Si4936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) Q (Typ.) DS DS(on) D g Definition 0.035 at VGS = 10 V 6.9 (cid:129) TrenchFET® Power MOSFET 30 4.5 nC (cid:129) Compliant to RoHS Directive 2002/95/EC 0.051 at VGS = 4.5 V 5.7 APPLICATIONS (cid:129) Low Current DC/DC Conversion (cid:129) Notebook System Power SO-8 S1 1 8 D1 D1 D2 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free) Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V ± 20 GS T = 25 °C 6.9 C T = 70 °C 5.5 Continuous Drain Current (T = 150 °C) C I J TA = 25 °C D 5.9a, b TA = 70 °C 4.7a, b A Pulsed Drain Current IDM 30 T = 25 °C 2.3 Continuous Source-Drain Diode Current TCA = 25 °C IS 1.7a, b TC = 25 °C 2.8 Maximum Power Dissipation TTCA == 2750 °°CC PD 21a.,8 b W TA = 70 °C 1.3a, b Operating Junction and Storage Temperature Range T , T - 55 to 150 °C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 58 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 38 45 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 110 °C/W. Document Number: 74469 www.vishay.com S09-0767-Rev. B, 04-May-09 1

Si4936BDY Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ 26.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 5.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 ns VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 µA On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 5.9 A 0.029 0.035 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 4.9 A 0.042 0.051 Forward Transconductancea gfs VDS = 10 V, ID = 5.9 A 12 S Dynamicb Input Capacitance Ciss 530 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 100 pF Reverse Transfer Capacitance Crss 55 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 5.9 A 9.1 15 4.5 7 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 5.9 A 1.8 Gate-Drain Charge Qgd 1.7 Gate Resistance Rg f = 1 MHz 3 Ω Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 15 V, RL = 3.2 Ω 130 195 Turn-Off Delay Time td(off) ID ≅ 4.7 A, VGEN = 4.5 V, Rg = 1 Ω 12 20 Fall Time tf 32 50 ns Turn-On Delay Time td(on) 5 10 Rise Time tr VDD = 15 V, RL = 3.2 Ω 25 40 Turn-Off Delay Time td(off) ID ≅ 4.7 A, VGEN = 10 V, Rg = 1 Ω 12 20 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 6.9 A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = 4.7 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 12 24 nC I = 4.7 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 9 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74469 2 S09-0767-Rev. B, 04-May-09

Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 30 10 VGS = 10 V thru 5 V 24 8 A) A) urrent ( 18 urrent ( 6 TC = - 55 °C C C n n Drai 12 4 V Drai 4 TC = 125 °C - - D D I I 6 2 TC = 25 C 3 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 800 0.07 Ωnce () 0.06 pF) 600 Ciss sista VGS = 4.5 V nce ( n-Re 0.05 acita 400 O p - Ca S(on) 0.04 C - RD VGS = 10 V 200 Coss 0.03 Crss 0.02 0 0 6 12 18 24 30 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.7 ID = 5.9 A 1.6 ID = 5.9 A e (V) 8 1.5 VGS = 10 V Source Voltag 6 VDS = 15 V VDS = 24 V n-Resistance malized) 111...234 VGS = 4.5 V Gate-to- 4 - OS(on)(Nor 11..01 - S RD G 2 0.9 V 0.8 0 0.7 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74469 www.vishay.com S09-0767-Rev. B, 04-May-09 3

Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.10 ID = 5.9 A Ω) 0.08 Current (A) TJ = 150 °C esistance ( urce 10 On-R 0.06 So - 125 °C - IS DS(on) 0.04 R TJ = 25 °C 25 °C 1 0.02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 40 ID = 250 µA 2.2 V) W) 30 (S(th) 2.0 wer ( G o V P 20 1.8 10 1.6 1.4 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by R * DS(on) 10 A) nt ( 100 µs e Curr 1 1 ms n ai 10 ms Dr - D 100 ms I 0.1 STinAg =le 2P5u °lsCe 11 0s s DC 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified DS GS DS(on) Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 74469 4 S09-0767-Rev. B, 04-May-09

Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 8 3.0 2.5 6 nt (A) on (W) 2.0 Curre 4 sipati 1.5 - Drain D Power Dis 1.0 I 2 0.5 0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74469 www.vishay.com S09-0767-Rev. B, 04-May-09 5

Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ed Effectivermal Imp 0.1 0.1 NPoDteMs: alizTh 0.05 t1 orm 1. Duty Cyclet,2 D = t1 N 0.02 2. Per Unit Base = RthtJ2A = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e e Transiedance 00..12 ctivmp ed Effeermal I 0.1 0.05 zh aliT m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74469. www.vishay.com Document Number: 74469 6 S09-0767-Rev. B, 04-May-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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