New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) (cid:129) New Thermally Enhanced PowerPAK® SC-70 Package 0.0150 at VGS = 4.5 V 12 - Small Footprint Area 20 0.0166 at VGS = 2.5 V 12 13 nC - Low On-Resistance 0.0200 at VGS = 1.8 V 12 (cid:129) 100 % R Tested g 0.0324 at VGS = 1.5 V 12 (cid:129) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS 1 (cid:129) For Smart Phones and Mobile D D Marking Code Computing 2 D A Q X - Load Switches G 3 Part # code X X X - DC/DC Converters D 6 G 5 D S Lot Traceability and Date code 2.05 mm S 2.05 mm 4 S N-Channel MOSFET Ordering Information: SiA448DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 TC = 25 °C 12a Continuous Drain Current (TJ = 150 °C)a TTCA == 2750 °°CC ID 121a2, ab, c TA = 70 °C 9.9b, c A Pulsed Drain Current (t = 300 µs) IDM 30 TC = 25 °C 12a Continuous Source-Drain Diode Current IS TA = 25 °C 2.9b, c TC = 25 °C 19.2 TC = 70 °C 12.3 Maximum Power Dissipation TA = 25 °C PD 3.5b, c W TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t  5 s RthJA 28 36 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 Notes: a.Package limited b.Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 63918 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1138-Rev. A, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiA448DJ Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient VDS/TJ 21 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS  5 V, VGS = 4.5 V 12 A VGS = 4.5 V, ID = 12.4 A 0.0125 0.0150 VGS = 2.5 V, ID = 11.8 A 0.0138 0.0166 Drain-Source On-State Resistancea RDS(on)  VGS = 1.8 V, ID = 10.8 A 0.0160 0.0200 VGS = 1.5 V, ID = 3 A 0.0180 0.0324 Forward Transconductancea gfs VDS = 10 V, ID = 12.4 A 70 S Dynamicb Input Capacitance Ciss 1380 Output Capacitance Coss VDS = 1 V, VGS = 0 V, f = 1 MHz 190 pF Reverse Transfer Capacitance Crss 75 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 12.4 A 23 35 13 20 nC Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 12.4 A 2.1 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 0.6 3.3 6.6  Turn-On Delay Time td(on) 7 14 Rise Time tr VDD = 10 V, RL = 1  10 20 Turn-Off Delay Time td(off) ID  10 A, VGEN = 8 V, Rg = 1  27 41 Fall Time tf 6 12 ns Turn-On Delay Time td(on) 8 16 Rise Time tr VDD = 10 V, RL = 1  13 20 Turn-Off Delay Time td(off) ID  10 A, VGEN = 4.5 V, Rg = 1  30 45 Fall Time tf 7 14 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 12c A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = 10 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 8 16 ns Body Diode Reverse Recovery Charge Qrr 1 3 nC I = 10 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 4.5 ns Reverse Recovery Rise Time tb 3.5 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Package limited Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 63918 2 S12-1138-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiA448DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 30 10 V = 5 V thru 2 V GS V = 1.5 V GS 24 8 - Drain Current (A) ID 1128 - Drain Current (A) D 46 TC = 25 °C I 6 2 T = 125 °C VGS = 1 V C TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 0.3 0.6 0.9 1.2 1.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics 0.030 1800 C Ω) 0.024 1350 iss stance ( VGS = 1.5 V ce (pF) R - On-ResiDS(on)00..001128 VVGGSS == 12..85 VV C - Capacitan 495000 V = 4.5 V GS C C oss rss 0.006 0 0 6 12 18 24 30 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.6 V = 4.5 V I = 12.4 A GS D I = 12.4 A ge (V) 6 alized) 1.4 D Volta VDS = 10 V VDS = 16 V Norm VGS = 2.5 V ce (e o-Sour 4 V = 5 V sistanc 1.1 e-t DS Re at n- G O V - GS 2 - DS(on) 0.9 R 0 0.6 0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 63918 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1138-Rev. A, 21-May-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiA448DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 0.030 I = 12.4 A D nt (A) 10 TJ = 150 °C nce (Ω) 0.024 e Curre Resista0.018 TJ = 125 °C urc On- I - SoS 1 R - DS(on)0.012 TJ = 25 °C 0.1 0.006 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 30 I = 250 μA D 25 0.6 20 V (V) GS(th) 0.4 Power (W) 15 10 0.2 5 0 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R * DS(on) 10 100 μs A) ent ( 1 ms urr C 1 10 ms n ai Dr 100 ms - D 1 s I 10 s 0.1 DC T = 25 °C BVDSS Limited A Single Pulse 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 63918 4 S12-1138-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiA448DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 35 28 A) nt ( 21 e urr C n Drai 14 I - D PackageLimited 7 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C Current Derating* 25 2.0 20 1.5 W) 15 W) ( ( er er 1.0 w w o o P 10 P 0.5 5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC-CaseTemperature(°C) TA-AmbientTemperature(°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63918 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S12-1138-Rev. A, 21-May-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product SiA448DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp 0.1 Notes: ed Effeermal I 0.1 PDM zh aliT 0.05 t1 orm 1. Duty Cyclet,2 D = t1 N t2 0.02 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance ctivemped 0.2 eI Effmal zedher 0.1 aliT m or 0.05 N 0.02 SinglePulse 0.1 0.0001 0.001 0.01 0.1 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63918. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 63918 6 S12-1138-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix PowerPAK® SC70-6L e b e b PIN1 PIN2 PIN3 PIN1 PIN2 PIN3 L L 4 K K 2 E1 D2 E E1 D1 D1 E1 D1 3 E K K PIN6 PIN5 PIN4 PIN6 PIN5 PIN4 K3 K1 K2 K2 K1 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E C A1 Z z DETAIL Z SINGLE PAD DUAL PAD DIM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 0.355 TYP 0.014 TYP L 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 T 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 www.vishay.com 06-Aug-07 1

Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) (0.059) 0.870 (0.034) 2.200 (0.087) 1.500 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index A P P L I C A T I O N N O T E Document Number: 70486 www.vishay.com Revision: 21-Jan-08 11

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