Si4686DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Available 0.0095 at VGS = 10 V 18.2 (cid:129) Extremely Low Q WFET® Technology 30 9.2 nC gd 0.014 at VGS = 4.5 V 15 for Low Switching Losses (cid:129) TrenchFET® Power MOSFETs (cid:129) 100 % R Tested g SO-8 APPLICATIONS D S 1 8 D (cid:129) High-Side DC/DC Conversion S 2 7 D - Notebook - Server S 3 6 D G 4 5 D G Top View S Ordering Information:Si4686DY-T1-E3 (Lead (Pb)-free) Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 TC = 25 °C 18.2 TC = 70 °C 14.5 Continuous Drain Current (T = 150 °C) I J TA = 25 °C D 13.8b, c TA = 70 °C 11b, c A Pulsed Drain Current IDM 50 TC = 25 °C 4.3 Continuous Source-Drain Diode Current IS TA = 25 °C 2.5b, c Single-Pulse Avalanche Current IAS 10 L = 0.1 mH Single-Pulse Avalanche Energy EAS 5 mJ TC = 25 °C 5.2 TC = 70 °C 3.3 Maximum Power Dissipation TA = 25 °C PD 3.0b, c W TA = 70 °C 1.9b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 35 42 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 20 24 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 73422 www.vishay.com S09-0228-Rev. B, 09-Feb-09 1

Si4686DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ 31.3 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A VGS = 10 V, ID = 13.8 A 0.0078 0.0095 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 11.4 A 0.011 0.014 Forward Transconductancea gfs VDS = 15 V, ID = 13.8 A 56 S Dynamicb Input Capacitance Ciss 1220 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 230 pF Reverse Transfer Capacitance Crss 98 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 13.8 A 17 26 9.2 14 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 13.8 A 4.1 Gate-Drain Charge Qgd 2.8 Gate Resistance Rg f = 1 MHz 0.8 1.2 Ω Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 15 V, RL = 1.5 Ω 20 30 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 Fall Time tf 8 15 ns Turn-On Delay Time td(on) 13 20 Rise Time tr VDD = 15 V, RL = 1.5 Ω 16 25 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 23 35 Fall Time tf 8 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.3 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2.6 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC I = 2.6 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 12.5 ns Reverse Recovery Rise Time tb 12.5 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73422 2 S09-0228-Rev. B, 09-Feb-09

Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 10 40 VGS = 10 V thru 4 V 8 Current (A) 30 Current (A) 6 Drain 20 Drain 4 -ID -ID TC = 125 °C 10 2 25 °C 3 V - 55 °C 0 0 0.0 0.4 0.8 1.2 1.6 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS -Drain-to-Source Voltage (V) VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 1500 Ciss Ω) 0.012 1200 m VGS = 4.5 V stance ( 0.010 ce (pF) 900 On-Resi 0.008 VGS = 10 V apacitan 600 - DS(on) C -C Coss R 0.006 300 Crss 0.004 0 0 10 20 30 40 50 0 5 10 15 20 25 30 ID -Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 13.8 A ID = 13.8 A V) 8 1.6 e ( oltag VDS = 15 V ance 1.4 VGS = 10 V Gate-to-Source V 46 VDS = 21 V -On-ResistDS(on)(Normalized) 11..02 VGS = 4.5 V - R S G 2 V 0.8 0 0.6 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 Qg -Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73422 www.vishay.com S09-0228-Rev. B, 09-Feb-09 3

Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 0.030 ) e ( ID = 13.8 A c n 0.025 a Current (A) 10 TJ = 150 °C e On-Resist 0.020 ce urc Sour o-So 0.015 TJ = 125 °C -IS Drain-t TJ = 25 °C - n) 0.010 o TJ = 25 °C DS( R 1 0.005 0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS -Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 40 2.2 V) 2.0 W) 30 (S(th) 1.8 ID = 250 µA wer ( VG Po 20 1.6 1.4 10 1.2 1.0 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 1 ms A) ent ( 1 10 ms urr 100 ms C n 1 s ai Dr 0.1 10 s - D DC I 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 100 VDS -Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73422 4 S09-0228-Rev. B, 09-Feb-09

Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 6 5 16 A) 4 ent ( 12 W) n Curr ower ( 3 ai 8 P Dr -D 2 I 4 1 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC -Case Temperature (°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73422 www.vishay.com S09-0228-Rev. B, 09-Feb-09 5

Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 nt Duty Cycle = 0.5 e si e Trandance 0.2 ectivmpe Notes: d Effmal I 0.1 0.1 PDM zeer 0.05 aliTh t1 Norm 0.02 1. Duty Cycle,t 2D = tt12 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e si Trannce malized Effective Thermal Impeda 0.1 000...0125 or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73422. www.vishay.com Document Number: 73422 6 S09-0228-Rev. B, 09-Feb-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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