New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY • PowerPAIR Optimizes High-Side and Low-Side VDS (V) RDS(on) () ID (A)a Qg (Typ.) MOSFETs for Synchronous Buck Converters 0.0240 at VGS = 10 V 11 (cid:129) TrenchFET® Power Mosfets Channel-1 30 3.5 nC 0.0320 at VGS = 4.5 V 11 (cid:129) 100 % Rg and UIS Tested 0.0110 at VGS = 10 V 28 (cid:129) Material categorization: For definitions of Channel-2 30 6.8 nC compliance please see www.vishay.com/doc?99912 0.0165 at VGS = 4.5 V 28 APPLICATIONS (cid:129) Computing System Power PowerPAIR® 3 x 3 (cid:129) POL Pin 1 (cid:129) Synchronous Buck Converter G 1 D 3 1 m m 1 D1 D1 2 D 1 D1 3 S/D 4 8 1 2 G1 G (Pin 9) 2 7 N-Channel 1 S2 6 MOSFET S1/D2 S2 5 3 m m S 2 G2 N-Channel 2 Ordering Information: MOSFET SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 TC = 25 °C 11a 28a Continuous Drain Current (TJ = 150 °C) TTCA == 2750 °°CC ID 91.81ba, c 142.89ab, c TA = 70 °C 7.8b, c 11.9b, c A Pulsed Drain Current (t = 300 µs) IDM 30 40 Continuous Source Drain Diode Current TA = 25 °C IS 11a 26 TA = 25 °C 3.2b, c 3.8b, c Avalanche Current IAS 12 15 L = 0.1 mH Single Pulse Avalanche Energy EAS 7 11 mJ T = 25 °C 16.7 31 C T = 70 °C 10.7 20 Maximum Power Dissipation TCA = 25 °C PD 3.7b, c 4.2b, c W TA = 70 °C 2.4b, c 2.7b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 Notes: a.Package limited. b.Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d.See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 67715 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1361-Rev. D, 11-Jun-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambienta, b t  10 s RthJA 27 34 24 30 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 6 7.5 3.2 4 Notes: a.Surface mounted on 1" x 1" FR4 board. b.Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2. SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V = 0, I = 250 µA Ch-1 30 Drain-Source Breakdown Voltage VDS GS D V V = 0 V, I = 250 µA Ch-2 30 GS D I = 250 µA Ch-1 24 V Temperature Coefficient V /T D DS DS J I = 250 µA Ch-2 30 D mV/°C I = 250 µA Ch-1 - 4.1 V Temperature Coefficient V /T D GS(th) GS(th) J I = 250 µA Ch-2 - 5 D V = V , I = 250 µA Ch-1 1 2.4 Gate Threshold Voltage VGS(th) DS GS D V V = V , I = 250 µA Ch-2 1 2.2 DS GS D Ch-1 ± 100 Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V nA Ch-2 ± 100 V = 30 V, V = 0 V Ch-1 1 DS GS V = 30 V, V = 0 V Ch-2 1 Zero Gate Voltage Drain Current IDSS DS GS µA V = 30 V, V = 0 V, T = 55 °C Ch-1 5 DS GS J V = 30 V, V = 0 V, T = 55 °C Ch-2 5 DS GS J V 5 V, V = 10 V Ch-1 10 On-State Drain Currentb ID(on) DS GS A V 5 V, V = 10 V Ch-2 10 DS GS V = 10 V, I = 9.8 A Ch-1 0.0200 0.0240 GS D V = 10 V, I = 15 A Ch-2 0.0090 0.0110 Drain-Source On-State Resistanceb RDS(on) GS D  V = 4.5 V, I = 8.5 A Ch-1 0.0265 0.0320 GS D V = 4.5 V, I = 12 A Ch-2 0.0135 0.0165 GS D V = 15 V, I = 9.8 A Ch-1 30 Forward Transconductanceb gfs DS D S V = 15 V, I = 15 A Ch-2 30 DS D Dynamica Ch-1 400 Input Capacitance Ciss Channel-1 Ch-2 730 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 125 Output Capacitance Coss pF Ch-2 155 Channel-2 V = 15 V, V = 0 V, f = 1 MHz Ch-1 25 Reverse Transfer Capacitance Crss DS GS Ch-2 65 V = 15 V, V = 10 V, I = 9.8 A Ch-1 7.4 12 DS GS D V = 15 V, V = 10 V, I = 15 A Ch-2 14.2 22 Total Gate Charge Qg DS GS D Ch-1 3.5 5.3 Channel-1 Ch-2 6.8 11 V = 15 V, V = 4.5 V, I = 9.8 A nC DS GS D Ch-1 1.5 Gate-Source Charge Qgs Ch-2 2.2 Channel-2 V = 15 V, V = 4.5 V, I = 15 A Ch-1 1.1 Gate-Drain Charge Qgd DS GS D Ch-2 2.3 Ch-1 0.5 2.6 5.2 Gate Resistance Rg f = 1 MHz  Ch-2 0.5 2.6 5.2 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 2 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica Ch-1 25 50 Turn-On Delay Time td(on) Channel-1 Ch-2 25 50 V = 15 V, R = 1.9  DD L Ch-1 45 90 Rise Time tr ID  8 A, VGEN = 4.5 V, Rg = 1  Ch-2 80 160 Ch-1 10 20 Turn-Off Delay Time td(off) Channel-2 V = 15 V, R = 1.5  Ch-2 20 40 DD L I  10 A, V = 4.5 V, R = 1  Ch-1 10 20 Fall Time tf D GEN g Ch-2 40 80 ns Ch-1 5 10 Turn-On Delay Time td(on) Channel-1 Ch-2 5 10 V = 15 V, R = 1.9  DD L Ch-1 10 20 Rise Time tr ID  8 A, VGEN = 10 V, Rg = 1  Ch-2 20 40 Ch-1 10 20 Turn-Off Delay Time td(off) Channel-2 V = 15 V, R = 1.5  Ch-2 15 30 DD L I  10 A, V = 10 V, R = 1  Ch-1 7 15 Fall Time tf D GEN g Ch-2 10 20 Drain-Source Body Diode Characteristics Ch-1 11 Continuous Source-Drain Diode Current IS TC = 25 °C Ch-2 26 A Ch-1 30 Pulse Diode Forward Currenta ISM Ch-2 40 IS = 8 A, VGS = 0 V Ch-1 0.84 1.2 Body Diode Voltage VSD V IS = 10 A, VGS = 0 V Ch-2 0.82 1.2 Ch-1 17 35 Body Diode Reverse Recovery Time trr ns Ch-2 20 40 Channel-1 Ch-1 9 20 Body Diode Reverse Recovery Charge Qrr IF = 8 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-2 14 30 nC Ch-1 9.5 Reverse Recovery Fall Time ta Channel-2 I = 10 A, dI/dt = 100 A/µs, T = 25 °C Ch-2 12.5 F J ns Ch-1 7.5 Reverse Recovery Rise Time tb Ch-2 7.5 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67715 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1361-Rev. D, 11-Jun-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 30 20 25 16 V = 10 V thru 4 V -Drain Current (A)D 112050 GS -Drain Current (A) 128 TC= 25 °C I D I T = 125 °C 4 C 5 VGS= 3 V T = -55 °C C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 600 500 0.04 Ω) ce ( V = 4.5 V pF) 400 Ciss an 0.03 GS e ( Resist citanc 300 n- pa O 0.02 a - C RDS(on) VGS= 10 V C - 200 Coss 0.01 100 C rss 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID-Drain Current (A) VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 V = 10 V age (V) 8 ID= 11 A VDS= 15 V malized) 1.4 ID= 9.8 A GS e Volt 6 e(Nor 1.2 VGS= 4.5 V Gate-to-Sourc 4 VDS= 7.5 V VDS= 24 V On-Resistanc 1.0 V-GS 2 -DS(on) 0.8 R 0 0.6 0 2 4 6 8 -50 -25 0 25 50 75 100 125 150 Qg-Total Gate Charge (nC) TJ-Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 4 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 0.06 0.05 TJ= 150 °C Ω) ID= 9.8 A nt (A) 10 nce ( 0.04 e Curre Resista 0.03 TJ= 125 °C ourc T = 25 °C On- I-SS 1 J -DS(on) 0.02 T = 25 °C R J 0.01 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V -Source-to-Drain Voltage (V) V -Gate-to-Source Voltage (V) SD GS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 V) 2.0 W) 30 V(GS(th) 1.8 I = 250 μA Power ( 20 D 1.6 10 1.4 0 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T -Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power 100 Limited by R * DS(on) 10 100 μs A) nt ( e 1 ms urr C 1 n 10 ms ai Dr 100 ms -D 1 s I 0.1 10 s TA= 25 °C DC Single Pulse BVDSS Limited 0.01 0.1 1 10 100 V -Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient Document Number: 67715 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1361-Rev. D, 11-Jun-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 25 20 20 16 A) ent ( 15 W) 12 Curr Package Limited er ( Drain 10 Pow 8 - D I 5 4 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC-Case Temperature (°C) TC-Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 6 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 Duty Cycle = 0.5 nt e si Trannce 0.2 Notes: ective mpeda 0.1 PDM d Effmal I 0.1 0.05 t1 malizeTher 0.02 1.DutyCyclet,2D= tt12 or 2.PerUnitBase=RthJA=69 °C/W N 3.TJM-TA=PDMZthJA(t) Single Pulse 4.SurfaceMounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e si Trannce ective mpeda 0.2 d Effmal I alizeTher 0.1 m or 0.05 N 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 67715 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1361-Rev. D, 11-Jun-12 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 40 20 35 V = 10 V thru 4 V GS 16 30 ent (A) 25 nt (A) 12 -Drain Curr 1250 VGS= 3 V Drain Curre 8 TC= 25 °C D - I D 10 I T = 125 °C 4 C 5 T = -55 °C C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.025 1000 0.020 800 Ω) stance ( 0.015 VGS= 4.5 V ce (pF) 600 Ciss On-Resi 0.010 apacitan 400 - C RDS(on) VGS= 10 V C - Coss 0.005 200 C rss 0 0 0 10 20 30 40 0 5 10 15 20 25 30 ID-Drain Current (A) VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 V) 8 ID= 11 A VDS= 15 V zed) 1.6 ID= 15 A VGS= 10 V ge ( mali olta Nor 1.4 VGS= 4.5 V V 6 ( ate-to-Source 4 VDS= 7.5 V VDS= 24 V On-Resistance 11..02 G - V-GS 2 RDS(on) 0.8 0 0.6 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 Q -Total Gate Charge (nC) T -Junction Temperature (°C) g J Gate Charge On-Resistance vs. Junction Temperature www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 8 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 0.05 T = 150 °C 0.04 ID= 15 A J Ω) ent (A) 10 ance ( 0.03 e Curr Resist I-SourcS 1 TJ= 25 °C -On-DS(on) 0.02 TJ= 125 °C R 0.01 T = 25 °C J 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V -Source-to-Drain Voltage (V) V -Gate-to-Source Voltage (V) SD GS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 V) 1.6 W) 30 V(GS(th) 1.4 I = 250 μA Power ( 20 D 1.2 10 1.0 0 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ-Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by R * DS(on) 10 100 μs A) nt ( 1 ms e urr C 1 10 ms n ai Dr 100 ms - 1 s D I 0.1 10 s TA= 25 °C DC Single Pulse BVDSS Limited 0.01 0.1 1 10 100 V -Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient Document Number: 67715 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1361-Rev. D, 11-Jun-12 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 50 40 40 30 A) Current ( 30 Package Limited er (W) 20 Drain 20 Pow - D I 10 10 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC-Case Temperature (°C) TC-Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 10 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 Duty Cycle = 0.5 nt e si Trannce 0.2 d Effective mal Impeda 0.1 00..015 NPoDteMs: malizeTher 0.02 1.DutyCyt1clet,2D= t1 Nor 2.PerUnitBase=RthtJ2A=64 °C/W Single Pulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e si Trannce ective mpeda 0.2 d Effmal I 0.1 malizeTher 0.05 or N Single Pulse 0.02 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67715. Document Number: 67715 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1361-Rev. D, 11-Jun-12 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D A K2 D2 K2 d 0.10 C A1 8 7 6 5 5 6 7 8 2X L K 1 9 E E 1 K * E2 d 0.10 C 1 2 3 4 0.15 4 3 2 1 2X 0.10 e b b1 f 0.10 C Note * Indicates pin #1 orientation (optional) A C c d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 0.002 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. 0.012 typ. L 0.27 0.32 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 0.450 (0.018) (0.026) (0.018) 0.209 (0.008) 2.450 (0.096) 6 1) 3 4 0 0 0.084 1. (0. (0.003) 0.306 0.390 (0.012) (0.015) 2 2) 1.611 0.063) 0.56 (0.02 ( 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 www.vishay.com Revision: 25-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose o r the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk . Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this documen t or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000