Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) Q (Typ.) DS DS(on) D g Definition 60 0.041 at VGS = 10 V 6.5 9.2 nC (cid:129) TrenchFET® Power MOSFET 0.052 at VGS = 4.5 V 5.8 (cid:129) 175 °C Maximum Junction Temperature (cid:129) 100 % R Tested g (cid:129) Compliant to RoHS directive 2002/95/EC SO-8 D1 D2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 Ordering Information:Si4946BEY-T1-E3 (Lead (Pb)-free) Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C 6.5 TC = 70 °C 5.5 Continuous Drain Current (T = 150 °C) I J TA = 25 °C D 5.3a, b TA = 70 °C 4.4a, b A Pulsed Drain Current IDM 30 TC = 25 °C 3.1 Continuous Source Drain Diode Current IS TA = 25 °C 2a, b Avalanche Current IAS 12 L = 0 1 mH Single-Pulse Avalanche Energy EAS 7.2 mJ TC = 25 °C 3.7 TC = 70 °C 2.6 Maximum Power Dissipation TA = 25 °C PD 2.4a, b W TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 73411 www.vishay.com S09-2434-Rev. C, 16-Nov-09 1

Si4946BEY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V VDS Temperature Coefficient ΔVDS/TJ 53 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.4 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 5.3 A 0.033 0.041 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 4.7 A 0.041 0.052 Forward Transconductancea gfs VDS = 15 V, ID = 5.3 A 24 S Dynamicb Input Capacitance Ciss 840 Output Capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz 71 pF Reverse Transfer Capacitance Crss 44 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 5.3 A 17 25 9.2 12 nC Gate-Source Charge Qgs VDS = 30 V, VGS = 5 V, ID = 5.3 A 3.3 Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 3.1 6.5 9.5 Ω Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 30 V, RL = 6.8 Ω 120 180 Turn-Off Delay Time td(off) ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 Fall Time tf 30 45 ns Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = 30 V, RL = 6.8 Ω 12 20 Turn-Off Delay Time td(off) ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 25 40 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 3.1 A Pulse Diode Forward Currenta ISM 30 Body Diode Voltage VSD IS = 2 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr 25 50 nC I = 4.4 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 18 ns Reverse Recovery Rise Time tb 7 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73411 2 S09-2434-Rev. C, 16-Nov-09

Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 30 10 VGS = 10 V thru 5 V 25 8 Drain Current (A) 1250 4 V Drain Current (A) 46 -ID 10 -ID TC = 150 °C 2 25 °C 5 3 V - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS -Drain-to-Source Voltage (V) VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.100 1200 1000 )Ω 0.080 Ciss m n-Resistance ( 0.060 VGS = 4.5 V pacitance (pF) 680000 O 0.040 Ca - on) C - 400 DS( VGS = 10 V R 0.020 200 Coss 0.000 0 Crss 0 5 10 15 20 25 30 0 10 20 30 40 50 60 ID -Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.2 ID = 5.3 A ID = 5.3 A 2.0 V) 8 e ( 1.8 g e a c Gate-to-Source Volt 46 VDS = 30 V VDS = 48 V -On-ResistanS(on)(Normalized) 111...246 VGS = 10 VVGS = 4.5 V D -S R 1.0 G 2 V 0.8 0 0.6 0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 175 Qg -Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73411 www.vishay.com S09-2434-Rev. C, 16-Nov-09 3

Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 30 0.10 )Ω e ( ID = 5.3 A c n 0.08 a st si A) 10 TJ = 175 °C Re TJ = 150 °C ent ( On- 0.06 urr ce e C our urc o-S 0.04 So n-t - ai S TJ = 25 °C Dr TJ = 25 °C I - n) 0.02 o S( D R 1 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD -Source-to-Drain Voltage (V) VGS -Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 20 2.6 ID = 250 µA 2.4 V) W) 15 V (GS(th) 22..02 Power ( 10 1.8 1.6 5 1.4 1.2 0 -50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 100 µs A) nt ( e Curr 1 1 ms n Drai 10 ms - D 100 ms I 0.1 TA = 25 °C Single Pulse 1 s 10 s DC 0.01 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73411 4 S09-2434-Rev. C, 16-Nov-09

Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 8 4.0 7 3.5 6 3.0 A) ent ( 5 W) 2.5 Curr 4 er ( 2.0 n w Drai 3 Po 1.5 -D I 2 1.0 1 0.5 0 0.0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 100 A) nt ( e urr C e h c n 10 a al v A k a e P I - C T = L· ID A BV - V DD 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation P is based on T = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73411 www.vishay.com S09-2434-Rev. C, 16-Nov-09 5

Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 ent Duty Cycle = 0.5 ctive Transimpedance 0.2 Notes: ed Effeermal I 0.1 0.1 PDM zh maliT 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = tt12 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e Transiance ctive mped 0.2 ed Effeermal I 0.1 0.1 zh aliT m or N 0.05 Single Pulse 0.02 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73411. www.vishay.com Document Number: 73411 6 S09-2434-Rev. C, 16-Nov-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SI4946BEY-T1-E3 SI4946BEY-T1-GE3