Si4569DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Available 0.027 at VGS = 10 V 6.0 (cid:129) TrenchFET® Power MOSFET N-Channel 40 9.6 0.032 at VGS = 4.5 V 4.8 (cid:129) 100 % Rg and UIS Tested P-Channel - 40 0.029 at VGS = - 10 V - 6.0 21 APPLICATIONS 0.039 at VGS = - 4.5 V - 4.9 (cid:129) CCFL Inverter SO-8 D1 S2 S1 1 8 D1 G1 2 7 D1 G2 S2 3 6 D2 G1 G2 4 5 D2 Top View S1 D2 Ordering Information:Si4569DY-T1-E3 (Lead (Pb)-free) Si4569DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 40 - 40 V Gate-Source Voltage VGS ± 16 TC = 25 °C 7.6 - 7.9 Continuous Drain Current (T = 150 °C) TC = 70 °C I 6.0 - 6.3 J D TA = 25 °C 6.0b, c - 6.1b, c TA = 70 °C 4.8b, c - 4.9b, c Pulsed Drain Current (10 µs Pulse Width) IDM 20 - 20 A Source-Drain Current Diode Current TC = 25 °C IS 2.6 - 2.6 TA = 25 °C 1.6b, c - 1.6b, c Pulsed Source-Drain Current ISM 20 - 20 Single Pulse Avalanche Current IAS 10 20 L = 0.1 mH Single Pulse Avalanche Energy EAS 5 20 mJ TC = 25 °C 3.1 3.2 Maximum Power Dissipation TC = 70 °C PD 2 2.1 W TA = 25 °C 2b, c 2b, c TA = 70 °C 1.28b, c 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 49 62.5 47 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 29 38 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 73586 www.vishay.com S09-0393-Rev. B, 09-Mar-09 1

Si4569DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static VGS = 0 V, ID = 250 µA N-Ch 40 Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch 37 V Temperature Coefficient ΔV /T DS DS J ID = - 250 µA P-Ch - 38 V ID = 250 µA N-Ch - 5 V Temperature Coefficient ΔV /T GS(th) GS(th) J ID = - 250 µA P-Ch 4.0 VDS = VGS, ID = 250 µA N-Ch 0.6 2.0 Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA P-Ch - 0.8 - 2.2 N-Ch 100 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V nA P-Ch - 100 VDS = 40 V, VGS = 0 V N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 On-State Drain Currentb ID(on) A VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 6 A N-Ch 0.022 0.027 VGS = - 10 V, ID = - 6 A P-Ch 0.024 0.029 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 4.5 V, ID = 4.8 A N-Ch 0.026 0.032 VGS = - 4.5 V, ID = - 4.9 A P-Ch 0.031 0.039 VDS = 15 V, ID = 6 A N-Ch 20 Forward Transconductanceb gfs S VDS = - 15 V, ID = - 6 A P-Ch 17 Dynamica N-Ch 855 Input Capacitance Ciss N-Channel P-Ch 1505 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 105 Output Capacitance Coss pF P-Ch 230 P-Channel V = - 20 V, V = 0 V, f = 1 MHz N-Ch 65 Reverse Transfer Capacitance Crss DS GS P-Ch 175 VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 21 32 Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 41 62 N-Ch 9.6 14.5 N-Channel P-Ch 21 31 V = 20 V, V = 4.5 V, I = 5 A nC DS GS D N-Ch 2.3 Gate-Source Charge Qgs P-Ch 4.5 P-Channel V = - 20 V, V = - 4.5 V, I = - 5 A N-Ch 3.2 Gate-Drain Charge Qgd DS GS D P-Ch 9.2 N-Ch 2.5 3.8 Gate Resistance Rg f = 1 MHz Ω P-Ch 6.5 10 www.vishay.com Document Number: 73586 2 S09-0393-Rev. B, 09-Mar-09

Si4569DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica N-Ch 6 12 Turn-On Delay Time td(on) N-Channel P-Ch 7 14 V = 20 V, R = 4 Ω DD L N-Ch 11 20 Rise Time tr ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω P-Ch 15 25 N-Ch 24 36 Turn-Off Delay Time td(off) P-Channel V = - 20 V, R = 4 Ω P-Ch 51 77 DD L I ≅ - 5 A, V = - 10 V, R = 1 Ω N-Ch 6 12 Fall Time tf D GEN g P-Ch 54 81 ns N-Ch 12 20 Turn-On Delay Time td(on) N-Channel P-Ch 26 40 V = 20 V, R = 4 Ω DD L N-Ch 60 90 Rise Time tr ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω P-Ch 105 160 N-Ch 22 33 Turn-Off Delay Time td(off) P-Channel V = - 20 V, R = 4 Ω P-Ch 60 90 DD L I ≅ - 5 A, V = - 4.5 V, R = 1 Ω N-Ch 5 10 Fall Time tf D GEN g P-Ch 60 90 Drain-Source Body Diode Characteristics N-Ch 2.6 Continuous Source-Drain Diode Current IS TC = 25 °C P-Ch - 2.6 A N-Ch 20 Pulse Diode Forward Currenta ISM P-Ch - 20 IS = 1.5 A N-Ch 0.73 1.2 Body Diode Voltage VSD V IS = - 1.6 A P-Ch - 0.73 - 1.2 N-Ch 26 40 Body Diode Reverse Recovery Time trr ns P-Ch 30 45 N-Channel N-Ch 21 32 Body Diode Reverse Recovery Charge Qrr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch 24 36 nC N-Ch 13 Reverse Recovery Fall Time ta P-Channel I = - 5 A, dI/dt = - 100 A/µs, T = 25 °C P-Ch 15 F J ns N-Ch 13 Reverse Recovery Rise Time tb P-Ch 15 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73586 www.vishay.com S09-0393-Rev. B, 09-Mar-09 3

Si4569DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 2.0 VGS = 10 thru 3 V 16 1.6 A) A) nt ( nt ( e e urr 12 urr 1.2 C C n n ai ai Dr Dr - 8 - 0.8 D D I I TC = 125 °C 4 0.4 25 °C 2 V - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 1400 0.028 1120 e ()Ω VGS = 4.5 V pF) nc 0.026 e ( Ciss esista citanc 840 R 0.024 a n- ap O C - S(on) 0.022 VGS = 10 V C - 560 D R 0.020 280 Crss Coss 0.018 0 0 4 8 12 16 20 0 8 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.0 ID = 5 A ID = 5 A V) e ( 8 VDS = 10 V 1.7 g Volta ance VGS = 4.5 V Gate-to-Source 46 VDS = 20 V VDS = 30 V - On-Resiston)(Normalized) 11..14 VGS = 10 V - RDS( S G 2 0.8 V 0 0.5 0.0 4.4 8.8 13.2 17.6 22.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 73586 4 S09-0393-Rev. B, 09-Mar-09

Si4569DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100.000 0.15 )Ω ID = 6 A e ( c 10.000 an 0.12 st A) esi Current ( 1.000 TJ = 150 °C ce On-R 0.09 e ur - SourcS 0.100 TJ = 25 °C Drain-to-So 0.06 TA = 125 °C I 0.010 - n) 0.03 o DS( TA = 25 °C R 0.001 0.00 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 ID = 250 µA 0.2 40 V) 0.0 ID = 5 mA ce ( W) 30 Varian - 0.2 wer ( h) Po 20 S(t G - 0.4 V - 0.6 10 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 10 Limited by RDS(on)* A) nt ( e Curr 1 1 ms n ai Dr 10 ms - D I 0.1 100 ms 1 s TA = 25 °C 10 s Single Pulse DC 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73586 www.vishay.com S09-0393-Rev. B, 09-Mar-09 5

Si4569DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 8 A) nt ( 6 e urr C n ai 4 Dr - D I 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 W) W) Dissipation ( 12..64 Dissipation ( 00..69 wer wer Po Po 0.8 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 73586 6 S09-0393-Rev. B, 09-Mar-09

Si4569DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 Duty Cycle = 0.5 nt e e Transiedance 0.2 ctivmp 0.1 Notes: ed Effeermal I 0.1 0.05 PDM zh maliT t1 Nor 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 nt e e Transiedance Duty Cycle = 0.5 ctivmp 0.2 ed Effeermal I 0.1 0.1 zh aliT m 0.05 or N 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73586 www.vishay.com S09-0393-Rev. B, 09-Mar-09 7

Si4569DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 2.0 VGS = 10 thru 4 V 16 1.6 A) A) nt ( nt ( e e urr 12 urr 1.2 C C n n ai ai Dr Dr - 8 - 0.8 D D TC = 125 °C I I 4 0.4 25 °C - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.8 1.6 2.4 3.2 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 2500 )Ω 0.035 2000 ance ( VGS = 4.5 V e (pF) Ciss sist 0.030 anc 1500 Re cit n- pa O a - S(on) 0.025 VGS = 10 V C - C 1000 D R 0.020 500 Coss Crss 0.015 0 0 4 8 12 16 20 0 8 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 6 A ID = 6 A V) 1.6 e ( 8 VGS = 10 V urce Voltag 6 VDS = 2V0 DVS = 10 V Resistance zed) 1.4 VGS = 4.5 V - Gate-to-So 4 VDS = 30 V R - On-DS(on)(Normali 11..02 S VG 2 0.8 0 0.6 0 9 18 27 36 45 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 73586 8 S09-0393-Rev. B, 09-Mar-09

Si4569DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.15 )Ω ID = 6 A e ( nc 0.12 a nt (A) Resist urre TJ = 150 °C TJ = 25 °C On- 0.09 e C 10 ce urc our o S 0.06 - S n-to- TA = 125 °C S ai I Dr - n) 0.03 S(o TA = 25 °C D R 1 0.00 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 50 0.5 40 ID = 250 µA V) ce ( 0.3 W) 30 Varian ID = 5 mA wer ( S(th) 0.1 Po 20 G V - 0.1 10 - 0.3 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 10 Limited by RDS(on)* A) nt ( 1 ms e Curr 1 n 10 ms ai Dr - 100 ms D I 0.1 1 s TA = 25 °C 10 s Single Pulse DC 0.01 0.0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73586 www.vishay.com S09-0393-Rev. B, 09-Mar-09 9

Si4569DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 8 A) nt ( 6 e urr C n ai 4 Dr - D I 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 W) W) Dissipation ( 12..64 Dissipation ( 00..69 Power Power 0.8 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com Document Number: 73586 10 S09-0393-Rev. B, 09-Mar-09

Si4569DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 Duty Cycle = 0.5 nt e e Transiedance 0.2 ctivmp 0.1 Notes: ed Effeermal I 0.1 0.05 PDM zh maliT t1 Nor 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = RthJA = 120 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 nt e e Transiedance Duty Cycle = 0.5 ctivmp 0.2 ed Effeermal I 0.1 0.1 zh maliT 0.05 or N 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73586. Document Number: 73586 www.vishay.com S09-0393-Rev. B, 09-Mar-09 11

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