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  • 型号: SMLVT3V3
  • 制造商: STMicroelectronics
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SMLVT3V3产品简介:

ICGOO电子元器件商城为您提供SMLVT3V3由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SMLVT3V3价格参考。STMicroelectronicsSMLVT3V3封装/规格:TVS - 二极管, 10.3V Clamp 200A (8/20µs) Ipp Tvs Diode Surface Mount SMB (DO-214AA)。您可以下载SMLVT3V3参考资料、Datasheet数据手册功能说明书,资料中有SMLVT3V3 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 3.3VWM 10.3VC SMBTVS 二极管 - 瞬态电压抑制器 600W 3.3V Unidirect

产品分类

TVS - 二极管

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,STMicroelectronics SMLVT3V3SMLV, TRANSIL™

数据手册

点击此处下载产品Datasheet

产品型号

SMLVT3V3

不同频率时的电容

5200pF @ 1MHz

产品目录页面

点击此处下载产品Datasheet

产品种类

TVS 二极管 - 瞬态电压抑制器

供应商器件封装

SMB (DO-214AA)

其它名称

497-2496-1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM114/CL1460/SC234/PF64219?referrer=70071840

击穿电压

64.4 V

功率-峰值脉冲

600W

包装

剪切带 (CT)

单位重量

120 mg

单向通道

1

双向通道

-

商标

STMicroelectronics

商标名

Transil

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

DO-214AA,SMB

封装/箱体

DO-214AA

尺寸

3.95 mm W x 4.6 mm L x 2.45 mm H

峰值浪涌电流

50 A

峰值脉冲功率耗散

600 W

工作温度

-25°C ~ 175°C (TJ)

工作电压

3.3 V

工厂包装数量

2500

应用

通用

最大工作温度

+ 175 C

最小工作温度

- 65 C

极性

Unidirectional

标准包装

1

电压-击穿(最小值)

4.1V

电压-反向关态(典型值)

3.3V

电压-箝位(最大值)@Ipp

10.3V

电容

5200 pF

电流-峰值脉冲(10/1000µs)

200A (8/20µs)

电源线路保护

端接类型

SMD/SMT

类型

齐纳

系列

SMLVT

钳位电压

10.3 V

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PDF Datasheet 数据手册内容提取

SMLVT3V3 Low voltage Transil™ Datasheet - production data Description This is a Transil diode designed specifically to protect sensitive 3.3 V equipment against A transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their K instantaneous response to transient overvoltages make them particularly suited to protect voltage sensitive devices such as MOS technology and SMB low voltage supplied ICs. TM: Transil is a trademark of STMicroelectronics Features  Peak pulse power 600 W (10/1000 μs)  Stand-off voltage 3.3 V  Unidirectional type  Low clamping factor  Fast response time  JEDEC registered package outline April 2017 DocID4146 Rev 5 1/8 This is information on a product in full production. www.st.com

Characteristics SMLVT3V3 1 Characteristics Table 1: Absolute maximum ratings (limiting values at Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit Ppp Peak pulse power dissipation(1) Tj initial = Tamb 600 W P Power dissipation on infinite heatsink Tamb = 50 °C 6 W Non repetitive surge peak forward current tp = 10 ms IFSM for unidirectional types Tj initial = Tamb 100 A Tstg Storage temperature range -65 to +175 °C Tj Junction temperature range -55 to +175 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Notes: (1)For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2: Thermal resistances Symbol Parameter Value Unit Rth(j-l) Junction to leads 20 °C/W Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W Figure 1: Electrical characteristics (definitions) Table 3: Electrical characteristics (Tamb = 25 °C) IRM at VRM VBR at IR(1) VCL at IPP 10/1000 μs VCL at IPP 8/20 μs αT (2) C(3) Type Max. Min. Max. Max. Max. Typ. μA V V mA V A V A 10-4/°C pF SMLVT3V3 200 3.3 4.1 1 7.3 50 10.3 200 -5.3 5200 Notes: (1)Pulse test : tp < 50 ms (2)VBR = αT x (Tamb -25) x VBR (25 °C) (3)VR = 0 V, F = 1 MHz 2/8 DocID4146 Rev 5

SMLVT3V3 Characteristics 1.1 Characteristics (curves) Figure 2: Pulse waveform Figure 3: Peak pulse power dissipation versus Figure 4: Peak pulse power versus exponential initial junction temperature (printed circuit board) pulse duration PPP[Tjinitial] P (kW) 1.1 PPP[Tjinitial=25°C] 100.0 PP 1.0 Tjinitial=25°C 0.9 0.8 10.0 0.7 0.6 0.5 0.4 1.0 0.3 0.2 0.1 Tjinitial(°C) tP(ms) 0.0 0.1 0 25 50 75 100 125 150 175 200 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 Figure 5: Clamping voltage versus peak pulse Figure 6: Junction capacitance versus reverse current (exponential waveform, maximum values) applied voltage (typical values) VCL(V) C(pF) 10 5000 4000 F=1MHz Tj=25°C tp=20µs 8 3000 tp=1ms 2000 6 Ipp(A) VR(V) 4 1000 0.1 1.0 10.0 100.0 1 2 3 4 5 DocID4146 Rev 5 3/8

Characteristics SMLVT3V3 Figure 7: Peak forward voltage drop versus peak Figure 8: Transient thermal impedance, junction to forward current (typical values) ambient, versus pulse duration (PCB - FR4) IR(Tj) IR(Tj=25°C) Figure 9: Relative variation of leakage current versus junction temperature Z /R 1.00 th(j-a) th(j-a) Recommendedpadlayout 0.10 tP(µs) 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 4/8 DocID4146 Rev 5

SMLVT3V3 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  Case: JEDEC DO-214AA molded plastic over Planar junction  Epoxy meets UL94, V0  RoHS compliant package 2.1 SMB package information Figure 10: SMB package outline DocID4146 Rev 5 5/8

Package information SMLVT3V3 Table 4: SMB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 1.95 2.20 0.0768 0.0867 c 0.15 0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 Figure 11: SMB recommended Footprint Figure 12: Marking layout 1.62 2.60 1.62 0.064 (0.102) 0.064 Cathodebar(unidirectionaldevicesonly) ECOPACKstatus 2.18 XXX:Marking (0.086) x x x Z:Manufacturinglocation Y:Year WW:week z y ww 5.84 (0.230) millimeters (inches) 6/8 DocID4146 Rev 5

SMLVT3V3 Ordering information 3 Ordering information Figure 13: Ordering information scheme SM LVT 3V3 Surfacemount LowvoltageTransil Stand-offvoltage 3V3=3.3V Table 5: Ordering information Order code Marking Package Weight Base qty. Delivery mode SMLVT3V3 CD SMB 0.12 g 2500 Tape and reel 4 Revision history Table 6: Document revision history Date Revision Changes Aug-2001 2 Previous issue Reformatted to current standards. Added cathode bar marker 25-Apr-2007 3 in cover page graphics and Figure 11. 14-Sep-2011 4 Updated Junction temperature range in Table 1. Updated Table 1: "Absolute maximum ratings (limiting values 06-Apr-2017 5 at Tamb = 25 °C unless otherwise specified)". DocID4146 Rev 5 7/8

SMLVT3V3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 8/8 DocID4146 Rev 5

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