SiP32454, SiP32455 Vishay Siliconix Ω 0.8 V to 2.5 V, 28 m , Slew Rate Controlled Load Switch in WCSP4 DESCRIPTION FEATURES The SiP32454 and SiP32455 are slew rate controlled (cid:129) Low input voltage, 0.8 V to 2.5 V integrated high side load switches that operate in the input (cid:129) Low R , 28 mΩ typical ON voltage range from 0.8 V to 2.5 V. The SiP32454 and (cid:129) Slew rate control SiP32455 are of N-channel MOSFET switching elements (cid:129) Low logic control with hysteresis that provide 28 mΩ switch on resistance. They have a 1 ms at 1.2 V and 1.5 ms at 2.5 V slow slew rate that limits the (cid:129) Reverse current blocking when disabled in-rush current and minimizes the switching noise. These (cid:129) Integrated output discharge switch for SiP32454 devices’ low voltage logic control threshold can interface with (cid:129) Integrated pull down resistor at EN pin low voltage control I/O directly without extra level shift or (cid:129) 4 bump WCSP 0.8 mm x 0.8 mm with 0.4 mm pitch driver. A 2 MΩ pull-down resistor is integrated at logic control package EN pin. SiP32454 integrates a switch OFF output discharge (cid:129) Material categorization: For definitions of compliance circuit. please see www.vishay.com/doc?9991 Both SiP32454 and SiP32455 are available in compact wafer level CSP package, WCSP4 0.8 mm x 0.8 mm with 0.4 mm APPLICATIONS pitch. (cid:129) Battery operated devices (cid:129) Smart phones (cid:129) GPS and PMP (cid:129) Computer (cid:129) Medical and healthcare equipment (cid:129) Industrial and instrument (cid:129) Cellular phones and portable media players (cid:129) Game console TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32454, SiP32455 CIN COUT EN EN GND GND GND Figure 1 - SiP32454 and SiP32455 Typical Application Circuit Document Number: 62531 For technical questions, contact: powerictechsupport@vishay.com www.vishay.com S12-0967-Rev. A, 07-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix ORDERING INFORMATION Temperature Range Package Marking Part Number WCSP: 4 Bumps AD SiP32454DB-T2-GE1 (2 x 2, 0.4 mm pitch, - 40 °C to 85 °C 208 µm bump height, AE SiP32455DB-T2-GE1 0.8 mm x 0.8 mm die size) Note: GE1 denotes halogen-free and RoHS compliant ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Supply Input Voltage (V ) - 0.3 to 2.75 IN Enable Input Voltage (V ) - 0.3 to 2.75 V EN Output Voltage (V ) - 0.3 to 2.75 OUT Maximum Continuous Switch Current (I ) 1.2 max. A Maximum Pulsed Current (I ) V (Pulsed at 1 ms, 10 % Duty Cycle) 2 DM IN ESD Rating (HBM) 4000 V Junction Temperature (T ) - 40 to 150 °C J Thermal Resistance (θ )a 280 °C/W JA Power Dissipation (P )a 196 mW D Notes: a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 3.6 mW/°C above T = 70 °C. A Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Limit Unit Input Voltage Range (V ) 0.8 to 2.5 V IN Operating Junction Temperature Range - 40 to 125 °C www.vishay.com For technical questions, contact: powerictechsupport@vishay.com Document Number: 62531 2 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix SPECIFICATIONS Test Conditions Unless Specified Limits V = 1 V, T = - 40 °C to 85 °C Parameter Symbol IN A Unit (Typical values are at TA = 25 °C) Min.a Typ.b Max.a Operating Voltagec VIN 0.8 - 2.5 V VIN = 1.2 V, VEN = VIN, OUT = open - 10 15 Quiescent Current IQ VIN = 2.5 V, VEN = VIN, OUT = open - 34 60 SiP32454 - - 30 Off Supply Current IQ(off) EN = GND, OUT = open µA SiP32455 - - 1 Off Switch Current IDS(off) EN = GND, OUT = 0 V - - 30 Reverse Blocking Current IRB VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V - 0.001 30 VIN = 1 V, IL = 200 mA, TA = 25 °C - 30 35 On-Resistance RDS(on) VIN = 1.2 V, IL = 200 mA, TA = 25 °C - 29 35 mΩ VIN = 1.8 V, IL = 200 mA, TA = 25 °C - 28 35 VIN = 2.5 V, IL = 200 mA, TA = 25 °C - 28 35 On-Resistance Temp.-Coefficient TCRDS - 4100 - ppm/°C Output Pulldown Resistance RPD VEN = 0 V, TA = 25 °C (SiP32454 only) - 417 550 Ω EN Input Low Voltagec VIL VIN = 1 V - - 0.1 V EN Input High Voltagec VIH VIN = 2.5 V 1.5 - - VIN = 2.5 V, VEN = 0 V - - 1 EN Input Leakage IEN µA VIN = 2.5 V, VEN = 2.5 V - 6.5 12 VIN = 1.2 V - 0.6 1.2 Output Turn-On Delay Time td(on) VIN = 2.5 V - 0.6 1.2 ms Output Turn-On Rise Time tr VVIINN == 12..25 VV RLOAD =T 1A0 = Ω 2, 5C °LC = 0.1 µF, 00..45 11.5 12..65 VIN = 1.2 V - 0.3 1 Output Turn-Off Delay Time td(off) µs VIN = 2.5 V - 0.1 1 Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For V outside this range consult typical EN threshold curve. IN Document Number: 62531 For technical questions, contact: powerictechsupport@vishay.com www.vishay.com S12-0967-Rev. A, 07-May-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix PIN CONFIGURATION Index-Bump A1 1 2 2 1 OUT IN IN OUT A W A B A D B GND EN EN GND Backside Bumpside Figure 2 - WCSP 2 x 2 Package PIN DESCRIPTION Pin Number Name Function A1 OUT This is the output pin of the switch A2 IN This is the input pin of the switch B1 GND Ground connection B2 EN Enable input BLOCK DIAGRAM IN OUT EN Control Charge Turn ON Logic Pump Slew Rate Control GND For SiP32454 only Figure 3 - Functional Block Diagram www.vishay.com For technical questions, contact: powerictechsupport@vishay.com Document Number: 62531 4 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 45 45 40 40 Current (μA) 233505 Current (μA) 233505 VIN = 2.5 V uiescent 1250 uiescent 1250 Q Q I - Q 10 I - Q 10 VIN = 1.2 V 5 5 V = 1 V IN 0 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 V (V) Temperature (°C) IN Quiescent vs. Input Voltage Quiescent vs. Temperature 1400 100 000 SiP32454 SiP32454 Current (nA) 11020000 Current (nA) 101 000000 VIN = 1.2 V VIN = 2.5 V Off Supply 800 Off Supply 100 I - Q(OFF) 600 I - IQ(OFF) 10 VIN = 1 V 400 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 V (V) Temperature (°C) IN Off Supply Current vs. Input Voltage Off Supply Current vs. Temperature 12 1000 SiP32455 SiP32455 Current (nA) 108 Current (nA) 10100 VIN = 1.2 V VIN = 2.5 V I - Off Supply Q(OFF) 246 I - Off Supply IQ(OFF)0.00.111 VIN = 1 V 0 0.001 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 V (V) Temperature (°C) IN Off Supply Current vs. Input Voltage Off Supply Current vs. Temperature Document Number: 62531 For technical questions, contact: powerictechsupport@vishay.com www.vishay.com S12-0967-Rev. A, 07-May-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1600 100 000 1400 V = 5 V Current (nA) 11020000 Current (nA) 101 000000 VIN = 3.6 V IN witch witch Off S 800 Off S 100 I - DS(off) 600 I - DS(off) 10 VIN = 1.2 V 400 200 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 V (V) Temperature (°C) IN Off Switch Current vs. Input Voltage Off Switch Current vs. Temperature 35 36 34 34 IVO = = 0 1.2.2 A V IN 33 Ω) 32 mΩ) 32 R - On-Resistance (mDS 2223378901 IO = I0O .=5 A1. 2 A R - On-Resistance (DS 22234680 26 IO = 0.2 A 22 25 20 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) On Resistance vs. Input Voltage On Resistance vs. Temperature 4.0 160 3.8 140 VVOU =T =0 .29. 5V V V = 0.9 V IN 3.6 IN A) 120 Current (nA) 333...024 ut Current (n10800 ut np - InpN 22..68 I - IIN 60 II 40 2.4 20 2.2 2.0 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 VOUT (V) Temperature (°C) Reverse Blocking Current vs. Output Voltage Reverse Blocking Current vs. Temperature www.vishay.com For technical questions, contact: powerictechsupport@vishay.com Document Number: 62531 6 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 460 450 SiP32454 only SiP32454 only Ωe () 450 VOUT = VIN e (Ω) 440 VOUT = VIN = 2.5 V c c n n a a sist 440 sist 430 e e R R n n ow 430 ow 420 d d ull ull P P ut 420 ut 410 p p ut ut O O - D 410 - D400 RP RP 400 390 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Output Pulldown Resistance vs. Input Voltage Output Pulldown Resistance vs. Temperature 1.6 7 1.4 6 V = 2.5 V IN e (V) 1.2 A) 5 oltag 1 VIH nt (μ 4 V e old 0.8 Curr N Thresh 0.6 VIL I, EN EN 23 E 0.4 0.2 1 0 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.0 0.5 1.0 1.5 2.0 2.5 V (V) V (V) IN EN EN Threshold Voltage vs. Input Voltage EN Input Leakage vs.V EN 1 2.50 0.9 V = 2.5 V 2.25 VIN = 2.5 V IN C = 0.1 μF ms) 0.8 CRL == 100.1 Ω μ F 2.00 RLL = 10 Ω elay Time ( 00..67 L me (ms) 11..5705 On D 0.5 se Ti 1.25 t - Turn-d(on) 000...234 t - Rir001...570050 0.1 0.25 0 0.00 - 40 - 20 0 20 40 60 80 100 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Turn-On Delay Time vs. Temperature Rise Time vs. Temperature Document Number: 62531 For technical questions, contact: powerictechsupport@vishay.com www.vishay.com S12-0967-Rev. A, 07-May-12 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix ELECTRICAL CHARACTERISTICS 0.30 V = 2.5 V IN C = 0.1 μF 0.25 RL = 10 Ω s) L μ e ( m 0.20 Ti y a el D 0.15 Off n- Tur 0.10 t - d(off) 0.05 0.00 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Turn-Off Delay Time vs. Temperature TYPICAL WAVEFORMS Turn-On Time (V = 1.2 V) Turn-Off Time (V = 1.2 V) IN IN Turn-On Time (V = 2.5 V) Turn-Off Time (V = 2.5 V) IN IN www.vishay.com For technical questions, contact: powerictechsupport@vishay.com Document Number: 62531 8 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix DETAILED DESCRIPTION T (max.) - T 125 - T J A A SiP32454 and SiP32455 are n-channel power MOSFET P (max.) = = θ designed as high side load switch. Once enable the device J-A 280 charge pumps the gate of the power MOSFET to a constant It then follows that, assuming an ambient temperature of gate to source voltage for fast turn on time. The mostly 70 °C, the maximum power dissipation will be limited to about constant gate to source voltage keeps the on resistance low 196 mW. through out the input voltage range. SiP32454 and SiP32455 So long as the load current is below the 1.2 A limit, the are designed with slow slew rate to minimize the inrush maximum continuous switch current becomes a function two current during turn on. Because the body of the output things: the package power dissipation and the R at the n-channel is always connected to GND, it prevents the DS(ON) ambient temperature. current from going back to the input in case the output As an example let us calculate the worst case maximum load voltage is higher than the output. The SiP32454 especially current at T = 70 °C. The worst case R at 25 °C is incorporates an active output pulldown resistor to discharge A DS(ON) 35 mΩ. The R ) at 70 °C can be extrapolated from this output capacitance when the device is off. DS(ON data using the following formula: APPLICATION INFORMATION RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where T is 4100 ppm/°C. Continuing with the calculation Input Capacitor C we have While a bypass capacitor on the input is not required, R (at 70 °C) = 35 mΩ x (1 + 0.0041 x (70 °C - 25 °C)) a 4.7 µF or larger capacitor for C is recommended in almost DS(ON) IN = 42.2 mΩ all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in The maximum current limit is then determined by minimizing transients on the input. Ceramic capacitors are P (max.) recommended over tantalum because of their ability to I (max.)< withstand input current surges from low impedance sources LOAD R such as batteries in portable devices. DS( ON ) Output Capacitor which in this case is 2.1 A. Under the stated input voltage A 0.1 µF capacitor across VOUT and GND is recommended condition, if the 2.1 A current limit is exceeded the internal die to insure proper slew operation. There is inrush current temperature will rise and eventually, possibly damage the through the output MOSFET and the magnitude of the inrush device. current depends on the output capacitor, the bigger the COUT To avoid possible permanent damage to the device and keep the higher the inrush current. There are no ESR or capacitor a reasonable design margin, it is recommended to operate type requirement. the device maximum up to 1.2 A only as listed in the Enable Absolute Maximum Ratings table. The EN pin is compatible with CMOS logic voltage levels. It requires at least 0.1 V or below to fully shut down the device and 1.5 V or above to fully turn on the device. Protection Against Reverse Voltage Condition Both the SiP32454 and SiP32455 can block the output current from going to the input in case where the output voltage is higher than the input voltage when the main switch is off. Thermal Considerations These devices are designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of280 °C/W) the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, T = 125 °C, the junction-to-ambient thermal resistance, J(max.) θ = 280 °C/W, and the ambient temperature, T , which J-A A may be formulaically expressed as: Document Number: 62531 For technical questions, contact: powerictechsupport@vishay.com www.vishay.com S12-0967-Rev. A, 07-May-12 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiP32454, SiP32455 Vishay Siliconix PACKAGE OUTLINE WCSP: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height, 0.8 mm x 0.8 mm Die Size) Mark on backside of die Index-Bump A1 1 2 2 1 A W 0.4 4S oxl dØe r0 m.1a5s0k t od i0a..2 -0 P0ad diameter + 0.1 4 x Ø b A e D B A D B 0.4 e Recommended Land Pattern D All dimensions in millimeters A 1 A 3 ote Bump Note 2 N MILLIMETERS INCHES Dimension Min. Nom. MAX. Min. Nom. MAX. A 0.515 0.530 0.545 0.0202 0.0208 0.0214 A1 0.208 0.0081 b 0.250 0.260 0.270 0.0098 0.0102 0.0106 e 0.400 0.0157 D 0.720 0.760 0.800 0.0182 0.0193 0.0203 Notes: 1. Laser mark on the backside surface of die. 2. Bumps are SAC396. 3. 0.050 max. coplanarity. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62531 www.vishay.com For technical questions, contact: powerictechsupport@vishay.com Document Number: 62531 10 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps (2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size) Mark on backside of die Pin 1 mark 1 2 2 1 A W A 4 x Ø b e D A B B B e 4 x Ø 0.15 to Ø 0.20 D 0.4 Solder mask dia. - Pad diameter + 0.1 0.4 Recommended Land Pattern A 1 All dimensions in millimeters A 3 ote Bump Note 2 N DWG-No: 6004 Notes (1) Laser mark on the backside surface of die (2) Bumps are SAC396 (3) 0.05 max. coplanarity MILLIMETERS a INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.515 0.530 0.545 0.0202 0.0208 0.0214 A1 0.208 0.0081 b 0.250 0.260 0.270 0.0098 0.0102 0.0106 e 0.400 0.0157 D 0.720 0.760 0.800 0.0182 0.0193 0.0203 Note a. Use millimeters as the primary measurement. S14-0844-Rev. C, 28-Apr-14 1 Document Number: 63459 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SIP32454DB-T2-GE1 SIP32455DB-T2-GE1 SiP32455EVB SiP32454EVB