New Product Si9407BDY Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 0.120 at VGS = - 10 V - 4.7 • TrenchFET® Power MOSFET - 60 8 nC 0.150 at VGS = - 4.5 V - 4.2 (cid:129) 100 % UIS Tested (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Primary Side Switch SO-8 S S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View D Ordering Information:Si9407BDY-T1-E3 (Lead (Pb)-free) Si9407BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 4.7 Continuous Drain Current (T = 150 °C) TC = 70 °C I - 3.8 J TA = 25 °C D - 3.2b, c TA = 70 °C - 2.6b, c A Pulsed Drain Current (10 µs Width) IDM - 20 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS -- 24b.,2 c Avalanche Current L = 0.1 mH IAS - 15 Single-Pulse Avalanche Energy E 11 mJ AS TC = 25 °C 5 Maximum Power Dissipation TTCA == 2750 °°CC PD 2.34.b2, c W TA = 70 °C 1.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d RthJA 42 53 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 19 25 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 69902 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1

New Product Si9407BDY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V VDS Temperature Coefficient ΔVDS/TJ - 50 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ - 5 V, VGS = - 10 V - 20 A VGS = - 10 V, ID = - 3.2 A 0.100 0.120 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 2.9 A 0.126 0.150 Forward Transconductancea gfs VDS = - 15 V, ID = - 3.2 A 8.5 S Dynamicb Input Capacitance Ciss 600 Output Capacitance Coss VDS = - 30 V, VGS = 0 V, f = 1 MHz 70 pF Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 3.2 A 14.5 22 8 12 nC Gate-Source Charge Qgs VDS = - 30 V, VGS = - 4.5 V, ID = - 3.9 A 2.2 Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 14 Ω Turn-On Delay Time td(on) 30 45 Rise Time tr VDD = - 30 V, RL = 11.5 Ω 70 105 ns Turn-Off Delay Time td(off) ID ≅ - 2.6 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 Fall Time tf 30 45 Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = - 30 V, RL = 11.5 Ω 13 20 ns Turn-Off Delay Time td(off) ID ≅ - 2.6 A, VGEN = - 10 V, Rg = 1 Ω 35 55 Fall Time tf 30 45 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 4.2 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 2 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 30 50 ns Body Diode Reverse Recovery Charge Qrr 35 60 nC I = - 2 A, dI/dt = - 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 16 ns Reverse Recovery Rise Time tb 14 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69902 2 S09-0704-Rev. B, 27-Apr-09

New Product Si9407BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 25 5 VGS=10Vthru5V 20 4 A) A) ( ( Current 15 Current 3 Drain 10 VGS=4V Drain 2 - D - D TC=25 °C I I 5 1 VGS=3V TC=150 °C TC=-55 °C 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.30 1000 0.25 800 Ω) Resistance( 00..1250 VGS=4.5V citance (pF) 600 Ciss - On- VGS=10V Capa 400 on) 0.10 C - S( D R 200 0.05 Coss Crss 0 0 0 5 10 15 20 0 10 20 30 40 50 60 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID=3.2 A ID=3.2A age (V) 8 e 1.6 VGS=10V olt nc 1.4 V a ate-to-Source 46 VDS=30V - On-Resiston)(Normalized) 11..02 VGS=4.5V G S( - GS 2 RD V 0.8 0 0.6 0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69902 www.vishay.com S09-0704-Rev. B, 27-Apr-09 3

New Product Si9407BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.30 ID=3.2A 0.25 Ω) nt (A) nce ( e Curre 10 TJ=150 °C Resista 0.20 TA=125 °C Sourc - On- 0.15 - IS DS(on) TA=25 °C TJ=25 °C R 0.10 1 0.05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 30 25 0.4 ID=250 µA (V) 20 nce 0.2 W) Varia er( 15 w S(th) 0 Po G 10 V - 0.2 5 - 0.4 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ-Temperature(°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 10 LimitedbyRDS(on)* A) ( 100µs nt e urr C 1 1ms n ai Dr 10ms - D 100ms I 0.1 1s 10s TA=25 °C BVDSS DC SinglePulse Limited 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area www.vishay.com Document Number: 69902 4 S09-0704-Rev. B, 27-Apr-09

New Product Si9407BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 6 5 5 4 Current(A) 34 sipation (W) 3 Drain er Dis 2 - 2 w D o I P 1 1 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC-CaseTemperature(°C) TC-CaseTemperature(°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69902 www.vishay.com S09-0704-Rev. B, 27-Apr-09 5

New Product Si9407BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 nt DutyCycle=0.5 e Transiance ctivemped 0.2 Notes: eI 0.1 Effmal 0.1 PDM eder zh aliT 0.05 t1 Norm 1.DutyCyclet,2D= tt12 0.02 2.PerUnitBase=RthJA=75 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI Effmal 0.1 0.05 eder zh 0.02 aliT m or N SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69902. www.vishay.com Document Number: 69902 6 S09-0704-Rev. B, 27-Apr-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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