SiT9120 Standard Frequency Differential Oscillator Features Applications  31 standard frequencies from 25 MHz to 212.5 MHz  10GB Ethernet, SONET, SATA, SAS, Fibre Channel,  LVPECL and LVDS output signaling types PCI-Express  0.6 ps RMS phase jitter (random) over 12 kHz  Telecom, networking, instrumentation, storage, server to 20 MHz bandwidth  Frequency stability as low as ±10 ppm  Industrial and extended commercial temperature ranges  Industry-standard packages: 3.2 x 2.5, 5.0 x 3.2 and 7.0 x 5.0 mm x mm  For any other frequencies between 1 to 625 MHz, refer to SiT9121 and SiT9122 datasheet Electrical Characteristics Table 1. Electrical Characteristics Parameters Symbol Min. Typ. Max. Unit Condition LVPECL and LVDS, Common Electrical Characteristics Supply Voltage Vdd 2.97 3.3 3.63 V 2.25 2.5 2.75 V 2.25 – 3.63 V Termination schemes in Figures 1 and 2 - XX ordering code Output Frequency Range f 25 – 212.5 MHz See list of standard frequencies Frequency Stability F_stab -10 – +10 ppm Inclusive of initial tolerance, operating temperature, -20 – +20 ppm rated power supply voltage, and load variations -25 – +25 ppm -50 – +50 ppm First Year Aging F_aging1 -2 – +2 ppm 25°C 10-year Aging F_aging10 -5 – +5 ppm 25°C Operating Temperature Range T_use -40 – +85 °C Industrial -20 – +70 °C Extended Commercial Input Voltage High VIH 70% – – Vdd Pin 1, OE orST Input Voltage Low VIL – – 30% Vdd Pin 1, OE orST Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, orSTlogic high 2 – – MΩ Pin 1,STlogic low Start-up Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value. Resume Time T_resume – 6 10 ms In Standby mode, measured from the timeSTpin crosses 50% threshold. Duty Cycle DC 45 – 55 % Contact SiTime for tighter duty cycle LVPECL, DC and AC Characteristics Current Consumption Idd – 61 69 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V OE Disable Supply Current I_OE – – 35 mA OE = Low Output Disable Leakage Current I_leak – – 1 A OE = Low Standby Current I_std – – 100 A ST= Low, for all Vdds Maximum Output Current I_driver – – 30 mA Maximum average current drawn from OUT+ or OUT- Output High Voltage VOH Vdd-1.1 – Vdd-0.7 V See Figure 1(a) Output Low Voltage VOL Vdd-1.9 – Vdd-1.5 V See Figure 1(a) Output Differential Voltage Swing V_Swing 1.2 1.6 2.0 V See Figure 1(b) Rise/Fall Time Tr, Tf – 300 500 ps 20% to 80%, see Figure 1(a) OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds Rev 1.08 June 25, 2019 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Table 1. Electrical Characteristics (continued) Parameter Symbol Min. Typ. Max. Unit Condition LVDS, DC and AC Characteristics Current Consumption Idd – 47 55 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V OE Disable Supply Current I_OE – – 35 mA OE = Low Differential Output Voltage VOD 250 350 450 mV See Figure 2 Output Disable Leakage Current I_leak – – 1 A OE = Low Standby Current I_std – – 100 A ST= Low, for all Vdds VOD Magnitude Change VOD – – 50 mV See Figure 2 Offset Voltage VOS 1.125 1.2 1.375 V See Figure 2 VOS Magnitude Change VOS – – 50 mV See Figure 2 Rise/Fall Time Tr, Tf – 495 600 ps 20% to 80%, see Figure 2 OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds Table 2. Pin Description Pin Map Functionality Top View No Connect; Leave it floating or connect to GND NC NA for better heat dissipation H or Open: specified frequency output NC/OE/ST 1 6 VDD 1 OE Input L: output is high impedance ST Input HL: oDre Ovipceen g:o sepse tcoif sielede fpre mquoednec. yS ouuptpplyu tc urrent reduces to I_std. NC 2 5 OUT- No Connect; Leave it floating or connect to GND for better heat 2 NC NA dissipation GND 3 4 OUT+ 3 GND Power VDD Power Supply Ground 4 OUT+ Output Oscillator output Figure 1. Pin Assignments 5 OUT- Output Complementary oscillator output 6 VDD Power Power supply voltage Rev 1.08 Page 2 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 °C VDD -0.5 4 V Electrostatic Discharge (HBM) – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Table 4. Thermal Consideration[1] Package JA, 4 Layer Board (°C/W) JC, Bottom (°C/W) 7050, 6-pin 142 27 5032, 6-pin 97 20 3225, 6-pin 109 20 Note: 1. Refer to JESD51-7 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[2] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 70°C 90°C 85°C 105°C Note: 2. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev 1.08 Page 3 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Waveform Diagrams OUT- 80% 80% 20% 20% VOH OUT+ VOL Tr Tf GND Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-) V_Swing 0 V t Figure 1(b). LVPECL Voltage Levels Across Differential Pair OUT- 80% 80% VOD 20% 20% OUT+ VOS Tr Tf GND Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-) Rev 1.08 Page 4 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Termination Diagrams LVPECL VDD OUT+ Z0 = 50  D+ LVPECL Driver Receiver Device OUT- Z0 = 50  D- 50  50  VTT = VDD – 2.0 V Figure 3. LVPECL Typical Termination VDD VDD= 3.3V => R1 = 100 to 150  VDD= 2.5V => R1 = 75  100 nF OUT+ Z0 = 50  D+ LVPECL Driver Receiver Device 100 nF OUT- Z0 = 50  D- R1 R1 50  50  VTT Figure 4. LVPECL AC Coupled Termination VDD = 3.3V => R1 = R3 = 133  and R2 = R4 = 82  VDD VDD = 2.5V => R1 = R3 = 250  and R2 = R4 = 62.5  R1 R3 VDD OUT+ Z0 = 50  D+ LVPECL Driver Receiver Device OUT- Z0 = 50  D- R2 R4 Figure 5. LVPECL with Thevenin Typical Termination Rev 1.08 Page 5 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Termination Diagrams (continued) LVDS VDD OUT+ Z0 = 50  D+ LVDS Driver 100  Receiver Device OUT- Z0 = 50  D- Figure 6. LVDS Single Termination (Load Terminated) Rev 1.08 Page 6 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Dimensions and Patterns Package Size – Dimensions (Unit: mm)[3] Recommended Land Pattern (Unit: mm)[4] 3.2 x 2.5 x 0.75 mm 3.2±0.05 2.20 2.25 #6 #5 #4 #4 #5 #6 5 0 Y XXXX ±0. 0.9 1.6 5 YXXXX 2. 0.7 1.00 #1 #2 #3 #3 #2 #1 0.6 0.65 1.05 0.75±0.05 5.0 x 3.2 x 0.75 mm 5.0±0.10 2.54 #6 #5 #4 #4 #5 #6 0 1 2±0. 1.20 YXXXX 3. YXXXX 0.90 #1 #2 #3 #3 #2 #1 0.64 0.75±0.05 7.0 x 5.0x 0.90 mm 7.0±0.10 5.08 5.08 #6 #5 #4 #4 #5 #6 Y XXXX 5.0±0.10 2.60 1.10 3.80 YXXXX #1 #2 #3 #3 #2 #1 1.60 1.40 0.90 ±0.10 1.60 Notes: 3. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 4. A capacitor of value 0.1 F between Vdd and GND is recommended. Rev 1.08 Page 7 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Ordering Information SiT9120AC -1C2-33E125.000000T Packaging: Part Family “T”, “Y”, “X”, “D”, “E”, or “G” “SiT9120” Refer to table below for packing method Leave Blank for Bulk Revision Letter Frequency “A” is the revision of Silicon See Supported Frequency list below Temperature Range “I” Industrial, -40 to 85°C Feature Pin “N” for No Connect “C” Extended Commercial, -20 to 70°C “E” for Output Enable “S” for Standby Signalling Type Voltage Supply “1” = LVPECL “2” = LVDS “25” for 2.5V ±10% “33” for 3.3V ±10% “XX” for 2.25V to 3.63V Package Size “B” 3.2 x 2.5 mm x mm Frequency Stability “C” 5.0 x 3.2 mm x mm “F” for ±10 ppm “D” 7.0 x 5.0 mm x mm “1” for ±20 ppm “2” for ±25 ppm “3” for ±50 ppm Table 7. List of Supported Frequencies 25.000000 MHz 50.000000 MHz 74.175824 MHz 74.250000 MHz 75.000000 MHz 98.304000 MHz 100.000000 MHz 106.250000 MHz 125.000000 MHz 133.000000 MHz 133.300000 MHz 133.330000 MHz 133.333000 MHz 133.333300 MHz 133.333330 MHz 133.333333 MHz 148.351648 MHz 148.500000 MHz 150.000000 MHz 155.520000 MHz 156.250000 MHz 161.132800 MHz 166.000000 MHz 166.600000 MHz 166.660000 MHz 166.666000 MHz 166.666600 MHz 166.666660 MHz 166.666666 MHz 200.000000 MHz 212.500000 MHz Table 8. Ordering Codes for Supported Tape & Reel Packing Method Device Size 8 mm T&R 8 mm T&R 8 mm T&R 12 mm T&R 12 mm T&R 12 mm T&R 16 mm T&R 16 mm T&R 16 mm T&R (3ku) (1ku) (250u) (3ku) (1ku) (250u) (3ku) (1ku) (250u) 7.0 x 5.0 mm – – – – – – T Y X 5.0 x 3.2 mm – – – T Y X – – – 3.2 x 2.5 mm D E G T Y X – – – Rev 1.08 Page 8 of 13 www.sitime.com

S iT9120 Standard Frequency Differential Oscillator Table 9. Revision History Revisions Release Date Change Summary 1.01 02/20/2013 Original 1.02 11/23/2013 Added input specifications, LVPECL/LVDS waveforms, packaging T&R options 1.03 02/06/2014 Added 8mm T&R option 1.04 03/03/2014 Added ±10 ppm 1.05 07/23/2014 Include Thermal Consideration Table 1.06 10/03/2014 Modified Thermal Consideration values 1.07 01/09/2017 Included Maximum Operating Junction Temperature Table Added Thermal Consideration Notes to Table Updated logo and company address, other page layout changes 1.08 06/25/2019 Added No Connect feature to Pin 1 SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 © SiTime Corporation 2013-2019. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev 1.08 Page 9 of 13 www.sitime.com

Silicon MEMS Outperforms Quartz Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. Rev 1.08 Page 10 of 13 www.sitime.com

Silicon MEMS Outperforms Quartz Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz SiTime’s oscillators in plastic packages are up to 54 times suppliers, SiTime has in-house MEMS and analog CMOS more immune to external electromagnetic fields than quartz expertise, which allows SiTime to develop the most reliable oscillators as shown in Figure 3. products. Figure 1 shows a comparison with quartz Why is SiTime Best in Class: technology. Why is SiTime Best in Class:  Internal differential architecture for best common mode noise rejection  SiTime’s MEMS resonators are vacuum sealed  Electrostatically driven MEMS resonator is more using an advanced EpiSeal™ process, which immune to EMS eliminates foreign particles and improves long term aging and reliability  World-class MEMS and CMOS design expertise Reliability (Million Hours) SiTime 1,140 IDT 38 KYCA EPSN TXC CW SLAB SiTime EPSN 28 Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Power Supply Noise Rejection Figure 1. Reliability Comparison[1] SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. Best Aging Unlike quartz, MEMS oscillators have excellent long Why is SiTime Best in Class: term aging performance which is why every new SiTime  On-chip regulators and internal differential product specifies 10-year aging. A comparison is shown architecture for common mode noise rejection in Figure 2.  MEMS resonator is paired with advanced analog Why is SiTime Best in Class: CMOS IC  SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which SiTime EPSN KYCA eliminates foreign particles and improves long term aging and reliability  Inherently better immunity of electrostatically driven MEMS resonator MEMS vs. Quartz Aging ESpiTiSiemael M OEsMcSill aOtsocrillator QQuuaartrzt zO Oscsilclaitlolartor 10 8 8 M) PP 6 ng (
4 3.5 Figure 4. Power Supp ly Noise Rejection[4] gi 3 A 2 1.5 0 1-Year 10-Year Figure 2. Aging Comparison[2] Rev 1.08 Page 11 of 13 www.sitime.com

Silicon MEMS Outperforms Quartz Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All SiTime’s oscillators can withstand at least 50,000 g shock. electronics, from handheld devices to enterprise servers They all maintain their electrical performance in operation and storage systems are subject to vibration. Figure 5 during shock events. A comparison with quartz devices is shows a comparison of vibration robustness. shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class:  The moving mass of SiTime’s MEMS resonators is  The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz up to 3000 times smaller than quartz  Center-anchored MEMS resonator is the most  Center-anchored MEMS resonator is the most robust design robust design TTXXCC EEPPSS CCWW KKYYCCAA SSLLAABB ESpiTiSimeael MEMS 100.0 g) b/ p p 10.0 y ( vit siti 1.0 n e S n 0.1 o ati br Vi 0.0 10 100 1000 Vibration Frequency (Hz) KYCA EPSN TXC CW SLAB SiTime Figure 5. Vibration Robustness[5] Figure 6. Shock Robustness[6] Figure labels:  TXC = TXC  Epson = EPSN  Connor Winfield = CW  Kyocera = KYCA  SiLabs = SLAB  SiTime = EpiSeal MEMS Rev 1.08 Page 12 of 13 www.sitime.com

Silicon MEMS Outperforms Quartz Notes: 1. Data source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS):  According to IEC EN61000-4.3 (Electromagnetic compatibility standard)  Field strength: 3V/m  Radiated signal modulation: AM 1 kHz at 80% depth  Carrier frequency scan: 80 MHz – 1 GHz in 1% steps  Antenna polarization: Vertical  DUT position: Center aligned to antenna Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone CW Conner Winfield P123-156.25M Quartz, 3rd Overtone KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL NDK NDK NZ2523SB-25.6M Quartz KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz EPSN Epson SG-310SCF-25M0-MB3 Quartz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test:  MIL-STD-883F Method 2002  Condition A: half sine wave shock pulse, 500-g, 1ms  Continuous frequency measurement in 100 μs gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3. 7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com. Rev 1.08 Page 13 of 13 www.sitime.com