ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 阵列 > SLA5064
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SLA5064产品简介:
ICGOO电子元器件商城为您提供SLA5064由Sanken设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SLA5064价格参考。SankenSLA5064封装/规格:晶体管 - FET,MOSFET - 阵列, 3 个 N 沟道和 3 个 P 沟道(3 相桥式) Mosfet 阵列 60V 10A 5W 通孔 12-SIP(带鳍片)。您可以下载SLA5064参考资料、Datasheet数据手册功能说明书,资料中有SLA5064 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS ARRAY 1PH MOTOR DVR 12-SIP |
产品分类 | FET - 阵列 |
FET功能 | 逻辑电平门 |
FET类型 | 3 个 N 沟道和 3 个 P 沟道(3 相桥式) |
品牌 | Sanken |
数据手册 | |
产品图片 | |
产品型号 | SLA5064 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同Id时的Vgs(th)(最大值) | - |
不同Vds时的输入电容(Ciss) | 460pF @ 10V |
不同Vgs时的栅极电荷(Qg) | - |
不同 Id、Vgs时的 RdsOn(最大值) | 140 毫欧 @ 5A,4V |
供应商器件封装 | 12-SIP |
其它名称 | SLA5064 DK |
功率-最大值 | 5W |
包装 | 散装 |
安装类型 | 通孔 |
封装/外壳 | 12-SIP |
标准包装 | 1,080 |
漏源极电压(Vdss) | 60V |
电流-连续漏极(Id)(25°C时) | 10A |
SLA5064 N-channel+P-channel 3-phase motor drive External dimensionsA • • • SLA (12-pin) Absolute maximum ratings (Ta=25°C) Ratings Symbol Unit N channel P channel VDSS 60 –60 V VGSS ±20 ±20 V ID 10 –10 A ID(pulse) 15 (PW≤1ms, duty≤25%) –15 (PW≤1ms, duty≤25%) A 5 (Ta=25°C, with all circuits operating, without heatsink) W PT 40 (Tc=25°C, with all circuits operating, with infinite heatsink) W θj-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θj-c 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C (cid:1) Equivalent circuit diagram 5 12 4 6 11 3 7 10 2 8 9 1 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) 15 N-ch (Ta=25°C) –15 P-ch (Ta=25°C) 15 N-ch (VDS=10V) 4.0V 1124 10V ––1124 –10V –4.0V 1124 10 –10 10 3.5V –3.5V A) 8 A) –8 A) 8 I(D 6 3.3V I(D –6 –3.3V I(D 6 TC=125°C 4 3.0V –4 –3.0V 4 25°C 2 VGS=2.7V –2 VGS=–2.7V 2 –40°C 0 0 0 0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) 0.20 N-ch TVaG=S2=54°VC 0.20 P-ch TVaG=S2=5–°1C0V –15 P-ch (VDS=10V) –14 0.18 0.18 0.16 0.16 –12 0.14 0.14 –10 Ω R()DS (ON) 000...011802 Ω R()DS (ON) 000...011802 I(A)D ––68 TC=125°C 0.06 0.06 –4 0.04 0.04 25°C 0.02 0.02 –2 –40°C 0.000 1 2 3 4 5 6 7 8 9101112131415 0.000 –1–2–3–4–5–6–7–8–9–10–11–12–13–14–15 00 –1 –2 –3 –4 –5 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) 0.20 N-ch IVDG=S5=A4V 0.20 P-ch VIDG=S–=5–A10V 0.18 0.18 0.16 0.16 0.14 0.14 ΩR()DS (ON) 000...011802 ΩR()DS (ON) 000...011802 0.06 0.06 0.04 0.04 0.02 0.02 0.0--0-40 0 50 100 150 0.0---040 0 50 100 150 TC (°C) TC (°C) 88
SLA5064 Electrical characteristics (Ta=25°C) N channel P channel Symbol Specification Specification Unit Conditions Unit Conditions min typ max min typ max V(BR)DSS 60 V ID=100µA, VGS=0V –60 V ID=–100µA, VGS=0V IGSS ±10 µA VGS=±20V 10 µA VGS=±20V IDSS 100 µA VDS=60V, VGS=0V –100 µA VDS=–60V, VGS=0V VTH 1.0 2.0 V VDS=10V, ID=250µA –1.0 –2.0 V VDS=–10V, ID=–250µA Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A RDS(ON) 0.14 Ω VGS=4V, ID=5A 0.14 Ω VGS=–10V, ID=–5A Ciss 460 pF 1200 pF VDS=10V, f=1.0MHz, VDS=–10V, f=1.0MHz, Coss 225 pF 440 pF VGS=0V VGS=0V Crss 50 pF 120 pF td(on) 25 ns 50 ns ID=5A, VDD 20V, ID=–5A, VDD 20V, tr 110 ns 170 ns RL=4Ω, VGS=5V, RL=4Ω, VGS=–5V, td(off) 90 ns 180 ns see Fig. 3 on page 16. see Fig. 4 on page 16. tf 55 ns 100 ns VSD 1.15 V ISD=10A, VGS=0V –1.25 V ISD=–10A, VGS=0V ISD=5A, VGS=0V, ISD=–5A, VGS=0V, trr 75 ns 100 ns di/dt=100A/µs di/dt=100A/µs Characteristic curves Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA) TC=25°C 20 N-ch (VDS=10V) 20 P-ch (VDS=–10V) 20 N-ch SINGLE1 0P0UµLsSE 10 10 10 Re (yfs) (S) 1 25°TCC=–40°C Re (yfs) (S) 1 125°2C5°TCC=–40°C I(A)D 1 RDS (ON ) LIMITED 10ms1ms 125°C 0.1 0.1 0.1 0.05 0.1 1 10 20 –0.05 –0.1 –1 –10 –20 0.1 1 10 100 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) 5000N-ch N-c(hTa=25°C) Vf=G1SM=H0Vz 5000P-ch P-c(Tha=25°C) Vf=G1SM=H0Vz –20 P-ch TSICN=G2LE150 P°0CUµsLSE Capacitance (pF)1010000 CCoissss Capacitance (pF)1100000 CCCoirssssss I(A)D ––110 RDS (ON ) L IMITED 10ms1ms Crss 10 10 –0.1 0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –1 –10 –100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) PT-Ta Characteristics 15 N-ch (Ta=25°C) –15 P-ch (Ta=25°C) 40 All Circuits Operating 14 –14 35 13 –13 12 –12 30 11 –11 30 I(A)DR 1567890 VGS=10V4V 0V I(A)DR ––––––1567890 VGS=––140VV 0V P(W)T 22215505 With Infinite Heatsink 4 –4 3 –3 10 2 –2 5 Without Heatsink 1 –1 0 0 0 0 0.5 1.0 1.5 0 –0.5 –1.0 –1.5 0 50 100 150 VSD (V) VSD (V) Ta (°C) 89
Package Type (Dimensions) (cid:127) SIP 8 (STA8Pin) (cid:127) SIP 10 (STA10Pin) 20.4 max 25.25±0.2 ±0.211.32.5 max±0.29.0 ±0.211.3 ±0.22.3 ±0.29.0 ab ±0.5 ±0.5 4.7 4.7 1.0±0.25 0.5±0.15 (2.54) a: Part Number 1.0±0.25 0.5±0.15 (2.54) 9 × 2.54 = 22.86±0.25 b: Lot No. ±0.21.2±0.150.5 C1.5±0.57 ×P 2.54 = 17.78 C1.5±0.5 ±0.150.5 ±0.21.2±0.24.0 ±0.2 4.0 E1 B2 C3 B4 C5 B6 C7 B8 C9 1E0 1 2 3 4 5 6 78 Pin No. (cid:127) SIP 12 (SMA12Pin) (cid:127) SIP 15 (SMA15Pin) 31.0±0.2 4.0±0.2 2.5±0.2 4.0±0.2 31.0±0.2 2.5±0.2 ±0.2 b 10.2 a ±0.210.2(10.4) 2.4 a b 1.46±0.15 0.65+‒00..12 * * 1.15+‒00..12 R-End *40(3.0)±0.5..6.705±5+‒0+1.000.7..1‒0.529.7 2.54 0.85+‒00..12 0.55+‒00..12 1.2±0.1 14 × P2.03±0.7= 28.42±1.0 27.94 a: Part Number b: Lot No. 1 2 34 56 7 8 9101112131415 (cid:127) SIP 12 with Fin (SLA12Pin) (cid:127) SIP 15 with Fin (SLA15Pin) 31.3±0.2 31.5max φ3.2±0.15 3214..04±±00..22 φ3.2±0.1 5× 3.8 4.8±0.2 φ3.2±0.15 31.0±0.2 E3l.2lip±s0e.1 5× 3.8 4.8±0.2 16.4±0.2 1.7±0.1 24.4±0.2 1.7±0.1 ±0.29.5min16.0 ±0.22.713.01.2±Pi0n.115 a b 1.45±0.15 01.285+‒00..12 0.55+‒00..12 2.2±0.7 0.65+‒00..12 14 × P*2.03±0.7=2*8.42±1.0 1.1±0.29.95+‒00±0.2..13.012 ±0.216.0 R-End *420(3.0)±0.5...6.70455±5±+‒0+1.000...710‒0.529.7.2 a: Part Number 11 × P2.54±0. 7= 27.94±1.0 b: Lot No. 123 456 789101112131415 (cid:127) SIP 21 with Fin (SLA21Pin) 31.0±0.2 24.4±0.2 φ3.2±0.1 5× 3.8 4.8±0.2 16.4±0.2 1.7±0.1 Gate burr φ3.2±0.15 a b ±0.29.9 ±0.212.9±0.216 ±0.617.9(5) 2.45±0.2 4‒(R1) 0.65+‒00..12 20 × P1.43±0.5=28.6±1.0 0.5 0.55+‒00..12 ±3 4±0.7 31.3±0.2 a: Part Number b: Lot No. 123456789101112131415161718192021 (Unit:mm) 190 Transistors