Si7114DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET (cid:8)(cid:6)(cid:12)(cid:14)(cid:5)(cid:11)(cid:4)(cid:15)(cid:7)(cid:5)(cid:16)(cid:16)(cid:3)(cid:6)(cid:17) (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:2)(cid:7) (cid:1) TrenchFET(cid:2) Gen II Power MOSFET VDS (V) rDS(on) ((cid:1)) ID (A) Qg (Typ) (cid:1) New Low Thermal Resistance 0.0075 @ VGS = 10 V 18.3 PowerPAK(cid:2) Package with Low RoHS 3300 0.010 @ VGS = 4.5 V 15.9 1122.55 (cid:1) 11.0007%-m Rm PTerosftieled (cid:1)(cid:2)A(cid:3)va(cid:4)i(cid:5)la(cid:6)b(cid:7)le(cid:8)(cid:9) g (cid:3)(cid:8)(cid:8)(cid:9)(cid:10)(cid:11)(cid:3)(cid:4)(cid:10)(cid:12)(cid:13)(cid:7) PowerPAK 1212-8 (cid:1) Synchronous Rectification D 3.30 mm S 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: Si7114DN-T1 Si7114DN-T1—E3 (Lead (Pb)-Free) (cid:3)(cid:18)(cid:7)(cid:12)(cid:9)(cid:5)(cid:4)(cid:2)(cid:15)(cid:16)(cid:3)(cid:19)(cid:10)(cid:16)(cid:5)(cid:16)(cid:15)(cid:6)(cid:3)(cid:4)(cid:10)(cid:13)(cid:20)(cid:7)(cid:15)(cid:21)(cid:4) (cid:15)(cid:22)(cid:15)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:12)(cid:4)(cid:25)(cid:2)(cid:6)(cid:26)(cid:10)(cid:7)(cid:2)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) (cid:3) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 VV Gate-Source Voltage VGS (cid:1)20 TA = 25(cid:3)C 18.3 11.7 CCoonnttiinnuuoouuss DDrraaiinn CCuurrrreenntt ((TTJJ == 115500(cid:3)(cid:3)CC))aa TA = 70(cid:3)C IIDD 14.7 9.4 AA Pulsed Drain Current IDM 60 Continuous Source Current (Diode Conduction)a IS 3.2 1.3 Single Avalanche Current IAS 29 A LL == 00.11 mmHH Single Avalanche Energy EAS 42 mJ TA = 25(cid:3)C 3.8 1.5 MMaaxxiimmuumm PPoowweerr DDiissssiippaattiioonnaa TA = 70(cid:3)C PPDD 2.0 0.8 WW Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 (cid:3)(cid:3)CC Soldering Recommendations (Peak Temperature)b,c 260 (cid:4)(cid:25)(cid:2)(cid:6)(cid:16)(cid:3)(cid:9)(cid:15)(cid:6)(cid:2)(cid:7)(cid:10)(cid:7)(cid:4)(cid:3)(cid:13)(cid:11)(cid:2)(cid:15)(cid:6)(cid:3)(cid:4)(cid:10)(cid:13)(cid:20)(cid:7) Parameter Symbol Typical Maximum Unit t (cid:2) 10 sec 24 33 MMaaxxiimmuumm JJuunnccttiioonn-ttoo-AAmmbbiieennttaa Steady State RRthJA 65 81 (cid:3)C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73039 www.vishay.com S-51412—Rev. D, 01-Aug-05 1

Si7114DN Vishay Siliconix (cid:16)(cid:12)(cid:7)(cid:1)(cid:2)(cid:4)(cid:15)(cid:7)(cid:8)(cid:2)(cid:11)(cid:10)(cid:1)(cid:10)(cid:11)(cid:3)(cid:4)(cid:10)(cid:12)(cid:13)(cid:7)(cid:15)(cid:21)(cid:4) (cid:15)(cid:22)(cid:15)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:12)(cid:4)(cid:25)(cid:2)(cid:6)(cid:26)(cid:10)(cid:7)(cid:2)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) (cid:28) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 (cid:2)A 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = (cid:1)20 V (cid:1)100 nA VDS = 30 V, VGS = 0 V 1 ZZeerroo GGaattee VVoollttaaggee DDrraaiinn CCuurrrreenntt IIDDSSSS VDS = 30 V, VGS = 0 V, TJ = 55(cid:3)C 5 (cid:2)(cid:2)AA On-State Drain Currenta ID(on) VDS (cid:3) 5 V, VGS = 10 V 40 A DDrraaiinn--SSoouurrccee OOnn--SSttaattee RReessiissttaanncceeaa rrDDSS((oonn)) VGS = 10 V, ID = 18.3 A 0.0062 0.0075 (cid:1)(cid:1) VGS = 4.5 V, ID = 15.9 A 0.0081 0.010 Forward Transconductancea gfs VDS = 15 V, ID = 18.3 A 77 S Diode Forward Voltagea VSD IS = 3.2 A, VGS = 0 V 0.7 1.2 V Dynamicb Total Gate Charge Qg 12.5 19 Gate-Source Charge Qgs VDDSS = 15 V,, VGGSS = 4.5 V,, IDD = 18.3 A 6.3 nC Gate-Drain Charge Qgd 3.6 Gate-Resistance Rg f = 1 MHz 0.7 1.4 2.1 (cid:1) Turn-On Delay Time td(on) 10 15 Rise Time tr VVDDDD == 1155 VV,, RRLL == 1155 (cid:1)(cid:1) 10 15 Turn-Off Delay Time td(off) ID (cid:4) 1 A, VGEN = 10 V, Rg = 6 (cid:1) 45 70 ns Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/(cid:2)s 30 60 Body Diode Reverse Recovery Charge Qrr IF = 3.2 A, di/dt = 100 A/(cid:2)s 19 38 nc Notes a. Pulse test; pulse width (cid:2) 300 (cid:2)s, duty cycle (cid:2) 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 48 48 A) A) nt ( 36 nt ( 36 e e urr urr C C n n ai 24 ai 24 Dr Dr – – TC = 125(cid:3)C D D I 12 I 12 25(cid:3)C 3 V –55(cid:3)C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com Document Number: 73039 2 S-51412—Rev. D, 01-Aug-05

Si7114DN Vishay Siliconix (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) On-Resistance vs. Drain Current Capacitance 0.012 2500 0.010 ) 2000 (cid:1) Ciss ance ( 0.008 VGS = 4.5 V e (pF) sist VGS = 10 V anc 1500 n-Re 0.006 pacit O a – n) 0.004 C – C 1000 o rDS( 0.002 500 Crss Coss 0.000 0 0 12 24 36 48 60 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 e (V) 8 VIDD =S =1 81.53 V A 1.4 VIDG =S 1=8 1.30 AV g Volta nce Gate-to-Source 46 – On-Resistaon)(Normalized) 11..02 – DS( S r G 2 0.8 V 0 0.6 0 5 10 15 20 25 30 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature ((cid:3)C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.030 60 ID = 5 A 0.025 ) nt (A) TJ = 150(cid:3)C (cid:1)nce ( 0.020 ID = 18.3 A e a e Curr 10 Resist 0.015 – SourcS TJ = 25(cid:3)C – On-on) 0.010 I S( D r 0.005 0.000 1 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 73039 www.vishay.com S-51412—Rev. D, 01-Aug-05 3

Si7114DN Vishay Siliconix (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.4 50 0.2 ID = 250(cid:3)(cid:2)A 40 ariance (V) ––00..20 wer (W) 30 V o S(th) P 20 G –0.4 V 10 –0.6 –0.8 0 –50 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ – Temperature ((cid:3)C) Time (sec) Safe Operating Area 100 IDM Limited *Limited by rDS(on) P(t) = 0.0001 10 A) nt ( P(t) = 0.001 Curre 1 LIiDm(oitne)d P(t) = 0.01 ain P(t) = 0.1 Dr – P(t) = 1 ID 0.1 STinAg =le 2 P5u(cid:3)lCse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS (cid:5) minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 Notes: ed Effeermal I 0.1 0.1 PDM malizTh 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = t1 2. Per Unit Base = RthtJ2A = 65(cid:3)C/W Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 73039 4 S-51412—Rev. D, 01-Aug-05

Si7114DN Vishay Siliconix (cid:4)(cid:17)(cid:8)(cid:10)(cid:11)(cid:3)(cid:9)(cid:15)(cid:11)(cid:25)(cid:3)(cid:6)(cid:3)(cid:11)(cid:4)(cid:2)(cid:6)(cid:10)(cid:7)(cid:4)(cid:10)(cid:11)(cid:7)(cid:15)(cid:21)(cid:23)(cid:24)(cid:3)(cid:11)(cid:15)(cid:5)(cid:13)(cid:9)(cid:2)(cid:7)(cid:7)(cid:15)(cid:13)(cid:12)(cid:4)(cid:2)(cid:14)(cid:27) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 nt Duty Cycle = 0.5 e ed Effective Transiermal Impedance 0.1 00..21 Single Pulse zh aliT m 0.05 Nor 0.02 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73039. Document Number: 73039 www.vishay.com S-51412—Rev. D, 01-Aug-05 5

Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1

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