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  • 型号: SM36T1G
  • 制造商: ON Semiconductor
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SM36T1G产品简介:

ICGOO电子元器件商城为您提供SM36T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SM36T1G价格参考。ON SemiconductorSM36T1G封装/规格:TVS - 二极管, 60V Clamp 4A (8/20µs) Ipp Tvs Diode Surface Mount SOT-23-3 (TO-236)。您可以下载SM36T1G参考资料、Datasheet数据手册功能说明书,资料中有SM36T1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 36VWM 60VC SOT23-3TVS二极管阵列 LOW NOISE AMPLIFIER

产品分类

TVS - 二极管

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS二极管阵列,ON Semiconductor SM36T1G-

数据手册

点击此处下载产品Datasheet

产品型号

SM36T1G

不同频率时的电容

-

产品种类

TVS二极管阵列

供应商器件封装

SOT-23-3(TO-236)

其它名称

SM36T1GOSDKR

击穿电压

40 V

功率-峰值脉冲

300W

包装

Digi-Reel®

单向通道

2

双向通道

-

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23

尺寸

1.3 mm W x 2.9 mm L x 1 mm H

峰值浪涌电流

4 A

峰值脉冲功率耗散

300 W

工作温度

-55°C ~ 150°C (TJ)

工作电压

36 V

工厂包装数量

3000

应用

通用

最大工作温度

+ 150 C

最小工作温度

- 55 C

极性

Unidirectional

标准包装

1

电压-击穿(最小值)

40V

电压-反向关态(典型值)

36V

电压-箝位(最大值)@Ipp

60V

电流-峰值脉冲(10/1000µs)

4A (8/20µs)

电源线路保护

端接类型

SMD/SMT

类型

齐纳

系列

SMxxT1

通道

2 Channels

钳位电压

60 V

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PDF Datasheet 数据手册内容提取

SM05T1G(cid:2)Series ESD Protection Diode Array Dual Common Anode These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such www.onsemi.com as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: SOT−23 • CASE 318 SOT−23 Package Allows Either Two Separate Unidirectional STYLE 12 Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 5.0 V to 36 V 1 PIN1.CATHODE • Peak Power − 300 Watt (8/20 (cid:2)s) 3 2.CATHODE • Low Leakage − 1.0 (cid:2)A 2 3.ANODE • Flammability Rating UL 94 V−0 MARKING DIAGRAM • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • xxM M(cid:2) These are Pb−Free Devices (cid:2) Mechanical Characteristics: 1 CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case FINISH: Corrosion Resistant Finish, Easily Solderable xxM =Device Code xx = 05, 12, 15, 24, 36 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds M =Date Code* (cid:2) =Pb−Free Package Package Designed for Optimal Automated Board Assembly (Note: Microdot may be in either location) Small Package Size for High Density Applications *Date Code orientation and/or overbar may Available in 8 mm Tape and Reel vary depending upon manufacturing location. Use the Device Number to Order the 7 Inch/3,000 Unit Reel Replace the “T1” with “T3” in the Device Number to Order the ORDERING INFORMATION 13 Inch/10,000 Unit Reel Device Package Shipping† SM05T1G SOT−23 3,000/Tape & Reel (Pb−Free) SZSM05T1G SOT−23 3,000/Tape & Reel (Pb−Free) SM12T1G SOT−23 3,000/Tape & Reel (Pb−Free) SM15T1G SOT−23 3,000/Tape & Reel (Pb−Free) SM24T1G SOT−23 3,000/Tape & Reel (Pb−Free) SM36T1G SOT−23 3,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: August, 2018 − Rev. 9 SM05T1/D

SM05T1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 20 (cid:2)s (Note 1) @ TL ≤ 25°C Ppk 300 W IEC 61000−4−2 (ESD) kV Air ±15 Contact ±26 IEC 61000−4−4 (EFT) 40 A IEC 61000−4−5 (Lightning) 12 A Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C °PD° 225 °mW° Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:3)JA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C °PD 300 °mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:3)JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 3 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP IF VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT VC VBRVRWM IT Test Current IR VF V (cid:4)VBR Maximum Temperature Coefficient of VBR IT IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IPP IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Typical VBR, Breakdown Voltage VIPCP @= Max IPP Capacitance VRWM IR @ VRWM (Volts) IT 1 Amp (Note 4) (pF) Device Pin 1 to 3 Device* Marking (Volts) ((cid:2)A) Min Max mA (Volts) (Amps) @ 0 Volts SM05T1G 05M 5 10 6.2 7.3 1.0 9.8 17 225 SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95 SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100 SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60 SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. 8/20 (cid:2)s pulse waveform per Figure 3 *Include SZ-prefix devices where applicable. www.onsemi.com 2

SM05T1G Series TYPICAL CHARACTERISTICS 10 300 W) W) ER (k N (m 250 ALUMINA SUBSTRATE W O O 1 TI 200 ULSE P DISSIPA 150 AK P 0.1 WER 100 PE O FR−5 BOARD , PP , PD 50 P P 0.01 0 0.1 1 10 100 1000 0 25 50 75 100 125 150 175 tp, PULSE DURATION ((cid:2)s) TEMPERATURE (°C) Figure 1. Non−Repetitive Peak Pulse Power Figure 2. Steady State Power Derating Curve versus Pulse Time 100 250 tr PEAK VALUE IRSM @ 8 (cid:2)s 90 T EN 80 PULSE WIDTH (tP) IS DEFINED CURR 70 APSE ATKH ACTU RPOREINNTT W DHEECRAEY T= H8E (cid:2)s E (pF)210 SE 60 NC PUL 50 HALF VALUE IRSM/2 @ 20 (cid:2)s CITA170 PEAK 4300 CAPA F tP C, 130 O 20 % 10 0 90 0 20 40 60 80 0 1 2 3 4 5 t, TIME ((cid:2)s) BIAS VOLTAGE (VOLTS) Figure 3. 8/20 (cid:2)s Pulse Waveform Figure 4. Typical Diode Capacitance (SM05) 100 90 80 F) p 70 E ( C 60 N A T 50 CI A 40 P A C 30 C, 20 10 0 0 1 5 8 12 BIAS VOLTAGE (VOLTS) Figure 5. Typical Diode Capacitance (SM12) www.onsemi.com 3

SM05T1G Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT−23 when board space is at a premium. Two simplified examples package protects four separate lines using only one package. of surge protection applications are illustrated below. This adds flexibility and creativity to PCB design especially Computer Interface Protection A KEYBOARD B TERMINAL FUNCTIONAL I/O C PRINTER DECODER D ETC. GND SM05T1G Series Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O SM05T1 Series CLOCK CONTROL BUS GND SM05T1G Series www.onsemi.com 4

SM05T1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 12: END VIEW PIN 1. CATHODE 2. CATHODE 3. ANODE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com SM05T1/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: SM15T1G SM24T1G SM36T1G SZSM05T1G