SL02 / 03 / 04 Vishay Semiconductors Small Signal Schottky Diodes Features • For surface mounted applications (cid:129) Low-profile package e3 (cid:129) Ideal for automated placement (cid:129) Low power loss, high efficiency (cid:129) High temperature soldering: 17249 260°C/10 seconds at terminals (cid:129) Lead (Pb)-free component (cid:129) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: JEDEC DO-219AB (SMF) Plastic case Polarity: Color band denotes cathode end Weight: approx. 15 mg Packaging codes-options: G18 / 10 k per 13" reel (8 mm tape), 50 k/box G08 / 3 k per 7" reel (8 mm tape), 30 k/box Parts Table Part Ordering code Marking Remarks SL02 SL02-GS18 or SL02-GS08 S2 Tape and Reel SL03 SL03-GS18 or SL03-GS08 S3 Tape and Reel SL04 SL04-GS18 or SL04-GS08 S4 Tape and Reel Absolute Maximum Ratings T = 25°C, unless otherwise specified amb Parameter Test condition Part Symbol Value Unit Maximum repetitive peak SL02 V 20 V RRM reverse voltage SL03 V 30 V RRM SL04 V 40 V RRM Maximum RMS voltage SL02 V 14 V RMS SL03 V 21 V RMS SL04 V 28 V RMS Document Number 85687 www.vishay.com Rev. 1.6, 13-Apr-05 1

SL02 / 03 / 04 Vishay Semiconductors Parameter Test condition Part Symbol Value Unit Maximum DC blocking voltage SL02 V 20 V DC SL03 V 30 V DC SL04 V 40 V DC Maximum average forward T = 109°C I 1.1 A tp F(AV) rectified current Peak forward surge current I 40 A FSM 8.3 ms single half sine-wave Thermal Characteristics T = 25°C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Thermal resistance junction to R 180 K/W thJA ambient air2) Maximum operating junction T 125 °C J temperature Storage temperature range T - 55 to 150 °C STG 2)Mounted on epoxy substrate with 3 x 3 mm Cu pads (≥ 40 μm thick) Electrical Characteristics T = 25°C, unless otherwise specified amb Parameter Test condition Part Symbol Min Typ. Max Unit Instaneous forward voltage at SL02 V 0.360 0.385 V F 0.51) SL03 V 0.395 0.43 V F SL04 V 0.450 0.51 V F Typical instantaneous forward 1.1 A SL02 V 0.420 V F voltage SL03 V 0.450 V F SL04 V 0.530 V F Maximum DC reverse current at T = 25°C SL02 I 250 μA A R rated DC blocking voltage T = 100°C SL02 I 8.0 mA A R T = 25°C SL03 I 130 μA A R T = 100°C SL03 I 6.0 mA A R T = 25°C SL04 I 20 μA A R T = 100°C SL04 I 6.0 mA A R 1) Pulse test: 300 μs pulse width, 1 % duty cycle www.vishay.com Document Number 85687 2 Rev. 1.6, 13-Apr-05

SL02 / 03 / 04 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.5 10000 A) TJ=100°C A) μnt(1000 TJ=75°C ( e Current 1.0 seCurr TJ=50°C ward Rever 100 TJ=25°C or s F 0.5 u Average stantaneo 10 n 0 I 1 0 10 30 50 70 90 110 130 150 0 5 10 15 20 25 17379 Leadtemperature(°C) 17382 ReverseVoltage(V) Figure1. Forward Current Derating Curve Figure4. Typical Reverse Current Characteristics - SL02 250 10 A) ( (pF) 200 urrent 1 TJ=100°C e C nc d TJ=75°C cita 150 war 0.1 apa For TJ=50°C C s Junction15000 SL02 antaneou0.00.0011 TJ=25°C st SL04 In PulseWidth=300μs 1%DutyCycle 10 0.0001 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 17380 ReverseVoltage(V) 17383 InstantaneousForwardVoltage(V) Figure2. Typical Junction Capacitance Figure5. Typical Instantaneous Forward Characteristics - SL03 10 10000 A) ForwardCurrent( 0.11 TJ=100°C TJT=J5=07°5C°C μverseCurrent(A)1010000 TTJJ=T=J150=00°7°C5C°C ntaneous 0.01 TJ=25°C neousRe 10 TJ=25°C sta0.001 nta 1 In PulseWidth=300μs sta 1%DutyCycle n 0.0001 I 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 17381 InstantaneousForwardVoltage(V) 17384 ReverseVoltage(V) Figure3. Typical Instantaneous Forward Characterisics - SL02 Figure6. Typical Reverse Current Characteristics - SL03 Document Number 85687 www.vishay.com Rev. 1.6, 13-Apr-05 3

SL02 / 03 / 04 Vishay Semiconductors Package Dimensions in mm (Inches) 0.85(0.033) 0.35(0.014) 3.9(0.152) 3.5(0.137) 5 0.16(0.006) 0.99(0.039) 0.97(0.038) Z 5 CathodeBand DetailZ enlarged TopView 1.9(0.074) 1.2(0.047) 1.7(0.066) 0.8(0.031) 0.10max 2.9(0.113) 2.7(0.105) ISOMethodE MountingPadLayout 1.6(0.062) 1.3(0.051) 1.4(0.055) 17247 www.vishay.com Document Number 85687 4 Rev. 1.6, 13-Apr-05

SL02 / 03 / 04 Vishay Semiconductors Blistertape for SMF PS 18513 Document Number 85687 www.vishay.com Rev. 1.6, 13-Apr-05 5

SL02 / 03 / 04 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com Document Number 85687 6 Rev. 1.6, 13-Apr-05

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1

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