 53°.C3 V 3 V V − − e e 3 g g a 2.5 a olt olt V V put 2 put ut ut O O 2 vel 1.5 vel e e L L h- w- Hig 1 Lo − − 1 H L O O V .5 V 0 0 −8 −6 −4 −2 0 0 2 4 6 8 10 12 IOH − High-Level Output Current − mA IOL − Low-Level Output Current − mA Figure9. Figure10. 10 SubmitDocumentationFeedback

SN65LVDS22 SN65LVDM22 www.ti.com SLLS315C–DECEMBER1998–REVISEDJUNE2002 APPLICATION INFORMATION FAIL SAFE One of the most common problems with differential signaling applications is how the system responds when no differential voltage is present on the signal pair. The LVDS receiver is like most differential line receivers, in that its output logic state can be indeterminate when the differential input voltage is between –100 mV and 100mV and within its recommended input common-mode voltage range. However, TI's LVDS receiver is different in how ithandlestheopen-inputcircuitsituation. Open-circuit means that there is little or no input current to the receiver from the data line itself. This could be when the driver is in a high-impedance state or the cable is disconnected. When this occurs, the LVDS receiver pulls each line of the signal pair to near V through 300-kW resistors as shown in Figure 11. The fail-safe CC feature uses an AND gate with input voltage thresholds at about 2.3 V to detect this condition and force the outputtoahigh-levelregardlessofthedifferentialinputvoltage. VCC 300 kW 300 kW A Rt = 100 W (Typ) Y B VIT ≈ 2.3 V Figure11.Open-CircuitFailSafeoftheLVDSReceiver It is only under these conditions that the output of the receiver is valid with less than a 100 mV differential input voltagemagnitude.Thepresenceoftheterminationresistor,Rt,does not affect the fail-safe function as long as it isconnected as shown in Figure 11. Other termination circuits may allow a dc current to ground that could defeat thepullupcurrentsfromthereceiverandthefail-safefeature. SubmitDocumentationFeedback 11

PACKAGE OPTION ADDENDUM www.ti.com 26-Aug-2009 PACKAGING INFORMATION OrderableDevice Status(1) Package Package Pins Package EcoPlan(2) Lead/BallFinish MSLPeakTemp(3) Type Drawing Qty SN65LVDM22D ACTIVE SOIC D 16 40 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDM22DG4 ACTIVE SOIC D 16 40 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDM22PW ACTIVE TSSOP PW 16 90 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDM22PWG4 ACTIVE TSSOP PW 16 90 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22D ACTIVE SOIC D 16 40 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22DG4 ACTIVE SOIC D 16 40 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22DR ACTIVE SOIC D 16 2500 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22DRG4 ACTIVE SOIC D 16 2500 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22PW ACTIVE TSSOP PW 16 90 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22PWG4 ACTIVE TSSOP PW 16 90 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22PWR ACTIVE TSSOP PW 16 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) SN65LVDS22PWRG4 ACTIVE TSSOP PW 16 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM noSb/Br) (1)Themarketingstatusvaluesaredefinedasfollows: ACTIVE:Productdevicerecommendedfornewdesigns. LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect. NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartin anewdesign. PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable. OBSOLETE:TIhasdiscontinuedtheproductionofthedevice. (2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheck http://www.ti.com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails. TBD:ThePb-Free/Greenconversionplanhasnotbeendefined. Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirements forall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesoldered athightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses. Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieand package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible)asdefinedabove. Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflame retardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimited informationmaynotbeavailableforrelease. Addendum-Page1

PACKAGE OPTION ADDENDUM www.ti.com 26-Aug-2009 InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTI toCustomeronanannualbasis. Addendum-Page2

PACKAGE MATERIALS INFORMATION www.ti.com 25-Sep-2009 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) SN65LVDS22DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 SN65LVDS22PWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 25-Sep-2009 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) SN65LVDS22DR SOIC D 16 2500 346.0 346.0 33.0 SN65LVDS22PWR TSSOP PW 16 2000 346.0 346.0 29.0 PackMaterials-Page2

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