Si5913DC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 0.084 at VGS = - 10 V - 4f (cid:129) LITTLE FOOT® Plus Schottky Power MOSFET - 20 0.108 at VGS = - 4.5 V - 4f 4 nC (cid:129) Compliant to RoHS Directive 2002/95/EC 0.175 at V = - 2.5 V - 3.5 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY (cid:129) HDD Vf (V) - DC/DC Converter VKA (V) Diode Forward Voltage IF (A)a (cid:129) Asynchronous Rectification 20 0.5 at 1 A 2 1206-8 ChipFET® S A 1 A K A G K S Marking Code D G DJ XX Lot Traceability D and Date Code Part # Code Bottom View D K Ordering Information: Si5913DC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si5913DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage (MOSFET) VDS - 20 Reverse Voltage (Schottky) VKA 20 V Gate-Source Voltage (MOSFET) VGS ± 12 TC = 25 °C - 4f Continuous Drain Current (T = 150 °C) (MOSFET) TC = 70 °C I - 4f J TA = 25 °C D - 3.7b, c TA = 70 °C - 2.9b, c Pulsed Drain Current (MOSFET) IDM - 15 A Continuous Source-Drain Diode Current TC = 25 °C I - 2.6 (MOSFET Diode Conduction) TA = 25 °C S - 1.4b, c Average Forward Current (Schottky) IF 2b Pulsed Forward Current (Schottky) IFM 5 T = 25 °C 3.1 C T = 70 °C 2.0 Maximum Power Dissipation (MOSFET) C TA = 25 °C 1.7b, c TA = 70 °C PD 1.1b, c W T = 25 °C 3.1 C T = 70 °C 2.0 Maximum Power Dissipation (Schottky) C TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendation (Peak Temperature)g, h 260 Document Number: 68920 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1

Si5913DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)b, d t ≤ 5 s RthJA 62 74 Maximum Junction-to-Foot (Drain) (MOSFET) Steady State RthJF 32 40 °C/W Maximum Junction-to-Ambient (Schottky)b, e t ≤ 5 s RthJA 77 95 Maximum Junction-to-Foot (Drain) (Schottky) Steady State RthJF 33 40 Notes: a. Based on T = 25 °C. C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s d. Maximum under steady state conditions is 115 °C/W. e. Maximum under steady state conditions is 130 °C/W. f. Package limited. g. See Solder Profile (www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed an is notrequired to ensure adequate bottom side soldering interconnection. h. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VVGDSS (tThe) mTepmerpaeturaretu Creo Cefofiecfifeicnitent ΔVΔVGDS(Sth/T)/JTJ ID = - 250 µA - 320 mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS =V -D 2S0 = V -, V20G SV ,= V 0G VS, =T J0 =V 5 5 °C -- 1 10 µA On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 10 V - 15 A VGS = - 10 V, ID = - 3.7 A 0.070 0.084 Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 3.2 A 0.090 0.108 Ω VGS = - 2.5 V, ID = - 2.5 A 0.140 0.175 Forward Transconductancea gfs VDS = - 10 V, ID = - 3.7 A 6 S Dynamicb Input Capacitance Ciss 330 Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz 80 pF Reverse Transfer Capacitance Crss 57 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A 8 12 4 6 nC Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A 0.8 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 1.2 6 12 Ω Turn-On Delay Time td(on) 3 6 Rise Time tr VDD = - 10 V, RL = 3.4 Ω 10 20 Turn-Off DelayTime td(off) ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 16 24 Fall Time tf 8 15 ns Turn-On Delay Time td(on) 18 27 Rise Time tr VDD = - 10 V, RL = 3.4 Ω 40 60 Turn-Off DelayTime td(off) ID ≅ - 2.9 A, VGEN = - 4.5 V, Rg = 1 Ω 18 27 Fall Time tf 10 15 www.vishay.com Document Number: 68920 2 S10-0548-Rev. B, 08-Mar-10

Si5913DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 1.2 A Pulse Diode Forward Current ISM - 15 Body Diode Voltage VSD IS = - 2.9 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery Time trr 23 35 ns Body Diode Reverse Recovery Charge Qrr I = - 2.9 A, dI/dt = 100 A/µs, T = 25 °C 14 21 nC Reverse Recovery Fall Time ta F J 11 ns Reverse Recovery Rise Time tb 12 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 1 AIF, =T J1 = A 125 °C 00..4326 00..5403 V Vr = 5 V 0.015 0.08 Vr = 5 V, TJ = 85 °C 0.50 5.00 Maximum Reverse Leakage Current Irm Vr = 20 V 0.02 0.10 mA Vr = 20 V, TJ = 85 °C 0.7 7.00 Vr = 20 V, TJ = 125 °C 5 50 Junction Capacitance CT Vr = 10 V 60 pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68920 www.vishay.com S10-0548-Rev. B, 08-Mar-10 3

Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 15 2.0 VGS=10Vthru4V 12 1.6 A) A) TC=- 55 °C ( ( ent 9 VGS=3V ent 1.2 urr urr C C n n ai ai Dr 6 Dr 0.8 - ID - ID TC=25 °C 3 0.4 TC= 125 °C VGS=2V 0 0.0 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 2.0 VDS- Drain-to-SourceVoltage(V) VGS- Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.20 600 VGS= 2.5 V 500 0.16 Ωsistance () 0.12 nce (pF) 400 Ciss n-Re VGS= 4.5 V acita 300 O p - DS(on) 0.08 VGS= 10 V C - Ca 200 R 0.04 Coss 100 Crss 0.00 0 0 3 6 9 12 15 0 4 8 12 16 20 ID- Drain Current (A) VDS- Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.5 ID=3.7 A VGS= 10 V, ID = 3.7 A V) ( 8 SourceVoltage 6 VDS=10V VDS=16 V On-Resistancemalized) 11..13 VIDG S= =3 .42. 5A V - Gate-to- 4 - RDS(on)(Nor 0.9 S G 2 V 0 0.7 0.0 1.5 3.0 4.5 6.0 7.5 9.0 - 50 - 25 0 25 50 75 100 125 150 Qg- TotalGateCharge(nC) TJ- JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 68920 4 S10-0548-Rev. B, 08-Mar-10

Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 10 0.20 ID=3.7 A 0.16 A) TJ=150 °C Ω) ( ( eCurrent 1 TJ=25 °C esistance 0.12 c R - SourIS - On-S(on) 0.08 TJ=TJ25= °1C25 °C RD 0.04 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 3 6 9 12 VSD- Source-to-DrainVoltage(V) VGS- Gate-to-SourceVoltage(V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 30 25 1.1 20 V (V)GS(th) 0.9 ID= 250 µA Power (W) 15 10 0.7 5 0.5 0 - 50 - 25 0 25 50 75 100 125 150 10-4 10-3 10-2 10-1 1 10 TJ- Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRD S ( o n )* 10 nt (A) 100µs e Curr 1 1ms n ai Dr 10ms - D 100ms I 0.1 1s, 10s DC TA=25 °C BVDSS SinglePulse Limited 0.01 0.1 1 10 100 VDS- Drain-to-Source Voltage (V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Case Document Number: 68920 www.vishay.com S10-0548-Rev. B, 08-Mar-10 5

Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 6 4.0 5 3.2 A) 4 ent ( Package Limited W) 2.4 ain Curr 3 Power( 1.6 Dr - 2 D I 0.8 1 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC- Case Temperature (°C) TC-CaseTemperature(°C) Current Derating* Power Derating, Junction-to-Foot 1.5 1.2 W) 0.9 ( er w o P 0.6 0.3 0.0 0 25 50 75 100 125 150 TA-AmbientTemperature(°C) Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 68920 6 S10-0548-Rev. B, 08-Mar-10

Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 1 nt Transieance DutyCycle=0.5 ctivemped 0.2 Notes: edEffeermalI 0.1 0.1 PDM zh maliT 0.05 t1 Nor 1.DutyCyclet,2D= t1 0.02 2.PerUnitBase=RthtJ2A=95 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI Effmal 0.1 eder 0.05 zh aliT 0.02 m or N SinglePulse 0.01 10-4 10-3 10-2 10-1 1 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68920 www.vishay.com S10-0548-Rev. B, 08-Mar-10 7

Si5913DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 10-1 10 10-2 TJ = 150 °C Reverse Current (mA) 111000---543 VR = 20 VVR = 10 V VR = 15 V - Source Current (A) 0.11 TJ = 25 °C - 10-6 S R I 0.01 I 10-7 10-8 0.001 - 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) Reverse Current vs. Junction Temperature Forward Diode Voltage 250 20 200 16 F) p ce ( 150 W) 12 acitan wer ( p o a 100 P 8 C C - 50 4 0 0 0 4 8 12 16 20 10-4 10-3 10-2 10-1 1 10 100 VDS- Drain-to-Source Voltage (V) Time (s) Capacitance Single Pulse Power, Junction-to-Ambient www.vishay.com Document Number: 68920 8 S10-0548-Rev. B, 08-Mar-10

Si5913DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 1 ent DutyCycle=0.5 Transiance ctivemped 0.2 Notes: eI edEffermal 0.1 0.1 PDM zh maliT 0.05 t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=105 °C/W SinglePulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI edEffermal 0.1 0.05 zh aliT 0.02 m Nor SinglePulse 0.01 10-4 10-3 10-2 10-1 1 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68920. Document Number: 68920 www.vishay.com S10-0548-Rev. B, 08-Mar-10 9

Package Information Vishay Siliconix 1206-8 ChipFET(cid:1) 4 L D 8 7 6 5 5 6 7 8 4 E1 E 4 3 2 1 1 2 3 4 x S e b c Backside View 2X 0.10/0.13 R A 1 C DETAIL X NOTES: 1. All dimensions are in millimeaters. 2. Mold gate burrs shall not exceed 0.13 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed 0.08 mm. 4. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 1.00 − 1.10 0.039 − 0.043 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.1 0.15 0.20 0.004 0.006 0.008 c1 0 − 0.038 0 − 0.0015 D 2.95 3.05 3.10 0.116 0.120 0.122 E 1.825 1.90 1.975 0.072 0.075 0.078 E1 1.55 1.65 1.70 0.061 0.065 0.067 e 0.65 BSC 0.0256 BSC L 0.28 − 0.42 0.011 − 0.017 S 0.55 BSC 0.022 BSC 5(cid:1)Nom 5(cid:1)Nom ECN: C-03528—Rev. F, 19-Jan-04 DWG: 5547 Document Number: 71151 www.vishay.com 15-Jan-04 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET® 0.093 (2.357) 0 2) 6 4) 8 3 3 1 0 0 0 9 0. 2. 0. 0. ( ( 2 9) 2 5 0 5 0. 0. ( 0.026 0.016 0.010 (0.650) (0.406) (0.244) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72593 2 Revision: 21-Jan-08

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