New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free Option Available (cid:129) TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω) ID (A)a, e Qg (Typ.) (cid:129) 100 % R and UIS Tested RoHS g 0.058 at VGS = - 4.5 V - 4 COMPLIANT - 20 8 0.094 at V = - 2.5 V - 4 APPLICATIONS GS (cid:129) Load Switch (cid:129) DC/DC Converter S1 S2 SO-8 S1 1 8 D1 G 1 2 7 D1 G1 G2 S2 3 6 D2 G 2 4 5 D2 Top View Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free) D1 D2 Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 T = 25 °C - 4e C T = 70 °C - 4e Continuous Drain Current (T = 150 °C) C I J T = 25 °C D - 4b, c, e A T = 70 °C - 3.8b, c A A Pulsed Drain Current (10 µs Pulse Width) IDM - 20 T = 25 °C - 2.5 Source-Drain Current Diode Current TC = 25 °C IS - 1.7b, c A Single Pulse Avalanche Current IAS - 6 L = 0.1 mH Single-Pulse Avalanche Energy EAS 1.8 mJ T = 25 °C 3.1 C T = 70 °C 2 Maximum Power Dissipation TC = 25 °C PD 2b, c W A TA = 70 °C 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C THERMAL RESISTANCE RATINGS Limit Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 52 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 32 40 Notes: a.Based on T = 25 °C. C b.Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d.Maximum under Steady State conditions is 110 °C/W. e.Package Limited. Document Number: 68791 www.vishay.com S-81729-Rev. A, 04-Aug-08 1

New Product Si9933CDY Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VVGDSS (tThe) mTepmerpaeturaretu Creo Cefofiecfifeicnitent ΔVΔVGSD(Sth/T)/JTJ ID = - 250 µA -3 1.19 mV/°C Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V - 100 nA Zero Gate Voltage Drain Current IDSS VDS =V -D 2S0 = V -, 2V0G SV ,= V 0G VS, =T 0J =V 5 5 °C -- 1 10 µA On-State Drain Currentb ID(on) VDS = ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistanceb RDS(on) VVGGSS = = - -4 2.5.5 V V, ,I DID = = - -4 1.8 A A 00..004785 00..005984 Ω Forward Transconductanceb gfs VDS = - 10 V, ID = - 4.8 A 11 S Dynamica Input Capacitance Ciss 665 Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz 140 pF Reverse Transfer Capacitance Crss 115 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 4.8 A 17 26 8 12 nC Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 4.8 A 2 Gate-Drain Charge Qgd 3 Gate Resistance Rg f = 1 MHz 1.2 6 12 Ω Turn-On Delay Time td(on) 6 12 Rise Time tr VDD = - 10 V, RL = 2.6 Ω 15 23 Turn-Off Delay Time td(off) ID ≅ - 3.8 A, VGEN = - 10 V, Rg = 1 Ω 26 39 Fall Time tf 9 18 ns Turn-On Delay Time td(on) 21 32 Rise Time tr VDD = - 10 V, RL = 2.6 Ω 50 75 Turn-Off Delay Time td(off) ID ≅ - 3.8 A, VGEN = - 4.5 V, Rg = 1 Ω 29 44 Fall Time tf 13 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.5 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = - 3.8 A - 0.77 - 1.2 V Body Diode Reverse Recovery Time trr 30 45 ns Body Diode Reverse Recovery Charge Qrr I = - 3.8 A, dI/dt = 100 A/µs, T = 25 °C 17 26 nC Reverse Recovery Fall Time ta F J 16 ns Reverse Recovery Rise Time tb 14 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68791 2 S-81729-Rev. A, 04-Aug-08

New Product Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 3.0 VGS=5thru3.5V VGS=3V 2.5 16 Current(A) 12 VGS=2.5V Current(A) 12..50 Drain 8 Drain TC=25 °C - ID VGS=2V - ID 1.0 4 0.5 TC=125 °C VGS=1.5V TC=- 55 °C 0 0.0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.16 1200 Ω() 0.12 900 stance VGS=2.5V e(pF) Ciss On-Resi 0.08 pacitanc 600 - S(on) VGS=4.5V C - Ca RD 0.04 300 Coss Crss 0.00 0 0 5 10 15 20 0 4 8 12 16 20 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 ID=4.8A 1.5 ID=20A V) 8 ( 1.4 ge e VGS=- 4.5V;ID=- 4.8A olta VDS=10V anc 1.3 Gate-to-SourceV 46 VDS=16V - On-ResistDS(on)(Normalized) 111...012 VGS=- 2.5V;ID=- 3.8A - R GS 2 0.9 V 0.8 0 0.7 0 3 6 9 12 15 18 - 50 - 25 0 25 50 75 100 125 150 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68791 www.vishay.com S-81729-Rev. A, 04-Aug-08 3

New Product Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.08 ID=- 4.8 A nt(A) 10 Ωance() 0.06 TJ=125 °C Curre Resist 0.04 ource TJ=150 °C TJ=25 °C - On- TJ=25 °C - SS 1 S(on) I D 0.02 R 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 50 1.2 40 1.1 V) 1.0 W) 30 ( ( S(th) ID=250 µA wer G 0.9 o V P 20 0.8 10 0.7 0.6 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ-Temperature(°C) Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 LimitedbyRDS(on)* 10 A) 1ms ( nt e urr C 1 10ms n ai Dr 100ms - D 1s I 0.1 10s TA=25 °C SinglePulse DC BVDSSLimited 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 68791 4 S-81729-Rev. A, 04-Aug-08

New Product Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 6 A) ( nt urre PackageLimited C 4 n ai Dr - D I 2 0 0 25 50 75 100 125 150 TC-CaseTemperature(°C) Current Derating* 4.0 1.5 3.2 1.2 W) 2.4 W) 0.9 ( ( wer wer Po 1.6 Po 0.6 0.8 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC-CaseTemperature(°C) TA-AmbientTemperature(°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68791 www.vishay.com S-81729-Rev. A, 04-Aug-08 5

New Product Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: eI zedEffhermal 0.1 0.05 PDM maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=90 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI Effmal 0.1 eder 0.05 zh maliT 0.02 or N SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68791. www.vishay.com Document Number: 68791 6 S-81729-Rev. A, 04-Aug-08

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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