Si4650DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a, e Qg (Typ.) Definition Channel-1 30 0.018 at VGS = 10 V 8.0 10.5 (cid:129) TrenchFET® Power MOSFET 0.022 at V = 4.5 V 8.0 GS (cid:129) 100 % R and UIS Tested 0.018 at V = 10 V 8.0 g Channel-2 30 GS 10.5 (cid:129) Compliant to RoHS Directive 2002/95/EC 0.022 at V = 4.5 V 8.0 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY (cid:129) Notebook Logic dc-to-dc V (V) VDS (V) Diode ForSwDard Voltage IF (A)a (cid:129) Low Current dc-to-dc 30 0.43 V at 1.0 A 2.8 SO-8 D1 D2 S1/D2 1 8 D1 G1 2 7 D1 S2 3 6 S1/D2 Schottky Diode G1 G2 G2 4 5 S1/D2 Top View Ordering Information: Si4650DY-T1-E3 (Lead (Pb)-free) S1 S2 Si4650DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ± 20 ± 20 TC = 25 °C 8.0e 8.0e Continuous Drain Current (T = 150 °C) TC = 70 °C I 7.8 7.8 J TA = 25 °C D 7.8b, c 7.8b, c TA = 70 °C 6.2b, c 6.2b, c Pulsed Drain Current (10 µs Pulse Width) IDM 30 30 A Source-Drain Current Diode Current TTCA == 2255 °°CC IS 1.28.b8, c 1.28.b8, c Pulsed Source-Drain Current ISM 30 30 Single Pulse Avalanche Current L = 0.1 mH IAS 20 20 Single Pulse Avalanche Energy EAS 20 20 mJ TC = 25 °C 3.1 3.1 Maximum Power Dissipation TTCA == 2750 °°CC PD 2b2, c 2b2, c W TA = 70 °C 1.2b, c 1.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 52 62.5 52 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 35 40 35 40 Notes: a. Based on T = 25 °C. C b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2). e. Package limited. Document Number: 70449 www.vishay.com S10-0105-Rev. D, 18-Jan-10 1

Si4650DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static VGS = 0 V, ID = 1 mA Ch-1 30 Drain-Source Breakdown Voltage VDS V VGS = 0 V, ID = 1 mA Ch-2 30 VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA Ch-1 35 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Ch-1 - 6 VDS = VGS, ID = 1 mA Ch-1 1 3 Gate Threshold Voltage VGS(th) V VDS = VGS, ID = 1 mA Ch-2 1 3 VDS = 0 V, VGS = ± 20 V Ch-1 100 Gate-Body Leakage IGSS µA VDS = 0 V, VGS = ± 20 V Ch-2 100 VDS = 30 V, VGS = 0 V Ch-1 0.001 VDS = 30 V, VGS = 0 V Ch-2 0.06 0.5 Zero Gate Voltage Drain Current IDSS mA VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-1 0.025 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-2 5 20 VDS = 5 V, VGS = 10 V Ch-1 20 On-State Drain Currentb ID(on) A VDS = 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 8 A Ch-1 0.014 0.018 VGS = 10 V, ID = 8 A Ch-2 0.014 0.018 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 4.5 V, ID = 5 A Ch-1 0.017 0.022 VGS = 4.5 V, ID = 5 A Ch-2 0.017 0.022 VDS = 15 V, ID = 8 A Ch-1 40 Forward Transconductanceb gfs S VDS = 15 V, ID = 8 A Ch-2 40 Dynamica Ch-1 1550 Input Capacitance Ciss Channel-1 Ch-2 1550 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 220 Output Capacitance Coss pF Ch-2 275 Channel-2 V = 15 V, V = 0 V, f = 1 MHz Ch-1 80 Reverse Transfer Capacitance Crss DS GS Ch-2 80 VDS = 15 V, VGS = 10 V, ID = 8 A Ch-1 25.5 40 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 8 A Ch-2 25.5 40 Ch-1 10.5 16 Channel-1 Ch-2 10.5 16 V = 15 V, V = 4.5 V, I = 8 A nC DS GS D Ch-1 5 Gate-Source Charge Qgs Ch-2 5 Channel-2 V = 15 V, V = 4.5 V, I = 8 A Ch-1 2.5 Gate-Drain Charge Qgd DS GS D Ch-2 2.5 Ch-1 1.8 3.0 Gate Resistance Rg f = 1 MHz Ω Ch-2 1.8 3.0 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com Document Number: 70449 2 S10-0105-Rev. D, 18-Jan-10

Si4650DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Ch-1 7 14 Turn-On Delay Time td(on) Channel-1 Ch-2 7 14 V = 15 V, R = 3 Ω DD L Ch-1 29 45 Rise Time tr ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 29 45 Ch-1 19 30 Turn-Off Delay Time td(off) Channel-2 V = 15 V, R = 3 Ω Ch-2 19 30 DD L I ≅ 5 A, V = 10 V, R = 1 Ω Ch-1 8 16 Fall Time tf D GEN g Ch-2 8 16 ns Ch-1 32 50 Turn-On Delay Time td(on) Channel-1 Ch-2 32 50 V = 15 V, R = 3 Ω DD L Ch-1 130 200 Rise Time tr ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-2 130 200 Ch-1 19 30 Turn-Off Delay Time td(off) Channel-2 V = 15 V, R = 3 Ω Ch-2 19 30 DD L I ≅ 5 A, V = 4.5 V, R = 1 Ω Ch-1 34 55 Fall Time tf D GEN g Ch-2 34 55 Drain-Source Body Diode Characteristics Ch-1 2.8 Continuous Source-Drain Diode Current IS TC = 25 °C Ch-2 2.8 A Ch-1 30 Pulse Diode Forward Currenta ISM Ch-2 30 IS = 2 A Ch-1 0.77 1.1 Body Diode Voltage VSD V IS = 1 A Ch-2 0.37 0.43 Ch-1 25 40 Body Diode Reverse Recovery Time trr ns Ch-2 23 40 Channel-1 Ch-1 18 30 Body Diode Reverse Recovery Charge Qrr IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-2 13 20 nC Ch-1 14 Reverse Recovery Fall Time ta Channel-2 I = 4 A, dI/dt = 100 A/µs, T = 25 °C Ch-2 11 F J ns Ch-1 11 Reverse Recovery Rise Time tb Ch-2 12 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70449 www.vishay.com S10-0105-Rev. D, 18-Jan-10 3

Si4650DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 1.2 VGS = 10 V thru 4 V 32 0.9 A) A) ent ( 24 ent ( urr urr C C 0.6 n n Drai 16 Drai TC = 25 °C - - D D I I 0.3 8 TC = 125 °C 3 V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.022 2000 Ciss 0.020 1600 Ω) nce ( VGS = 4.5 V pF) sista 0.018 nce ( 1200 e a n-R acit - OS(on) 0.016 VGS = 10 V C - Cap 800 D R 0.014 400 Coss 0.012 0 Crss 0 8 16 24 32 40 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 8 A VDS= 10 V ID = 8 A VGS= 10 V V) 8 ge ( VDS= 15 V e 1.5 olta anc e-to-Source V 46 VDS= 20 V - On-Resistn)(Normalized) 1.2 VGS= 4.5 V Gat S(o - RD 0.9 GS 2 V 0 0.6 0.0 5.2 10.4 15.6 20.8 26.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 70449 4 S10-0105-Rev. D, 18-Jan-10

Si4650DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.05 ID = 8 A 10 0.04 Ω) ent (A) 1 TJ = 150 °C stance ( 0.03 Curr Resi TA = 125 °C ource 0.1 TJ = 25 °C - On- 0.02 S n) - S S(o I D 0.01 R 0.01 TA = 25 °C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 150 ID = 250 µA 0.2 120 V) nce ( - 0.1 ID = 5 mA W) 90 Varia wer ( S(th) - 0.4 Po 60 G V - 0.7 30 - 1.0 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 10 A) nt ( 1 ms e urr C 1 10 ms n ai Dr 100 ms - D I 0.1 1 s 10 s TA = 25 °C DC Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on)isspecified Safe Operating Area, Junction-to-Ambient Document Number: 70449 www.vishay.com S10-0105-Rev. D, 18-Jan-10 5

Si4650DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 11 9 A) Limited by Package nt ( 7 e urr C n ai 4 Dr - D I 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 W) 2.4 W) 0.9 er ( er ( w w Po 1.6 Po 0.6 0.8 0.3 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 70449 6 S10-0105-Rev. D, 18-Jan-10

Si4650DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 Duty Cycle = 0.5 nt Transieance 0.1 00..12 ctive mped 0.05 Notes: Normalized EffeThermal I 0.01 0.02 12P.. PDDMeurt yU Cnyitt1c Bleat,2s De == RthttJ12A = 65 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt Transieance 0.1 00..12 ctive mped 0.05 ed Effeermal I 0.02 zh 0.01 aliT m or N Single Pulse 0.001 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 70449 www.vishay.com S10-0105-Rev. D, 18-Jan-10 7

Si4650DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 1.2 VGS = 10 V thru 4 V 32 0.9 A) A) ent ( 24 ent ( urr urr C C 0.6 n n Drai 16 Drai TC = 25 °C - - D D I I 0.3 8 TC = 125 °C 3 V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.022 2000 Ciss 0.020 1600 Ω) stance ( 0.018 VGS = 4.5 V ce (pF) 1200 Resi citan - On- 0.016 Capa 800 on) VGS = 10 V C - S( RD 0.014 400 Coss 0.012 0 Crss 0 8 16 24 32 40 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 8 A VDS= 10 V ID = 8 A VGS= 10 V V) 8 ge ( VDS= 15 V e 1.5 olta anc e-to-Source V 46 VDS= 20 V - On-Resistn)(Normalized) 1.2 VGS= 4.5 V Gat S(o - RD 0.9 GS 2 V 0 0.6 0.0 5.2 10.4 15.6 20.8 26.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 70449 8 S10-0105-Rev. D, 18-Jan-10

Si4650DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.05 ID = 8 A 10 0.04 Ω) urrent (A) 1 TJ = 150 °C TJ = 25 °C sistance ( 0.03 ce C n-Re TA = 125 °C Sour 0.1 - O 0.02 - on) S S( I D 0.01 R 0.01 TA = 25 °C 0.001 0 0.0 0.4 0.8 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1 150 10-1 120 A) nt ( 10-2 30 V urre 20 V W) 90 e C 10-3 er ( s w ver Po 60 e - R 10-4 R I 30 10-5 10-6 0 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Reverse Current Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 10 A) nt ( 1 ms e urr C 1 10 ms n ai Dr 100 ms - D I 0.1 1 s 10 s TA = 25 °C DC Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on)isspecified Safe Operating Area, Junction-to-Ambient Document Number: 70449 www.vishay.com S10-0105-Rev. D, 18-Jan-10 9

Si4650DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 11 9 A) Limited by Package nt ( 7 e urr C n ai 4 Dr - D I 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 W) 2.4 W) 0.9 er ( er ( w w Po 1.6 Po 0.6 0.8 0.3 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 70449 10 S10-0105-Rev. D, 18-Jan-10

Si4650DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 Duty Cycle = 0.5 nt Transieance 0.1 00..12 ctive mped 0.05 Notes: Normalized EffeThermal I 0.01 0.02 12P.. PDDMeurt yU Cnyitt1c Bleat,2s De == RthttJ12A = 65 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt Transieance 0.1 00..12 ctive mped 0.05 ed Effeermal I 0.02 zh 0.01 aliT m or N Single Pulse 0.001 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70449. Document Number: 70449 www.vishay.com S10-0105-Rev. D, 18-Jan-10 11

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