Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET V (V) R (Ω) MAX. I (A) a Q (TYP.) DS DS(on) D g • Ultra small 0.8 mm x 0.8 mm outline 0.072 at V = 4.5 V 2.9 GS • Ultra thin 0.357 mm height 0.079 at V = 2.5 V 2.8 20 GS 3 nC • Typical ESD protection 2000 V (HBM) 0.092 at V = 1.8 V 2.6 GS • Material categorization: for definitions of 0.125 at VGS = 1.5 V 2.2 compliance please see www.vishay.com/doc?99912 MICRO FOOT® 0.8 x 0.8 APPLICATIONS S 22 • Portable devices such as cell phones, D SS x 33 smart phones, and tablet PCs x x x - Load switch x - Small signal switch G 0. 11 8 mm 1 0.8 m m 44 GG - High speed switching D Backside View Bump Side View Marking Code: xx = AJ S xxx = Date/Lot traceability code N-Channel MOSFET Ordering Information: Si8810EDB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V ± 8 GS T = 25 °C 2.9 a A T = 70 °C 2.3 a A Continuous Drain Current (T = 150 °C) I J T = 25 °C D 2.1 b A T = 70 °C 1.7 b A A Pulsed Drain Current (t = 300 μs) I 15 DM T = 25 °C 0.7 a A Continuous Source-Drain Diode Current I T = 25 °C S 0.4 b A T = 25 °C 0.9 a A T = 70 °C 0.6 a A Maximum Power Dissipation P W T = 25 °C D 0.5 b A T = 70 °C 0.3 b A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak Temperature) c 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, d 105 135 t ≤ 5 s R °C/W Maximum Junction-to-Ambient b, e thJA 200 260 Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 185 °C/W. e. Maximum under steady state conditions is 330 °C/W. S15-0346-Rev. B, 23-Feb-15 1 Document Number: 62829 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8810EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 20 - - V DS GS D V Temperature Coefficient ΔV /T - 21 - DS DS J I = 250 μA mV/°C V Temperature Coefficient ΔV /T D - -2.7 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 μA 0.4 - 0.9 V GS(th) DS GS D V = 0 V, V = ± 4.5 V - - ± 0.5 DS GS Gate-Source Leakage I GSS V = 0 V, V = ± 8 V - - ± 5 DS GS μA V = 20 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 55 °C - - 10 DS GS J On-State Drain Current a I V ≥ 5 V, V = 4.5 V 10 - - A D(on) DS GS V = 4.5 V, I = 1 A - 0.058 0.072 GS D V = 2.5 V, I = 1 A - 0.063 0.079 Drain-Source On-State Resistance a R GS D Ω DS(on) V = 1.8 V, I = 1 A - 0.072 0.092 GS D V = 1.5 V, I = 0.5 A - 0.080 0.125 GS D Forward Transconductance a g V = 10 V, I = 1 A - 12 - S fs DS D Dynamic b Input Capacitance C - 245 - iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz - 55 - pF oss DS GS Reverse Transfer Capacitance C - 25 - rss V = 10 V, V = 8 V, I = 1 A - 5.2 8 DS GS D Total Gate Charge Q g - 3 4.5 nC Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1 A - 0.35 - gs DS GS D Gate-Drain Charge Q - 0.45 - gd Gate Resistance R f = 1 MHz - 5 - Ω g Turn-On Delay Time t - 7 15 d(on) Rise Time tr VDD = 10 V, RL = 10 Ω - 12 25 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω - 25 50 Fall Time t - 7 15 f ns Turn-On Delay Time t - 5 10 d(on) Rise Time tr VDD = 10 V, RL = 10 Ω - 10 20 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 8 V, Rg = 1 Ω - 15 30 Fall Time t - 7 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 °C - - 0.7 S C A Pulse Diode Forward Current I - - 15 SM Body Diode Voltage V I = 1 A, V = 0 V - 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t - 11 20 ns rr Body Diode Reverse Recovery Charge Q - 5 10 nC rr I = 1 A, dI/dt = 100 A/μs, T = 25 °C F J Reverse Recovery Fall Time t - 7 - a ns Reverse Recovery Rise Time t - 4 - b Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0346-Rev. B, 23-Feb-15 2 Document Number: 62829 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.50 1 0-2 1 0-3 2.00 urrent (mA) 1.50 TJ = 25 °C Current (A) 11 00--45 TJ = 150 °C ate C 1.00 Gate 1 0-6 TJ = 25 °C - GGSS I - GSS 1 0-7 I 0.50 1 0-8 0.00 1 0-9 0 4 8 12 16 0 4 8 12 16 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 10 V = 5 V thru 2 V GS 12 8 Current (A) 9 VGS = 1.5 V urrent (A) 6 ain n C I Dr -D 6 - DraiD 4 TC = 25 °C I 3 2 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.200 350 V = 1.5 V GS 300 0.160 Ω) Ciss e ( F) 250 R - On-ResistancDS(on) 00..018200 V = 4.5 V VGS = 1.8 V C - Capacitance (p 112050000 Coss 0.040 GS V = 2.5 V GS 50 Crss 0.000 0 0 3 6 9 12 15 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance vs. Drain-to-Source Voltage S15-0346-Rev. B, 23-Feb-15 3 Document Number: 62829 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 100 V) ID = 1 A VDS = 6 V ge ( 6 A) TJ = 150 °C e Volta VDS = 3 V urrent ( 10 c C o-Sour 4 VDS = 9.6 V ource TJ = 25 °C - Gate-tGS 2 I - SS 1 V 0 0.1 0 1 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Q - Total Gate Charge (nC) V - Source-to-Drain Voltage (V) g SD Gate Charge Source-Drain Diode Forward Voltage 1.5 0.8 V = 4.5 V, 3.7 V, 2.5 V; I = 1A GS D zed) 1.4 VGS = 1.5 V; ID = 0.5A 0.7 ali m 1.3 or 0.6 N ce ( 1.2 V) Resistan 1.1 V (GS(th) 0.5 ID = 250 μA n- 0.4 O R - DS(on) 01..90 0.3 0.8 0.2 - 50 - 25 0 25 50 75 100 125 150 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) TJ - Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage 0.200 14 12 I = 1 A 0.160 D e (Ω) 10 c n-Resistan0.120 TJ = 125 °C Power (W) 68 O0.080 R - DS(on)0.040 TJ = 25 °C 4 2 0.000 0 0 1 2 3 4 5 0.001 0.01 0.1 1 10 100 1000 V - Gate-to-Source Voltage (V) Time (s) GS On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) S15-0346-Rev. B, 23-Feb-15 4 Document Number: 62829 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by R * DS(on) 10 A) nt ( 100 µs e urr C 1 n 1 ms ai Dr I - D 100 ms 0.1 T = 25 °C 10 s A 1 s, 10 ms DC BVDSS Limited 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient 3.0 0.8 2.5 0.6 nt (A) 2.0 on (W) Curre 1.5 sipati 0.4 Drain er Dis I - D 1.0 Pow 0.2 0.5 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA - Ambient Temperature (°C) TA-Ambient Temperature(°C) Current Derating* Power Derating Note When mounted on 1" x 1" FR4 with full copper. * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J (max.) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0346-Rev. B, 23-Feb-15 5 Document Number: 62829 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: edEffeermalI 0.1 0.05 PDM zh maliT 0.02 t1 Nor 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=185 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: edEffeermalI 0.1 0.05 PDM zh maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=330 °C/W SinglePulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62829. S15-0346-Rev. B, 23-Feb-15 6 Document Number: 62829 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S e S 4x Ø b XXX S S S e D G D AK S Mark on Backside of die 4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215 b A2 e A 1 A b1 k Bump Note 2 e Note 4 Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. MILLIMETERS a INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.328 0.365 0.402 0.0129 0.0144 0.0158 A1 0.136 0.160 0.184 0.0053 0.0062 0.0072 A2 0.192 0.205 0.218 0.0076 0.0081 0.0086 b 0.200 0.220 0.240 0.0078 0.0086 0.0094 b1 0.175 0.0068 e 0.400 0.0157 S 0.160 0.180 0.200 0.0062 0.0070 0.0078 D 0.720 0.760 0.800 0.0283 0.0299 0.0314 K 0.040 0.070 0.100 0.0015 0.0027 0.0039 Note a. Use millimeters as the primary measurement. ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033 Revision: 16-Feb-15 1 Document Number: 69442 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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