SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • ThunderFET® technology optimizes balance VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) of R , Q , Q and Q DS(on) g sw oss 0.177 at V = 10 V 7.7 GS • 100 % R and UIS tested 150 0.185 at V = 7.5 V 7.6 4.3 nC g GS • Material categorization: 0.250 at V = 6 V 4 GS For definitions of compliance please see PowerPAK® SC-70-6L Single www.vishay.com/doc?99912 D D 6 APPLICATIONS S 5 D 4 • DC/DC converters / boost converters • Synchronous rectification SSS • Power management • LED backlighting G 2.05 mm 1 2.0 5 m m G3 D2 D1 Top View Bottom View S Marking Code: AV N-Channel MOSFET Ordering Information: SiA446DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 150 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 7.7 C T = 70 °C 6.2 C Continuous Drain Current (T = 150 °C) I J T = 25 °C D 3.3 b, c A T = 70 °C 2.6 b, c A A Pulsed Drain Current (t = 100 μs) I 10 DM T = 25 °C 12 C Continuous Source-Drain Diode Current I T = 25 °C S 2.9 b, c A Single Pulse Avalanche Current I 7 AS L = 0.1 mH Single Pulse Avalanche Energy E 2.5 mJ AS T = 25 °C 19 C T = 70 °C 12 C Maximum Power Dissipation P W T = 25 °C D 3.5 b, c A T = 70 °C 2.2 b, c A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg °C Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f t  5 s RthJA 28 36 °C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes a. Based on T = 25 °C. C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S14-0208-Rev. B, 10-Feb-14 1 Document Number: 62925 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiA446DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 150 - - V DS GS D VDS Temperature Coefficient VDS/TJ - 73 - I = 250 μA mV/°C D VGS(th) Temperature Coefficient VGS(th)/TJ - -6 - Gate-Source Threshold Voltage V V = V , I = 250 μA 2.5 - 3.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V = 150 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I μA DSS V = 150 V, V = 0 V, T = 55 °C - - 10 DS GS J On-State Drain Current a ID(on) VDS  5 V, VGS = 10 V 10 - - A V = 10 V, I = 3 A - 0.145 0.177 GS D Drain-Source On-State Resistance a RDS(on) VGS = 7.5 V, ID = 2 A - 0.151 0.185  V = 6 V, I = 1 A - 0.165 0.250 GS D Forward Transconductance a g V = 10 V, I = 3 A - 6 - S fs DS D Dynamic b Input Capacitance C - 230 - iss Output Capacitance C V = 75 V, V = 0 V, f = 1 MHz - 47 - pF oss DS GS Reverse Transfer Capacitance C - 8 - rss V = 75 V, V = 10 V, I = 3.5 A - 5.3 8 DS GS D Total Gate Charge Q g - 4.3 6.5 Gate-Source Charge Q V = 75 V, V = 7.5 V, I = 3.5 A - 1.2 - nC gs DS GS D Gate-Drain Charge Q - 1.8 - gd Output Charge Q V = 75 V, V = 0 V - 8.5 - oss DS GS Gate Resistance Rg f = 1 MHz 0.5 2.3 4.6  Turn-On Delay Time t - 5 10 d(on) Rise Time tr VDD = 75 V, RL = 29 , - 13 25 Turn-Off Delay Time td(off) ID  2.6 A, VGEN = 10 V, Rg = 1  - 10 20 Fall Time t - 10 20 f ns Turn-On Delay Time t - 10 20 d(on) Rise Time tr VDD = 75 V, RL = 29 , - 40 80 Turn-Off Delay Time td(off) ID  2.6 A, VGEN = 6 V, Rg = 1  - 5 10 Fall Time t - 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 °C - - 12 S C A Pulse Diode Forward Current (t = 100 μs) I - - 10 SM Body Diode Voltage V I = 3.5 A - 0.9 1.2 V SD S Body Diode Reverse Recovery Time t - 51 100 ns rr Body Diode Reverse Recovery Charge Qrr IF = 3.5 A, dI/dt = 100 A/μs, - 100 200 nC Reverse Recovery Fall Time ta TJ = 25 °C - 43 - ns Reverse Recovery Rise Time t - 8 - b Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0208-Rev. B, 10-Feb-14 2 Document Number: 62925 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 10 2.0 V = 10 V thru 6 V GS 8 1.6 Current (A) 6 VGS = 5 V urrent (A) 1.2 n C ai n I - DrD 4 - DraiD 0.8 TC = 25 °C I 2 0.4 T = 125 °C C V = 4 V GS T = - 55 °C C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.250 350 300 Ω) 0.200 VGS = 7.5 V sistance ( 0.150 VGS = 6 V nce (pF) 220500 Ciss On-Re 0.100 VGS = 10 V pacita 150 - DS(on) C - Ca 100 Coss R 0.050 50 C rss 0.000 0 0 2 4 6 8 10 0 20 40 60 80 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 V = 10 V, 7.5 V GS ce Voltage (V) 68 ID = 3.5V ADS = 37.5 VVD S = 75 V VDS = 120 V nce (Normalized) 111...246 ID = 3 A VGS = 6 V o-Sour 4 Resista 1.0 V - Gate-tGS 2 R - On-DS(on) 00..68 0 0.4 0 1 2 3 4 5 6 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J Gate Charge On-Resistance vs. Junction Temperature S14-0208-Rev. B, 10-Feb-14 3 Document Number: 62925 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 0.400 I = 3 A D 0.320 Current (A) 10 TJ = 150 °C esistance (Ω) 0.240 TJ = 125 °C urce On-R0.160 - SoIS 1 TJ = 25 °C - DS(on) TJ = 25 °C R 0.080 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.6 30 3.4 25 3.2 20 V) 3.0 W) V (GS(th) 2.8 ower ( 15 I = 250 μA P D 10 2.6 2.4 5 2.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by I Limited by R * DM DS(on) 10 Limited by IDon A) nt ( 1 100 μs e Curr 1 ms n Drai 0.1 10 ms I - D 110 s0 ms 10 s 0.01 T = 25 °C A DC BVDSS Limited 0.001 0.1 1 10 100 1000 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient S14-0208-Rev. B, 10-Feb-14 4 Document Number: 62925 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 10 8 A) nt ( 6 e urr C n Drai 4 - D I 2 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C Current Derating* 20 15 W) n ( o ati p si 10 s Di er w o P 5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max.) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0208-Rev. B, 10-Feb-14 5 Document Number: 62925 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 Duty Cycle = 0.5 nt e Transiance 0.2 ed Effective ermal Imped 0.1 00..015 NPoDteMs: zh ormaliT 0.02 1. Duty Cyt1clet,2 D = t1 N t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e ctive Transimpedance 0.2 ed Effeermal I zh 0.1 aliT m or N 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62925. S14-0208-Rev. B, 10-Feb-14 6 Document Number: 62925 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix PowerPAK® SC70-6L e b e b PIN1 PIN2 PIN3 PIN1 PIN2 PIN3 L L 4 K K 2 E1 D2 E E1 D1 D1 E1 D1 3 E K K PIN6 PIN5 PIN4 PIN6 PIN5 PIN4 K3 K1 K2 K2 K1 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E C A1 Z z DETAIL Z SINGLE PAD DUAL PAD DIM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 0.355 TYP 0.014 TYP L 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 T 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 www.vishay.com 06-Aug-07 1

Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) (0.059) 0.870 (0.034) 2.200 (0.087) 1.500 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index A P P L I C A T I O N N O T E Document Number: 70486 www.vishay.com Revision: 21-Jan-08 11

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SIA446DJ-T1-GE3