Si4888DY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Available 30 0.007 at VGS = 10 V 16 (cid:129) TrenchFET® Power MOSFET 0.010 at VGS = 4.5 V 13 (cid:129) High-Efficiency PWM Optimized (cid:129) 100 % R Tested g SO-8 D S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information:Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID 1163 181 A Pulsed Drain Current IDM ± 50 Continuous Source Current (Diode Conduction)a IS 3.0 1.40 TA = 25 °C 3.5 1.6 Maximum Power Dissipationa PD W TA = 70 °C 2.2 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 29 35 Maximum Junction-to-Ambient (MOSFET)a RthJA Steady State 65 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 18 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71336 www.vishay.com S09-0221-Rev. F, 09-Feb-09 1

Si4888DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.80 1.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 40 A VGS = 10 V, ID = 16 A 0.0058 0.007 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 13 A 0.008 0.010 Forward Transconductancea gfs VDS = 15 V, ID = 16 A 38 S Diode Forward Voltagea VSD IS = 3 A, VGS = 0 V 0.74 1.1 V Dynamicb Total Gate Charge Qg 16.3 24 Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 16 A 4 nC Gate-Drain Charge Qgd 5.9 Gate Resistance Rg 0.5 1.5 2.6 Ω Turn-On Delay Time td(on) 14 20 Rise Time tr VDD = 15 V, RL = 15 Ω 10 15 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 44 70 ns Fall Time tf 20 30 Source-Drain Reverse Recovery Time trr IF = 3 A, dI/dt = 100 A/µs 40 70 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 50 VGS = 10 V thru 3 V 40 40 A) A) Current ( 30 Current ( 30 Drain 20 Drain 20 - ID - ID TC = 125 °C 10 10 25 °C 2 V -55 °C 1 V 0 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS -Drain-to-Source Voltage (V) VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71336 2 S09-0221-Rev. F, 09-Feb-09

Si4888DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.020 2500 0.016 2000 Ω) sistance ( 0.012 nce (pF) 1500 Ciss e a On-R VGS = 4.5 V pacit - 0.008 Ca 1000 S(on) VGS = 10 V C - Coss D R 0.004 500 Crss 0.000 0 0 10 20 30 40 50 0 5 10 15 20 25 30 ID - Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VDS = 15 V e (V) 8 ID = 16 A 1.6 IVDG =S 1=6 1 A0 V g e a c olt an 1.4 Gate-to-Source V 46 - On-ResistS(on)(Normalized) 11..02 - RD S G 2 V 0.8 0 0.6 0 7 14 21 28 35 -50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.05 0.04 Ω) Current (A) 10 TJ = 150 °C esistance ( 0.03 urce On-R So - 0.02 - IS TJ = 25 °C DS(on) ID = 16 A R 0.01 1 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD -Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71336 www.vishay.com S09-0221-Rev. F, 09-Feb-09 3

Si4888DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.4 100 ID = 250 µA 0.2 80 e (V) 0.0 anc W) 60 Vari -0.2 er ( w S(th) Po 40 G -0.4 V -0.6 20 -0.8 0 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 2 1 nt Duty Cycle = 0.5 e Transiance ctive mped 0.2 Notes: ed Effeermal I 0.1 0.1 PDM zh maliT 0.05 t1 Nor 1. Duty Cyclet,2 D = t1 0.02 t2 2. Per Unit Base = RthJA = 68°C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 ed Effeermal I 0.1 0.05 zh aliT m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71336. www.vishay.com Document Number: 71336 4 S09-0221-Rev. F, 09-Feb-09

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