Si4850EY Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Definition 0.022 at VGS = 10 V 8.5 (cid:129) TrenchFET® Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 (cid:129) 175 °C Maximum Junction Temperature (cid:129) Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 T = 25 °C 8.5 6.0 Continuous Drain Current (TJ = 175 °C)a TA = 70 °C ID 7.1 5.0 A A Pulsed Drain Current IDM 40 Avalanche Current IAS 15 Single Pulse Avalanche Energy EAS 11 mJ T = 25 °C 3.3 1.7 Maximum Power Dissipationa TA = 70 °C PD 2.3 1.2 W A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 36 45 Maximum Junction-to-Ambient a RthJA Steady State 75 90 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 20 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71146 www.vishay.com S09-1341-Rev. F, 13-Jul-09 1

Si4850EY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS =V 6D0S V =, V60G SV ,= V 0G VS, =T 0J =V 55 °C 210 µA On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 40 A VGS = 10 V, ID = 6.0 A 0.018 0.022 Drain-Source On-State Resistancea RDS(on) VVGGSS == 1100 VV,, IIDD == 66..00 AA,, TTJJ == 117255 °°CC 00..003319 00..003477 Ω VGS = 4.5 V, ID = 5.1 A 0.025 0.031 Forward Transconductancea gfs VDS = 15 V, ID = 6.0 A 25 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 18 27 Gate-Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 6.0 A 3.4 nC Gate-Drain Charge Qgd 5.3 Gate Resistance Rg VGS = 0.1 V, f = 5 MHz 0.5 1.4 2.4 Ω Turn-On Delay Time td(on) 10 20 Rise Time tr VDD = 30 V, RL = 30 Ω 10 20 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 25 50 ns Fall Time tf 12 24 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 50 80 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 40 VGS = 10 V thru 5 V 32 32 A) A) Current ( 24 4 V Current ( 24 Drain 16 Drain 16 I - D I - D TC = 150 °C 8 8 25 °C 3 V - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71146 2 S09-1341-Rev. F, 13-Jul-09

Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.06 1400 1200 0.05 Ω) Ciss ce ( 0.04 F) 1000 n p On-Resista 0.03 VGS = 4.5 V pacitance ( 680000 - S(on) 0.02 VGS = 10 V C - Ca 400 D R Coss 0.01 200 Crss 0.00 0 0 8 16 24 32 40 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.2 ID = 6.0 V ID = 6.0 A 2.0 age (V) 8 VDS = 30 V ce 1.8 VGS = 10 V olt an e V 6 sistd) 1.6 Sourc On-Remalize 1.4 - Gate-to-GS 24 - RDS(on) (Nor 11..02 V 0.8 0 0.6 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.06 0.05 e Current (A) 10 TJ = 175 °C TJ = 25 °C ΩResistance () 00..0034 ID = 6.0 A urc On- I- SoS - S(on) 0.02 D R 0.01 1 0.00 0.00 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71146 www.vishay.com S09-1341-Rev. F, 13-Jul-09 3

Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.8 50 0.4 40 V) nce ( 0.0 )W 30 VariaS(th) - 0.4 ID = 250 µA ( rewoP 20 G V - 0.8 10 - 1.2 0 - 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 2 1 tn Duty Cycle = 0.5 e evitcisnarTecnadepm 0.2 Notes: effE deIe lamr 0.1 0.1 P DM izlamhT 0.05 t 1 roN 0.02 1. Duty Cyclet, 2 D = t 1 t 2 2. Per Unit Base = Rt hJA = 75 °C/W Single Pulse 3. TJ M - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 tn Duty Cycle = 0.5 e evitcisnarTecnadepm 0.2 effE deI lamre 0.1 0.1 zh 0.05 ilaT m ro 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71146. www.vishay.com Document Number: 71146 4 S09-1341-Rev. F, 13-Jul-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SI4850EY-E3 SI4850EY-T1-E3 SI4850EY SI4850EY-T1 SI4850EY-T1-GE3