FAIRCHILD TVS Is Now Part of To learn more about Taiwan Semiconductor, please visit our website at www.taiwansemi.com Please note: The acquisition of this portfolio aligns with our strategy to expand in power semiconductor applications while strengthening our core circuit protection business. All of the Fairchild orderable part numbers will remain unchanged in order to maintain consistency with our customers. For more information regarding this acquisition please refer to ON Semi / Fairchild TVS Acquisition Q&A Version: A1806

S M C J 5 V 0 ( C ) A SMCJ5V0(C)A - SMCJ170(C)A - S M 1500 Watt Transient Voltage Suppressors C J 1 7 0 ( C Features ) A — • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability 1 5 on 10/1000 μs Waveform. 0 0 • Excellent Clamping Capability W • Low-Incremental Surge Resistance a t • Fast Response Time: Typically Less than 1.0 ps from 0 V SMC/DO-214AB t T to BV Minimum for Unidirectional and 5.0 ns for Bidirectional Band denotes cathode on unidirectional devices only. r No band on bi-directional devices. Bi-directional types a • Typical I Less than 1.0 μA Above 10 V have CA suffix where electrical characteristics apply in n R both directions suitable for bi-directional applications. s • UL Certificate #E258596 ie n • UL94V-0 Flammability Classification t V o l t a g e S u Absolute Maximum Ratings p p r Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- e s ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- s tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The o r absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. s A Symbol Parameter Value Unit P Peak Pulse Power Dissipation on 10/1000 μs Waveform 1500 W PPM I Peak Pulse Current on 10/1000 μs Waveform See table A PPM Non-Repetitive Peak Forward Surge Current I 200 A FSM Superimposed on Rated Load (JEDEC Method)(1) T Storage Temperature Range -55 to 150 °C STG T Operating Junction Temperature 150 °C J Note: 1.Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. SMCJ5V0(C)A - SMCJ170(C)A Version: A1806

S M Electrical Characteristics C J Values are at T = 25°C unless otherwise noted. 5 A V 0 Reverse Breakdown Clamping Reverse ( Uni-Directional Test Peak Pulse C Part Stand-Off Voltage Voltage Leakage ) Bi-DirDeecvtiiocneal (C) Marking(2) VVRoWltMa g(Ve ) MinV.BR (MV)ax. CITu (rmreAn)t aVtC I P(PVM) ICPuPMrr e(Ant) IaRt (VμRAW)(M3) A - S M SMCJ5V0(C)A GDE 5.0 6.40 7.00 10 9.2 163.0 1000 C SMCJ6V0(C)A GDG 6.0 6.67 7.37 10 10.3 145.6 1000 J 1 SMCJ6V5(C)A GDK 6.5 7.22 7.98 10 11.2 133.9 500 7 0 SMCJ7V0(C)A GDM 7.0 7.78 8.60 10 12.0 125.0 200 ( C SMCJ7V5(C)A GDP 7.5 8.33 9.21 1 12.9 116.3 100 )A SMCJ8V0(C)A GDR 8.0 8.89 9.83 1 13.6 110.3 50 — SMCJ8V5(C)A GDT 8.5 9.44 10.4 1 14.4 104.2 20 1 5 SMCJ9V0(C)A GDV 9.0 10.0 11.1 1 15.4 97.4 10 0 0 SMCJ10(C)A GDX 10 11.1 12.3 1 17.0 88.2 5 W SMCJ11(C)A GDZ 11 12.2 13.5 1 18.2 82.4 5 a t SMCJ12(C)A GEE 12 13.3 14.7 1 19.9 75.3 5 t T SMCJ13(C)A GEG 13 14.4 15.9 1 21.5 69.8 5 ra n SMCJ14(C)A GEK 14 15.6 17.2 1 23.2 64.7 5 s i SMCJ15(C)A GEM 15 16.7 18.5 1 24.4 61.5 5 e n SMCJ16(C)A GEP 16 17.8 19.7 1 26.0 57.7 5 t V SMCJ17(C)A GER 17 18.9 20.9 1 27.6 54.3 5 o l t SMCJ18(C)A GET 18 20.0 22.1 1 29.2 51.4 5 a g SMCJ20(C)A GEV 20 22.2 24.5 1 32.4 46.3 5 e S SMCJ22(C)A GEX 22 24.4 26.9 1 35.5 42.3 5 u p SMCJ24(C)A GEZ 24 26.7 29.5 1 38.9 38.6 5 p r SMCJ26(C)A GFE 26 28.9 31.9 1 42.1 35.6 5 e s SMCJ28(C)A GFG 28 31.1 34.4 1 45.4 33.0 5 s o SMCJ30(C)A GFK 30 33.3 36.8 1 48.4 31.0 5 r s SMCJ33(C)A GFM 33 36.7 40.6 1 53.3 28.1 5 SMCJ36(C)A GFP 36 40.0 44.2 1 58.1 25.8 5 SMCJ40(C)A GFR 40 44.4 49.1 1 64.5 23.3 5 SMCJ43(C)A GFT 43 47.8 52.8 1 69.4 21.6 5 SMCJ45(C)A GFV 45 50.0 55.3 1 72.7 20.6 5 SMCJ48(C)A GFX 48 53.3 58.9 1 77.4 19.4 5 SMCJ51(C)A GFZ 51 56.7 62.7 1 82.4 18.2 5 SMCJ54(C)A GGE 54 60.0 66.3 1 87.1 17.2 5 SMCJ58(C)A GGG 58 64.4 71.2 1 93.6 16.0 5 SMCJ60(C)A GGK 60 66.7 73.7 1 96.8 15.5 5 SMCJ64(C)A GGM 64 71.1 78.6 1 103.0 14.6 5 SMCJ70(C)A GGP 70 77.8 86.0 1 113.0 13.3 5 SMCJ75(C)A GGR 75 83.3 92.1 1 121.0 12.4 5 SMCJ78(C)A GGT 78 86.7 95.8 1 126.0 11.9 5 Notes: 2.Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3.For bidirectional parts with V < 10 V, the I max limit is doubled. RWM R SMCJ5V0(C)A - SMCJ170(C)A 2 Version: A1806

S M Electrical Characteristics (Continued) C J Values are at T = 25°C unless otherwise noted. 5 A V 0 Reverse Breakdown Clamping Reverse (C Uni-Directional Test Peak Pulse Part Stand-Off Voltage Voltage Leakage ) Bi-Directional (C) Current Current A Device Marking(2) Voltage VBR (V) I (mA) at IPPM I (A) at VRWM - VRWM (V) Min. Max. T VC (V) PPM IR (μA)(3) S M SMCJ85(C)A GGV 85 94.4 104.0 1 137.0 10.9 5 C SMCJ90(C)A GGX 90 100.0 111.0 1 146.0 10.3 5 J 1 SMCJ100(C)A GGZ 100 111.0 123.0 1 162.0 9.3 5 7 0 SMCJ110(C)A GHE 110 122.0 135.0 1 177.0 8.5 5 (C ) SMCJ120(C)A GHG 120 133.0 147.0 1 193.0 7.8 5 A SMCJ130(C)A GHK 130 144.0 159.0 1 209.0 7.2 5 — SMCJ150(C)A GHM 150 167.0 185.0 1 243.0 6.2 5 1 5 SMCJ160(C)A GHP 160 178.0 197.0 1 259.0 5.8 5 0 0 SMCJ170(C)A GHR 170 189.0 209.0 1 275.0 5.5 5 W a Notes: t t 2.Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. T r 3.For bidirectional parts with V < 10 V, the I max limit is doubled. a RWM R n s i e n t V o l t a g e S u p p r e s s o r s SMCJ5V0(C)A - SMCJ170(C)A 3 Version: A1806

S M Typical Performance Characteristics C J 5 V 0 ( C 100 ) 100 A - S R (kW) 10 TA = 25 º C R (%) 75 MC E E J W W 1 O O 50 7 LSE P 1 LSE P 0(C PU PU 25 )A — 0.1 0 1 0.0001 0.001 0.01 0.1 1 10 0 25 50 75 100 125 150 175 200 5 PULSE WIDTH (ms) AMBIENT TEMPERATURE (º C) 0 0 W Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve a t t T URRENT (%)110500 PItpfe p=am k1 0V μμμμa sluece CPaTs Auu rl t=srh ee2en 5WPt º DoiCdientcht a W(ytdsh) et iorse 5D t0he%efi noPefe daIpkp CE (pF)12100000000000 VTf i =As g=1 MZ . 2=0ee 5 5rMa ºo 0sHC mBu z ri aeV sdp - ap t ransient V C Half Value-Ipp N o AK PULSE 50 a10s /21D 0 e 0 fi0nμμμμesde bc yW Ra.vEe.Afo.r m CAPACITA 100 MSVtoealantsadug-Oree fd(fV aR tW M ) ltage S PE e-kt u td p p 0 0 1 2 3 4 101 5 10 50 100 200 400 re TIME (ms) REVERSE VOLTAGE (V) s s o Figure 3. Pulse Waveform Figure 4. Junction Capacitance r s A) (cid:20)(cid:19)(cid:19)(cid:19) T ( N 8.3ms Single Half Sine Wave RE UNIDIRECTIONAL ONLY R U C E G R U D S (cid:20)(cid:19)(cid:19) R A W R O F K A E P M, S (cid:20)(cid:19) F I (cid:20) (cid:20)(cid:19) (cid:20)(cid:19)(cid:19) NUMBER OF CYCLES AT 60 Hz Figure 5. Non-Repetitive Surge Current SMCJ5V0(C)A - SMCJ170(C)A 4 Version: A1806

S M Physical Dimension C J 5 V 0 ( C ) A - S M C J 1 7 0 ( C ) A — 1 5 0 0 W a t t T r a n s i e n t V o l t a g e S u p p r e s s o r s Figure 6. 2-LEAD, SMC, JEDEC DO-214, VARIATION AB (ACTIVE) SMCJ5V0(C)A - SMCJ170(C)A 5 Version: A1806