Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175° MOSFET PRODUCT SUMMARY FEATURES V (V) R (Ω) I (A) • Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.120 at VGS = - 10 V - 3.1 - 60 (cid:129) TrenchFET® Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 (cid:129) Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 8 D1 G1 G2 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View D1 D2 Ordering Information:Si4948BEY-T1-E3 (Lead (Pb)-free) Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID -- 32..16 -- 22..40 Pulsed Drain Current (10 µs Pulse Width) IDM - 25 A Continuous Source Current (Diode Conduction)a IS - 2 - 1.1 Avalanche Current IAS 15 L = 0.1 mH Single Pulse Avalanche Energy EAS 11 mJ TA = 25 °C 2.4 1.4 Maximum Power Dissipationa PD W TA = 70 °C 1.7 0.95 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 53 62.5 Maximum Junction-to-Ambienta RthJA Steady State 85 110 °C/W Maximum Junction-to-Foot Steady State RthJF 30 37 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72847 www.vishay.com S09-1002-Rev. B, 01-Jun-09 1

Si4948BEY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 60 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 25 A VGS = - 10 V, ID = - 3.1 A 0.100 0.120 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 0.2 A 0.126 0.150 Forward Transconductancea gfs VDS = - 15 V, ID = - 3.1 A 8.5 S Diode Forward Voltagea VSD IS = - 2 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg 14.5 22 Gate-Source Charge Qgs VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2.2 nC Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 14 Ω Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = - 30 V, RL = 30 Ω 15 22 Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 50 75 ns Fall Time tf 35 55 Source-Drain Reverse Recovery Time trr IF = - 2 A, dI/dt = 100 A/µs 30 50 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 V thru 5 V 20 20 Drain Current (A) 1105 4 V Drain Current (A) 1105 -ID -ID TC = 125 °C 5 5 25 °C 3 V -55 °C 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 VDS -Drain-to-Source Voltage (V) VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72847 2 S09-1002-Rev. B, 01-Jun-09

Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 1000 0.35 800 )Ω 0.30 ( sistance 0.25 nce (pF) 600 Ciss e a n-R 0.20 acit O p - S(on) 0.15 VGS = 4.5 V VGS = 1 0V C -Ca 400 D 0.10 R 200 0.05 Coss Crss 0.00 0 0 5 10 15 20 25 0 10 20 30 40 50 60 ID - Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.2 VDS = 30 V VGS = 10 V ID = 3.1 A 2.0 ID = 3.1 A V) 8 Source Voltage ( 6 On-Resistanceormalized) 111...468 Gate-to- 4 -DS(on)(N 1.2 - R 1.0 S G 2 V 0.8 0 0.6 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 175 Qg -Total Gate Charge (nC) TJ -Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 20 0.40 TJ = 150 °C 0.35 10 )Ω 0.30 A) e( Current ( esistanc 0.25 ID = 3.1 A urce On-R 0.20 -SoIS - DS(on) 00..1105 R TJ = 25 °C 0.05 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD -Source-to-Drain Voltage (V) VGS -Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72847 www.vishay.com S09-1002-Rev. B, 01-Jun-09 3

Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 50 0.4 40 V) ce ( 0.2 ID = 250 µA W) 30 n aria er ( V w h) 0.0 Po 20 S(t G V -0.2 10 -0.4 0 -50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited A) 10 by RDS(on)* P(t) = 0.0001 ( nt e urr C 1 P(t) = 0.001 n ai Dr ID(on) P(t) = 0.01 - Limited ID P(t) = 0.1 0.1 TA = 25 °C Single Pulse P(t) = 1 P(t) = 10 BVDSS Limited DC 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Case 2 1 ent Duty Cycle = 0.5 e Transiedance 0.2 ctivmp Notes: ed Effeermal I 0.1 0.1 PDM zh maliT 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = tt12 2. Per Unit Base = RthJA = 85°C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com Document Number: 72847 4 S09-1002-Rev. B, 01-Jun-09

Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp ed Effeermal I 0.1 0.1 zh 0.05 aliT m Nor 0.02 SinglePu lse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72847. Document Number: 72847 www.vishay.com S09-1002-Rev. B, 01-Jun-09 5

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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