Si4848DY Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Definition 150 0.085 at VGS = 10 V 3.7 (cid:129) TrenchFET® Power MOSFETs 0.095 at VGS = 6.0 V 3.5 (cid:129) Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View S Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free) Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID 33..70 22..71 Pulsed Drain Current IDM 25 A Avalanche Current L = 0.1 mH IAS 10 Continuous Source Current (Diode Conduction)a IS 2.5 1.3 TA = 25 °C 3.0 1.5 Maximum Power Dissipationa PD W TA = 70 °C 1.9 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 35 42 Maximum Junction-to-Ambienta RthJA Steady State 68 82 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 23 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71356 www.vishay.com S09-0870-Rev. C, 18-May-09 1

Si4848DY Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 120 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 120 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 25 A VGS = 10 V, ID = 3.5 A 0.068 0.085 Drain-Source On-State Resistancea RDS(on) Ω VGS = 6.0 V, ID = 3.0 A 0.076 0.095 Forward Transconductancea gfs VDS = 15 V, ID = 5 A 15 S Diode Forward Voltagea VSD IS = 2.5 A, VGS = 0 V 0.75 1.2 V Dynamicb Total Gate Charge Qg 17 21 Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 3.5 A 3.2 nC Gate-Drain Charge Qgd 6.0 Gate Resistance Rg 0.5 0.85 1.8 Ω Turn-On Delay Time td(on) 9.0 14 Rise Time tr VDD = 75 V, RL = 21 Ω 10 15 Turn-Off Delay Time td(off) ID ≅ 3.5 A, VGEN = 10 V, Rg = 6 Ω 24 35 ns Fall Time tf 17 25 Source-Drain Reverse Recovery Time trr IF = 2.5 A, dI/dt = 100 A/µs 45 70 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 25 25 VGS = 10 V thru 6 V 20 20 A) A) nt ( 15 nt ( 15 e e urr urr C C n n Drai 10 5 V Drai 10 - - ID ID TC = 125 °C 5 5 25 °C 3 V, 4 V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71356 2 S09-0870-Rev. C, 18-May-09

Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.15 1200 ()Ω 0.12 900 Ciss ce F) n p esista 0.09 VGS = 6 V ance ( n-R acit 600 O p - 0.06 VGS = 10 V Ca S(on) C - D 300 R 0.03 Crss Coss 0.00 0 0 5 10 15 20 25 0 30 60 90 120 150 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 3.0 VDS = 75 V VGS = 10 V e (V) 16 ID = 3.5 A 2.5 ID = 3.5 A Gate-to-Source Voltag 182 - On-ResistanceS(on)(Normalized) 112...050 - RD S G 4 V 0.5 0 0.0 0 6 12 18 24 30 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.25 0.20 Current (A) 10 TJ = 150 °C TJ = 25 °C Resistance 0.15 ID = 3.5 A - Source S - On-S(on) 0.10 I D R 0.05 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71356 www.vishay.com S09-0870-Rev. C, 18-May-09 3

Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1.0 60 50 0.5 ID = 250 µA e (V) 40 anc 0.0 W) Vari wer ( 30 S(th) -0.5 Po VG 20 -1.0 10 -1.5 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 2 1 nt Duty Cycle = 0.5 e Transiance ctive mped 0.2 Notes: ed Effeermal I 0.1 0.1 PDM zh maliT 0.05 t1 Nor 1. Duty Cyclet,2 D = t1 0.02 t2 2. Per Unit Base = RthJA = 68°C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e Transiance ctive mped 0.2 ed Effeermal I 0.1 0.1 alizTh 0.05 m Nor 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71356. www.vishay.com Document Number: 71356 4 S09-0870-Rev. C, 18-May-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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