Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET V (V) R (Ω) I (A) a Q (TYP.) DS DS(on) D g • Small 0.8 mm x 0.8 mm outline area 0.054 at V = 4.5 V 3.5 GS • Low 0.4 mm max. profile 0.060 at V = 2.5 V 3.3 GS 8 0.068 at V = 1.8 V 3.1 4.3 nC • Low On-resistance GS 0.086 at V = 1.5 V 2.3 • Material categorization: GS 0.135 at V = 1.2 V 1 for definitions of compliance please see GS www.vishay.com/doc?99912 MICRO FOOT® 0.8 x 0.8 S APPLICATIONS D 22 SS • Load switch with low voltage drop x 33 x x • Load switch for 1.2 V, 1.5 V, 1.8 V x x power lines G • Smart phones, tablet PCs, portable 0. 11 8 mm 1 0.8 m m D44 GG media players S Backside View Bump Side View N-Channel MOSFET Marking Code: xx = AB xxx = Date/Lot traceability code Ordering Information: Si8802DB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 8 DS V Gate-Source Voltage V ± 5 GS T = 25 °C 3.5 a A T = 70 °C 2.8 a A Continuous Drain Current (T = 150 °C) I J T = 25 °C D 3 b A T = 70 °C 2.4 b A A Pulsed Drain Current (t = 300 μs) I 15 DM T = 25 °C 0.7 a A Continuous Source-Drain Diode Current I T = 25 °C S 0.4 b A T = 25 °C 0.9 a A T = 70 °C 0.6 a A Maximum Power Dissipation P W T = 25 °C D 0.5 b A T = 70 °C 0.3 b A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak Temperature) c 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, d 105 135 t ≤ 5 s R °C/W Maximum Junction-to-Ambient b, e thJA 200 260 Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 185 °C/W. e. Maximum under steady state conditions is 330 °C/W. S15-0346-Rev. C, 23-Feb-15 1 Document Number: 67999 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8802DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 8 - - V DS GS D V Temperature Coefficient ΔV /T - 7 - DS DS J I = 250 μA mV/°C V Temperature Coefficient ΔV /T D - -2.1 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 μA 0.35 - 0.7 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = ± 5 V - - ± 100 nA GSS DS GS V = 8 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I DSS V = 8 V, V = 0 V, T = 55 °C - - 10 μA DS GS J On-State Drain Current a I V ≥ 5 V, V = 4.5 V 10 - - A D(on) DS GS V = 4.5 V, I = 1 A - 0.044 0.054 GS D V = 2.5 V, I = 1 A - 0.049 0.060 GS D Drain-Source On-State Resistance a R V = 1.8 V, I = 0.5 A - 0.055 0.068 Ω DS(on) GS D V = 1.5 V, I = 0.2 A - 0.060 0.086 GS D V = 1.2 V, I = 0.1 A - 0.080 0.135 GS D Forward Transconductance a g V = 4 V, I = 1 A - 13 - S fs DS D Dynamic b Total Gate Charge Q - 4.3 6.5 g Gate-Source Charge Q V = 4 V, V = 4.5 V, I = 1 A - 0.44 - nC gs DS GS D Gate-Drain Charge Q - 0.72 - gd Gate Resistance R f = 1 MHz - 3.5 - Ω g Turn-On Delay Time t - 5 10 d(on) TRuisren -TOimff eDelay Time tdt(or ff) ID ≅ 1 VAD, DV G=E 4N V=, 4R.5L =V ,4 R Ωg = 1 Ω -- 2125 4300 ns Fall Time t - 7 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 °C - - 0.7 S A A Pulse Diode Forward Current I - - 15 SM Body Diode Voltage V I = 1 A, V = 0 V - 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t - 20 40 ns rr Body Diode Reverse Recovery Charge Q - 5 10 nC rr I = 1 A, di/dt = 100 A/μs, T = 25 °C F J Reverse Recovery Fall Time t - 14 - a ns Reverse Recovery Rise Time t - 60 - b Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0346-Rev. C, 23-Feb-15 2 Document Number: 67999 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8802DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 10 V = 5 V thru 2 V GS 12 8 ent (A) 9 VGS= 1.5 V nt (A) 6 Curr urre -Drain 6 Drain C 4 TC= 25 °C D - I D I T = 125 °C 3 2 C V = 1 V GS T = -55 °C C 0 0 0 0.5 1 1.5 2 2.5 3 0.0 0.3 0.6 0.9 1.2 1.5 V -Drain-to-Source Voltage (V) V -Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics 0.16 600 V = 1.2 V GS 500 C Ω) 0.12 iss stance ( VGS= 1.5 V ce (pF) 400 On-Resi 0.08 VGS= 1.8 V apacitan 300 - C RDS(on) 0.04 V = 4.5 V C - 200 Coss GS 100 V = 2.5 V GS C rss 0 0 0 3 6 9 12 15 0 2 4 6 8 ID-Drain Current (A) VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.4 I = 1 A age (V) 4 D VDS= 4 V ormalized) 1.2 VGS=V 4G.S5 =V ,1 2.5.5 V V, ,I D1 .=8 0V.;2 I DA = 1 A Volt 3 e(N o-Source 2 VDS= 2 V VDS= 6.4 V Resistanc 1.0 VGS = 1.2 V, ID = 0.1 A V-Gate-tGS 1 R-On-DS(on) 0.8 0 0.6 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 Q -Total Gate Charge (nC) T -Junction Temperature (°C) g J Gate Charge On-Resistance vs. Junction Temperature S15-0346-Rev. C, 23-Feb-15 3 Document Number: 67999 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8802DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.15 I = 1 A D 0.12 Ω) nt (A) 10 nce ( e a 0.09 e Curr TJ= 150 °C Resist ourc On- 0.06 TJ= 125 °C I-SS 1 TJ= 25 °C R-DS(on) 0.03 TJ= 25 °C 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD-Source-to-Drain Voltage (V) VGS-Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 14 12 0.7 10 V(V)GS(th) 00..56 ID= 250 μA Power (W) 68 4 0.4 2 0.3 0 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T -Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by R * DS(on) 10 100 μs A) nt ( e urr 1 ms C 1 n ai Dr 10 ms - ID 10 s, 1 s, 100 ms 0.1 T = 25 °C DC A BVDSS Limited 0.01 0.1 1 10 100 V -Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient S15-0346-Rev. C, 23-Feb-15 4 Document Number: 67999 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8802DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.5 0.8 3 0.6 Current (A) 2.25 sipation (W) 0.4 Drain 1.5 er Dis w - o ID 1 P 0.2 0.5 0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA-Ambient Temperature (°C) TA-Ambient Temperature(°C) Current Derating* Power Derating Note When mounted on 1" x 1" FR4 with full copper. * The power dissipation P is based on T = 150 °C,n using junction-to-ambient thermal resistance, and is more useful in settling the upper D J (max.) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0346-Rev. C, 23-Feb-15 5 Document Number: 67999 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si8802DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: edEffeermalI 0.1 0.05 PDM zh maliT 0.02 t1 Nor 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=185 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper) 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: edEffeermalI 0.1 0.05 PDM zh maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=330 °C/W SinglePulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67999. S15-0346-Rev. C, 23-Feb-15 6 Document Number: 67999 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S e S 4x Ø b XXX S S S e D G D AK S Mark on Backside of die 4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215 b A2 e A 1 A b1 k Bump Note 2 e Note 4 Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. MILLIMETERS a INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.328 0.365 0.402 0.0129 0.0144 0.0158 A1 0.136 0.160 0.184 0.0053 0.0062 0.0072 A2 0.192 0.205 0.218 0.0076 0.0081 0.0086 b 0.200 0.220 0.240 0.0078 0.0086 0.0094 b1 0.175 0.0068 e 0.400 0.0157 S 0.160 0.180 0.200 0.0062 0.0070 0.0078 D 0.720 0.760 0.800 0.0283 0.0299 0.0314 K 0.040 0.070 0.100 0.0015 0.0027 0.0039 Note a. Use millimeters as the primary measurement. ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033 Revision: 16-Feb-15 1 Document Number: 69442 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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