SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • T = 175 °C capability suitable for high reliability J and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop DO-218AB • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc?99912 V 11.1 V to 52.8 V BR TYPICAL APPLICATIONS P (10 x 1000 μs) 6600 W PPM P (10 x 10 000 μs) 5200 W Use in sensitive electronics protection against voltage PPM transients induced by inductive load switching and lighting, P 8 W D especially for automotive load dump protection application. V 10 V to 43 V WM I 700 A FSM MECHANICAL DATA T max. 175 °C J Polarity Uni-directional Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Package DO-218AB Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ..., revision code only applicable for part number with ± 5 % tolerance) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (T = 25 °C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT with 10/1000 μs waveform 6600 Peak pulse power dissipation P W PPM with 10/10 000 μs waveform 5200 Power dissipation on infinite heatsink at T = 25 °C (fig. 1) P 8.0 W C D Peak pulse current with 10/1000 μs waveform I (1) See next table A PPM Peak forward surge current 8.3 ms single half sine-wave I 700 A FSM Operating junction and storage temperature range T , T -55 to +175 °C J STG Note (1) Non-repetitive current pulse derated above T = 25 °C A Revision: 31-Aug-16 1 Document Number: 88387 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) C BREAKDOWN MAXIMUM MAXIMUM REVERSE MAX. PEAK MAXIMUM TEST STAND-OFF VOLTAGE REVERSE LEAKAGE PULSE CURRENT CLAMPING DEVICE CURRENT VOLTAGE V (V) LEAKAGE AT V AT 10/1000 μs VOLTAGE TYPE BR I V WM T WM AT V T = 175 °C WAVEFORM AT I MIN. MAX. (mA) (V) I (μWAM) JI (μA) (A) V P(VP)M D D C SM8S10 11.1 13.6 5.0 10.0 15 250 351 18.8 SM8S10A 11.1 12.3 5.0 10.0 15 250 388 17.0 SM8S11 12.2 14.9 5.0 11.0 10 150 328 20.1 SM8S11A 12.2 13.5 5.0 11.0 10 150 363 18.2 SM8S12 13.3 16.3 5.0 12.0 10 150 300 22.0 SM8S12A 13.3 14.7 5.0 12.0 10 150 332 19.9 SM8S13 14.4 17.6 5.0 13.0 10 150 277 23.8 SM8S13A 14.4 15.9 5.0 13.0 10 150 307 21.5 SM8S14 15.6 19.1 5.0 14.0 10 150 256 25.8 SM8S14A 15.6 17.2 5.0 14.0 10 150 284 23.2 SM8S15 16.7 20.4 5.0 15.0 10 150 245 26.9 SM8S15A 16.7 18.5 5.0 15.0 10 150 270 24.4 SM8S16 17.8 21.8 5.0 16.0 10 150 229 28.8 SM8S16A 17.8 19.7 5.0 16.0 10 150 254 26.0 SM8S17 18.9 23.1 5.0 17.0 10 150 216 30.5 SM8S17A 18.9 20.9 5.0 17.0 10 150 239 27.6 SM8S18 20.0 24.4 5.0 18.0 10 150 205 32.2 SM8S18A 20.0 22.1 5.0 18.0 10 150 226 29.2 SM8S20 22.2 27.1 5.0 20.0 10 150 184 35.8 SM8S20A 22.2 24.5 5.0 20.0 10 150 204 32.4 SM8S22 24.4 29.8 5.0 22.0 10 150 168 39.4 SM8S22A 24.4 26.9 5.0 22.0 10 150 186 35.5 SM8S24 26.7 32.6 5.0 24.0 10 150 153 43.0 SM8S24A 26.7 29.5 5.0 24.0 10 150 170 38.9 SM8S26 28.9 35.3 5.0 26.0 10 150 142 46.6 SM8S26A 28.9 31.9 5.0 26.0 10 150 157 42.1 SM8S28 31.1 38.0 5.0 28.0 10 150 132 50.1 SM8S28A 31.1 34.4 5.0 28.0 10 150 145 45.4 SM8S30 33.3 40.7 5.0 30.0 10 150 123 53.5 SM8S30A 33.3 36.8 5.0 30.0 10 150 136 48.4 SM8S33 36.7 44.9 5.0 33.0 10 150 112 59.0 SM8S33A 36.7 40.6 5.0 33.0 10 150 124 53.3 SM8S36 40.0 48.9 5.0 36.0 10 150 103 64.3 SM8S36A 40.0 44.2 5.0 36.0 10 150 114 58.1 SM8S40 44.4 54.3 5.0 40 10 150 92.4 71.4 SM8S40A 44.4 49.1 5.0 40 10 150 102 64.5 SM8S43 47.8 58.4 5.0 43 10 150 86 76.7 SM8S43A 47.8 52.8 5.0 43 10 150 95.1 69.4 Note • For all types maximum V = 1.8 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum Revision: 31-Aug-16 2 Document Number: 88387 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.90 °C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13" diameter plastic tape and reel, SM8S10AHE3/2D (1) 2.605 2D 750 anode towards the sprocket hole 13" diameter plastic tape and reel, SM8S10AHE3_A/I (1) 2.605 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 8.0 150 t = 10 μs T = 25 °C r J Pulse Width (t) is d %) Defined as the Point on (W) 6.0 urrent ( 100 PIPePMak Value WDehcearey sth teo P50ea %k Couf rIrPePnMt wer Dissipati 4.0 Peak Pulse C 50 HIPaPMlf Value - IP2P Po 2.0 ut p n I t d 0 0 0 50 100 150 200 0 10 20 30 40 Case Temperature (°C) t - Time (ms) Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform 6000 10 000 5000 W) er (W)4000 wer ( w o o P P e mp 3000 urg u S D e ad 2000 ers o v L e R 1000 0 1000 25 50 75 100 125 150 175 10 100 Case Temperature (°C) Pulse Width (ms) - ½ I Exponential Waveform PP Fig. 2 - Load Dump Power Characteristics Fig. 4 - Reverse Power Capability (10 ms Exponential Waveform) Revision: 31-Aug-16 3 Document Number: 88387 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor 100 100 000 W) TJ = 25 °C C/ F) f = 1.0 MHz e (° 10 RθJA e (p Vsig = 50 mVp-p c c n n a a ed cit p a mal Im 1 RθJC n Cap 10 000 Measured at Zero Bias nsient Ther 0.1 C - JunctioJ Measured at Stand-Off Tra Voltage VWM 0.01 1000 0.01 0.1 1 10 100 10 15 20 25 30 35 40 45 t - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) Mounting Pad Layout 0.539 (13.7) 0.524 (13.3) 0.150 (3.8) 0.116 (3.0) 0.126 (3.2) 0.093 (2.4) 0.091 (2.3) 0.413 (10.5) 0.342 (8.7) 0.067 (1.7) 0.374 (9.5) 0.327 (8.3) 0.413 (10.5) 0.116 (3.0) 0.374 (9.5) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.366 (9.3) 0.382 (9.7) Lead 1 0.343 (8.7) 0.606 (15.4) 0.197 (5.0) 0.583 (14.8) 0.185 (4.7) 0.138 (3.5) 0.098 (2.5) 0.098 (2.5) 0.016 (0.4) MIN. 0.059 (1.5) Lead 2/Metal Heatsink 0.028 (0.7) 0.020 (0.5) Revision: 31-Aug-16 4 Document Number: 88387 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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