SiHP12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J • Low input capacitance (C ) R max. at 25 °C (Ω) V = 10 V 0.38 iss DS(on) GS • Reduced switching and conduction losses Q max. (nC) 58 g • Ultra low gate charge (Q ) Q (nC) 6 g gs • Avalanche energy rated (UIS) Available Q (nC) 13 gd • Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc?99912 APPLICATIONS D • Server and telecom power supplies TO-220AB • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting G - High-intensity discharge (HID) - Fluorescent ballast lighting S D • Industrial G S - Welding N-Channel MOSFET - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP12N60E-E3 Lead (Pb)-free and Halogen-free SiHP12N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V ± 30 GS T = 25 °C 12 C Continuous Drain Current (T = 150 °C) V at 10 V I J GS D T = 100 °C 7.8 A C Pulsed Drain Current a I 27 DM Linear Derating Factor 1.2 W/°C Single Pulse Avalanche Energy b E 117 mJ AS Maximum Power Dissipation P 147 W D Operating Junction and Storage Temperature Range T , T -55 to +150 °C J stg Drain-Source Voltage Slope T = 125 °C 70 J dV/dt V/ns Reverse Diode dV/dt d 5 Soldering Recommendations (Peak Temperature) c for 10 s 300 °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 °C, L = 11.6 mH, R = 25 Ω, I = 4.5 A. DD J g AS c. 1.6 mm from case. d. I ≤ I , dI/dt = 100 A/μs, starting T = 25 °C. SD D J S15-0277-Rev. D, 23-Feb-15 1 Document Number: 91479 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP12N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA °C/W Maximum Junction-to-Case (Drain) R - 0.85 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 600 - - V DS GS D VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.71 - V/°C Gate-Source Threshold Voltage (N) V V = V , I = 250 μA 2 - 4 V GS(th) DS GS D V = ± 20 V - - ± 100 nA GS Gate-Source Leakage I GSS V = ± 30 V - - ± 1 μA GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I μA DSS V = 480 V, V = 0 V, T = 125 °C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 6 A - 0.32 0.38 Ω DS(on) GS D Forward Transconductance g V = 40 V, I = 8 A - 3.8 - S fs DS D Dynamic Input Capacitance C - 937 - iss V = 0 V, GS Output Capacitance C V = 100 V, - 53 - oss DS f = 1 MHz Reverse Transfer Capacitance C - 5 - rss pF Effective Output Capacitance, Energy C - 41 - Related a o(er) V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 136 - Related b o(tr) Total Gate Charge Q - 29 58 g Gate-Source Charge Q V = 10 V I = 6 A, V = 480 V - 6 - nC gs GS D DS Gate-Drain Charge Q - 13 - gd Turn-On Delay Time t - 14 28 d(on) Rise Time t - 19 38 r VDD = 480 V, ID = 6 A, ns Turn-Off Delay Time td(off) VGS = 10 V, Rg = 9.1 Ω - 35 70 Fall Time t - 19 38 f Gate Input Resistance R f = 1 MHz, open drain - 1.1 - Ω g Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the D - - 12 integral reverse A G Pulsed Diode Forward Current ISM p - n junction diode S - - 48 Diode Forward Voltage V T = 25 °C, I = 6 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 350 - ns rr T = 25 °C, I = I = 6 A, Reverse Recovery Charge Q J F S - 4 - μC rr dI/dt = 100 A/μs, V = 25 V R Reverse Recovery Current I - 19 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0277-Rev. D, 23-Feb-15 2 Document Number: 91479 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP12N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 3 TOP15 V A) 14 V ID = 6 A nt ( 25 1132 VV eed) 2.5 urce Curre 1250 11 109 VVV T8 JV = 25 °C n-to-Source (Normaliz 1.25 , Drain-to-SoD 150 7 V 6 V R, DraiDS(on)On Resistanc 0.15 VGS = 10 V I 5 V 0 0 0 5 10 15 20 25 30 - 60- 40- 20 0 20 40 60 80 100120140160 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 20 10 000 TOP15 V A) 14 V TJ = 150 °C nt ( 16 13 V C urre 1121 VV 7 V pF) 1000 iss o-Source C 182 1 098 VVV 6 V pacitance ( 100 Coss CVCCGirosssSsss = === 0 CCC gVgdsd,s +f+ = CC 1ggd dM, CHdzs Shorted n-t Ca ai 5 V 10 Dr 4 I, D Crss 0 1 0 5 10 15 20 25 30 0 100 200 300 400 500 600 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 30 8 A) 7 nt ( 25 urre 20 TJ = 150 °C 2000 6 n-to-Source C 1105 C(pF)oss 200 Coss Eoss 345 E (μJ) oss Drai 5 TJ = 25 °C 2 , D 1 I 0 20 0 0 5 10 15 20 25 0 100 200 300 400 500 600 VGS, Gate-to-Source Voltage (V) VDS Fig. 3 - Typical Transfer Characteristics Fig. 6 - C and E vs. V oss oss DS S15-0277-Rev. D, 23-Feb-15 3 Document Number: 91479 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP12N60E www.vishay.com Vishay Siliconix 24 15 V) VDS = 480 V e Voltage ( 1260 VVDDSS == 310200 VV ent (A) 129 ourc 12 Curr o-S ain 6 e-t 8 Dr at , D , GS 4 I 3 G V 0 0 0 10 20 30 40 50 60 25 50 75 100 125 150 Qg, Total Gate Charge (nC) TJ, Case Temperature (°C) Fig. 10 - Maximum Drain Current vs. Case Temperature Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 750 100 725 A) eV) 700 ent ( ourcge ( 675 n Curr 10 TJ = 150 °C n-to-Sn Volta 650 ai aiw 625 Dr TJ = 25 °C Drdo verse 1 V, DSBreak 567050 e R , SD VGS = 0 V 550 I 525 0.1 - 60- 40- 20 0 20 40 60 80 100120140160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T , Junction Temperature (°C) J V , Source-Drain Voltage (V) SD Fig. 11 - Temperature vs. Drain-to-Source Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage 1000 Operation in this Area A) 100 Limited by RDS(on) IDM = Limited nt ( e urr 10 C n 100 μs Drai 1 Limited by RDS(on)* 1 ms , D I 0.1 TC = 25 °C 10 ms T = 150 °C BVDSS Limited SJingle Pulse 0.01 1 10 100 1000 V , Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Fig. 9 - Maximum Safe Operating Area S15-0277-Rev. D, 23-Feb-15 4 Document Number: 91479 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP12N60E www.vishay.com Vishay Siliconix 1 ent Duty Cycle = 0.5 si n Trace e an 0.2 ed Effectivmal Imped 0.1 00.1.002.05 alizher mT Single Pulse or N 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS V DS t p VGS D.U.T. VDD R G + -VDD V DS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % I AS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % Q Q GS GD 10 % VG V GS t t t t d(on) r d(off) f Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator L Same type as D.U.T. V DS Vary t to obtain p required IAS 50 kΩ 12 V 0.2 µF RG D.U.T + 0.3 µF V - DD + IAS D.U.T. -VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit I I G D Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-0277-Rev. D, 23-Feb-15 5 Document Number: 91479 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP12N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91479. S15-0277-Rev. D, 23-Feb-15 6 Document Number: 91479 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM. MIN. MAX. MIN. MAX. F A 4.24 4.65 0.167 0.183 Ø P b 0.69 1.02 0.027 0.040 Q b(1) 1.14 1.78 0.045 0.070 1) H( c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 D e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 1 2 3 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 1) L(1) 3.33 4.04 0.131 0.159 L( M* Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 b(1) L ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SIHP12N60E-E3 SIHP12N60E-GE3