Si4914BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 0.021 at VGS = 10 V 8.4 (cid:129) LITTLE FOOT® Plus Integrated Schottky Channel-1 6.7 0.027 at VGS = 4.5 V 7.4 (cid:129) 100 % Rg and UIS Tested 30 0.020 at VGS = 10 V 8d (cid:129) Compliant to RoHS Directive 2002/95/EC Channel-2 7.0 0.025 at VGS = 4.5 V 8d APPLICATIONS (cid:129) Notebook PC SCHOTTKY PRODUCT SUMMARY - System Power dc-to-dc V (V) SD VDS (V) Diode Forward Voltage IF (A) D1 30 0.50 V at 1.0 A 2.0 SO-8 G1 D1 1 8 G 1 N-Channel 1 D1 2 7 S1 / D2 MOSFET S1/D2 G 2 3 6 S1 / D2 S2 4 5 S1 / D2 Schottky Diode G2 To p V i e w N-Channel 2 Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) MOSFET Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TC = 25 °C 8.4 8d Continuous Drain Current (TJ = 150 °C)a, b TTCA == 2750 °°CC ID 6.67.b7, c 7.74.b4, c TA = 70 °C 5.3b, c 5.7b, c Pulsed Drain Current (10 µs Pulse Width) IDM 40 40 A TC = 25 °C 2.4 2.8 Continuous Source-Drain Diode Current IS TA = 25 °C 1.0b, c 1.1b, c PulseD Source-Drain Current ISM 40 40 Single-Pulse Avalanche Current IAS 15 L = 0.1 mH Single-Pulse Avalanche Energy EAS 11.2 mJ TC = 25 °C 2.7 3.1 TC = 70 °C 1.7 2.0 Maximum Power Dissipationa, b TA = 25 °C PD 1.7b, c 2.0b, c W TA = 70 °C 1.1b, c 1.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Package limited. Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 1

Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 59 70 52 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 36 45 32 40 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2. MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Ch-1 30 Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA V Ch-2 30 VDS Temperature Coefficient ΔVDS/TJ Ch-1 35 mV/°C I = 250 µA D VGS(th) Temperature Coefficient ΔVGS(th)/TJ Ch-1 - 6.2 Ch-1 1.2 2.7 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-2 1.2 2.7 Ch-1 100 Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V nA Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 Zero Gate Voltage Drain Current IDSS µA Ch-1 15 V = 30 V, V = 0 V, T = 85 °C DS GS J Ch-2 10000 Ch-1 20 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V A Ch-2 20 VGS = 10 V, ID = 8 A Ch-1 0.0165 0.021 VGS = 10 V, ID = 8 A Ch-2 0.0155 0.020 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 4.5 V, ID = 6 A Ch-1 0.0215 0.027 VGS = 4.5 V, ID = 6 A Ch-2 0.020 0.025 VDS = 15 V, ID = 8 A Ch-1 29 Forward Transconductanceb gfs S VDS = 15 V, ID = 8 A Ch-2 33 IS = 1.7 A, VGS = 0 V Ch-1 0.77 1.1 Diode Forward Voltageb VSD V IS = 1 A, VGS = 0 V Ch-2 0.46 0.5 Dynamica Ch-1 6.7 10.5 Total Gate Charge Qg Channel-1 Ch-2 7.0 11.0 V = 15 V, V = 4.5 V, I = 8 A DS GS D Ch-1 2.8 Gate-Source Charge Qgs nC Ch-2 2.8 Channel-2 V = 15 V, V = 4.5 V, I = 8 A Ch-1 2.0 Gate-Drain Charge Qgd DS GS D Ch-2 2.0 Ch-1 2.9 6.0 Gate Resistance Rg Ω Ch-2 2.0 4.0 www.vishay.com Document Number: 69654 2 S09-2109-Rev. E, 12-Oct-09

Si4914BDY Vishay Siliconix MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Ch-1 9 18 Turn-On Delay Time td(on) Channel-1 Ch-2 10 20 V = 15 V, R = 3 Ω DD L Ch-1 10 20 Rise Time tr ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 9 18 Ch-1 16 32 Turn-Off Delay Time td(off) Channel-2 ns V = 15 V, R = 3 Ω Ch-2 16 32 DD L I ≅ 5 A, V = 10 V, R = 1 Ω Ch-1 9 18 Fall Time tf D GEN g Ch-2 8 16 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 35 55 Source-Drain Reverse Recovery Time trr IF = 2.2 A, dI/dt = 100 A/µs Ch-2 21 35 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 40 Body Diode Reverse Recovery Charge Qrr nC IF = 2.2 A, dI/dt = 100 A/µs Ch-2 11 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 19 Reverse Recovery Fall Time ta IF = 2.2 A, dI/dt = 100 A/µs Ch-2 11 ns IF = 2.2 A, dI/dt = 100 A/µs Ch-1 16 Reverse Recovery Rise Time tb IF = 2.2 A, dI/dt = 100 A/µs Ch-2 10 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 3

Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 2.0 VGS=10V thru5V 40 1.6 nt (A) 30 4V ent (A) 1.2 - Drain CurreD 20 - Drain CurrID 0.8 TC=25 °C I 10 0.4 3V TC=125 °C TJ= - 55 °C 0 0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 1000 Ciss 0.04 800 Ω) sistance ( 0.03 nce (pF) 600 n-Re VGS=4.5V acita O p - 0.02 Ca 400 S(on) C - RD 0.01 VGS=10V 200 Coss Crss 0 0 0 10 20 30 40 50 0 6 12 18 24 30 ID- Drain Current (A) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.7 ge (V) 8 ID=8A VDS=10V e 1.5 ID=7A VGS=10V a c Source Volt 6 VDS=15V VDS=20V On-Resistan malized) 1.3 VGS=4.5V Gate-to- 4 - S(on)(Nor 1.1 - RD S G 2 0.9 V 0 0.7 0 3.2 6.4 9.6 12.8 16.0 - 50 - 25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ- Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge www.vishay.com Document Number: 69654 4 S09-2109-Rev. E, 12-Oct-09

Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.10 TJ=150 °C 10 0.08 Ω) A) e ( Current ( 1 TJ=25 °C Resistanc 0.06 ource 0.1 - On- 0.04 - SIS DS(on) TA=125 °C 0.01 R 0.02 TA=25 °C 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD- Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 100 ID=250 µA 0.2 80 V) ID=5mA ( ce - 0.1 W) 60 n Varia wer ( o h) - 0.4 P 40 S(t G V - 0.7 20 - 1.0 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ- Temperature (°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 10 A) nt ( 1ms e Curr 1 n 10ms ai Dr - D 100ms I 0.1 1s 10s TA=25 °C DC SinglePulse 0.01 0.1 1 10 100 VDS- Drain-to-Source Voltage (V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 5

Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 8 A) nt ( 6 e urr C n ai 4 Dr - D I 2 0 0 25 50 75 100 125 150 TC- Case Temperature (°C) Current Derating* 3.5 1.5 2.8 1.2 W) 2.1 W) 0.9 er ( er ( w w o o P 1.4 P 0.6 0.7 0.3 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC- Case Temperature (°C) TA- Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 69654 6 S09-2109-Rev. E, 12-Oct-09

Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: zedEffehermalI 0.1 0.05 PDM maliT t1 Nor 1.DutyCyclet,2D= t1 0.02 t2 2.PerUnitBase=RthJA=120 °C/W 3.TJM- TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI 0.1 Effmal 0.05 eder zh aliT 0.02 m or N SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 7

Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 2.0 VGS=10 V thru5V 40 1.6 nt (A) 30 4V ent (A) 1.2 - Drain Curre 20 - Drain CurrD 0.8 TJ=25 °C D I I 10 0.4 3V TJ=125 °C TJ= - 55 °C 0 0 0 0.5 1.0 1.5 2.0 2.5 0 1.2 2.4 3.6 4.8 6.0 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1200 Ciss 0.034 960 Ω) ce ( F) n p - On-Resista 00..002228 VGS=4.5V Capacitance ( 742800 DS(on) VGS=10V C - Coss R 0.016 240 Crss 0.010 0 0 10 20 30 40 50 0 6 12 18 24 30 ID- Drain Current (A) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.7 e (V) 8 ID=8A VDS=10V 1.5 ID=7.5A VGS=10V Source Voltag 6 VDS=15V VDS=20V n-Resistance malized) 1.3 VGS=4.5V ate-to- 4 - Oon)(Nor 1.1 G S( - S RD G 2 0.9 V 0 0.7 0 3.4 6.8 10.2 13.6 17.0 - 50 - 25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 69654 8 S09-2109-Rev. E, 12-Oct-09

Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.10 0.08 Ω) A) e ( urrent ( 10 sistanc 0.06 C e ce n-R - Sour 1 TJ=150 °C TJ=25 °C - Oon) 0.04 TA=125 °C IS DS( R 0.02 TA=25 °C 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD- Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-1 100 VDS=20V 10-2 VDS=30V 80 A) se ( 10-3 W) 60 Rever VDS=10V ower ( - 10-4 P 40 R I 10-5 20 10-6 0 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ- Temperature (°C) Time(s) Reverse Current Schottky Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 10 A) 1ms nt ( e urr C 1 n 10ms ai Dr - D 100ms I 0.1 1s 10s DC TA=25 °C SinglePulse 0.01 0.1 1 10 100 VDS- Drain-to-Source Voltage (V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 9

Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 11.0 8.8 A) nt ( 6.6 PackageLimited e urr C n Drai 4.4 - D I 2.2 0 0 25 50 75 100 125 150 TC- Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 W) 2.4 W) 0.9 er ( er ( w w o o P 1.6 P 0.6 0.8 0.3 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC- Case Temperature (°C) TA- Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 69654 10 S09-2109-Rev. E, 12-Oct-09

Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 DutyCycle=0.5 nt e Transiance 0.2 ectiveImped 0.1 0.1 Notes: Effmal 0.05 PDM eder alizTh t1 Norm 0.02 1.DutyCyclet,2D= tt12 2.PerUnitBase=RthJA=115 °C/W SinglePulse 3.TJM - TA=PDMZthJA(t) 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 nt Transieance DutyCycle=0.5 ctivemped 0.2 eI Effmal 0.1 0.1 eder zh maliT 0.05 or N 0.02 SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69654. Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 11

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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