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  • 型号: SMF12AT1G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
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SMF12AT1G产品简介:

ICGOO电子元器件商城为您提供SMF12AT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SMF12AT1G价格参考¥0.76-¥0.76。ON SemiconductorSMF12AT1G封装/规格:TVS - 二极管, 。您可以下载SMF12AT1G参考资料、Datasheet数据手册功能说明书,资料中有SMF12AT1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 12VWM 19.9VC SOD123FL

产品分类

TVS - 二极管

品牌

ON Semiconductor

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

SMF12AT1G

PCN设计/规格

点击此处下载产品Datasheet

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同频率时的电容

-

供应商器件封装

SOD-123FL

其它名称

SMF12AT1GOSCT

功率-峰值脉冲

1000W (1kW)

包装

剪切带 (CT)

单向通道

1

双向通道

-

安装类型

表面贴装

封装/外壳

SOD-123F

工作温度

-55°C ~ 150°C

应用

通用

标准包装

1

电压-击穿(最小值)

13.3V

电压-反向关态(典型值)

12V

电压-箝位(最大值)@Ipp

19.9V

电流-峰值脉冲(10/1000µs)

10.1A (8/20µs)

电源线路保护

类型

齐纳

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PDF Datasheet 数据手册内容提取

TVS Diodes Surface Mount > 200W > SMF5.0AT1G Series SMF5.0AT1G Series Pb Description The SMF5.0AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and fast response time. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. Features • Stand−off Voltage: 5 − 58 Volts • Peak Power − 200 Watts @ 1 ms (SMF5.0A − SMF58A) • Low Leakage Maximum Ratings and Thermal Characteristics • Response Time is Typically < 1 ns Rating Symbol Value Unit • ESD Rating of Class 3 (> 16 kV) per Human Body Model • ESD Rating of Level 4 (8 kV Contact Discharge) per Maximum Ppk Dissipation (PW−10/1000 P 200 W µs) (Note 1) SMF5.0A − SMF58A PK IEC61000−4−2 • EFT (Electrical Fast Transients) Rating of 40 A per Maximum Ppk Dissipation @ TA = 25°C, P 1000 W (PW−8/20 µs) (Note 2) PK IEC61000−4−4 • Low Profile − Maximum Height of 1.0 mm D(NCo tPeo 3w)er Dissipation @ TA = 25°C PD 385 mW • Small Footprint − Footprint Area of 8.45 mm2 Derate Above 25°C 4.0 mW/°C Thermal Resistance from Junction−to− R8JA 325 °C/W • Supplied in 8 mm Tape and Reel − 3,000 Units per Reel Ambient (Note 3) • Cathode Indicated by Polarity Band Operating and Storage Temperature −55 to Range TJ, Tstg +150 °C • Lead Orientation in TaBpie-:d Ciraetchtoiodnea Lle ad to Sprocket Holes • These Devices are Pb−Free and are RoHS Compliant Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions Functional Diagram may affect device reliability. 1. Non−repetitive current pulse at TA = 25°C, per waveform of Figure 2. 2. Non−repetitive current pulse at TA = 25°C, per waveform of Figure 3. 3. Mounted with recommended minimum pad size, DC board FR−4. Cathode Anode Additional Information Uni-directional Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/13/17

TVS Diodes Surface Mount > 200W > SMF5.0AT1G Series I-V Curve Characteristics (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 4) = 12 A) A F F Symbol Parameter I I I Maximum Reverse Peak Pulse Current PP V Clamping Voltage @ I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current @ V R RWM I V I V Breakdown Voltage @ I BR T I Test Current T I Forward Current F I V Forward Voltage @ I F F 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. Ratings and Characteristic Curves Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 µs Pulse Waveform 10,000 tr . 100 1000 I tʺ 10 s I 2 100 tP 10 0 1.01 0 100 1000 10,000 t Figure 3. 8 X 20 µs Pulse Waveform Figure 4. Pulse Derating Curve 100 tr PEAK VALUE IRSM @ 8 s °160 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE 120 PEAK CURRENT DECAY = 8 s 60 100 HALF VALUE IRSM/2 @ 20 s 60 tP 20 10 20 0 0 ° © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/13/17

TVS Diodes Surface Mount > 200W > SMF5.0AT1G Series Figure 5. Typical Derating Factor for Duty Cycle Figure 6. Steady State Power Derating 1 0.2 0.1 200 100 0.02 100 s 10 s 0.01 0 1 20 100 0 ° Figure 7. Forward Voltage Figure 8. Capacitance vs. Working Peak Reverse Voltage 1000 1.2 1.0 100 0.6 10 0.2 0 1 1 10 100 1000 ° © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/13/17

TVS Diodes Surface Mount > 200W > SMF5.0AT1G Series Electrical Characteristics (T = 30°C unless otherwise noted, V = 1.25 Volts @ 200 mA) L F I (Max) V I @ V V @ I (V) (Note 6) @ I I @ V V (Max) PP Device RWM R RWM BR T T R RWM C (A) Device Marking V μA Min Nom Max mA (µA) (V) (Note 7) SMF5.0AG KE 5 400 6.4 6.7 7.0 10 400 9.2 21.7 SMF6.0AG KG 6 400 6.67 7.02 7.37 10 400 10.3 19.4 SMF6.5AG KK 6.5 250 7.22 7.60 7.98 10 250 11.2 17.9 SMF7.0AG KM 7 100 7.78 8.19 8.6 10 100 12 16.7 SMF7.5AG KP 7.5 50 8.33 8.77 9.21 1 50 12.9 15.5 SMF8.0AG KR 8 25 8.89 9.36 9.83 1 25 13.6 14.7 SMF9.0AG KV 9 5 10 10.55 11.1 1 5 15.4 13.0 SMF10AG KX 10 2.5 11.1 11.7 12.3 1 2.5 17 11.8 SMF11AG KZ 11 2.5 12.2 12.85 13.5 1 2.5 18.2 11.0 SMF12AG LE 12 2.5 13.3 14 14.7 1 2.5 19.9 10.1 SMF13AG LG 13 1 14.4 15.15 15.9 1 1 21.5 9.3 SMF14AG LK 14 1 15.6 16.4 17.2 1 1 23.2 8.6 SMF15AG LM 15 1 16.7 17.6 18.5 1 1 24.4 8.2 SMF18AG LT 18 1 20 21 22.1 1 1 29.2 6.8 SMF20AG LV 20 1 22.2 23.35 24.5 1 1 32.4 6.2 SMF22AG LX 22 1 24.4 25.6 26.9 1 1 35.5 5.6 SMF24AG LZ 24 1 26.7 28.1 29.5 1 1 38.9 5.1 SMF26AG ME 26 1 28.9 30.4 31.9 1 1 42.1 4.8 SMF28AG MG 28 1 31.1 32.8 34.4 1 1 45.4 4.4 SMF30AG MK 30 1 33.3 35.1 36.8 1 1 48.4 4.1 SMF33AG MM 33 1 36.7 38.7 40.6 1 1 53.3 3.8 SMF36AG MP 36 1 40 42.1 44.2 1 1 58.1 3.4 SMF48AG MX 48 1 53.3 56.1 58.9 1 1 77.4 2.6 SMF51AG MZ 51 1 56.7 59.7 62.7 1 1 82.4 2.4 SMF58AG NG 58 1 64.4 67.8 71.2 1 1 93.6 2.1 5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V ) which RWM should be equal to or greater than the DC or continuous peak operating voltage level. 6. V measured at pulse test current I at ambient temperature of 25°C. BR T 7. Surge current waveform per Figure 2 and derate per Figure 3. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/13/17

TVS Diodes Surface Mount > 200W > SMF5.0AT1G Series Dimensions Soldering Footrpint E D 1 2 A1 POOPLTAIORNITAYL IANSD INCEAETDOERD A TOP VIEW END VIEW HE c ORDERING INFORMATION SIDE VIEW 2XL Device Package Shipping† 2Xb SOD−123FL 3,000 / SMFxxxAT1G (Pb−Free) Tape & Reel BOTTOM VIEW Inches Millimeters Flow/Wave Soldering (Solder Dipping) Dim Min Nom Max Min Nom Max 260ºC A 0.035 0.037 0.039 0.90 0.95 0.98 Peak Temperature : Device Meets MSL 1 A1 0.000 0.002 0.004 0.00 0.05 0.10 Requirements b 0.028 0.035 0.043 0.70 0.90 1.10 c 0.004 0.006 0.008 0.10 0.15 0.20 Physical Specifications D 0.059 0.065 0.071 1.50 1.65 1.80 E 0.098 0.106 0.114 2.50 2.70 2.90 Case Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 L 0.022 0.030 0.037 0.55 0.75 0.95 HE 0.134 0.142 0.150 3.40 3.60 3.80 Lead Finish 100% Matte Sn (Tin) 0 0° − 8° 0° − 8° NOTES: Mounting Position Any 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. Part Marking System 1 2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/13/17