Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Definition 0.0145 at VGS = 10 V 9.6 (cid:129) TrenchFET® Power MOSFET N-Channel 20 0.017 at VGS = 4.5 V 8.6 (cid:129) Compliant to RoHS directive 2002/95/EC P-Channel - 20 0.033 at VGS = - 4.5 V - 6.2 APPLICATIONS 0.050 at VGS = - 2.5 V - 5 (cid:129) Level Shift (cid:129) Load Switch SO-8 S1 1 8 D1 D1 S2 G 1 2 7 D1 S2 3 6 D2 G2 G 2 4 5 D2 G1 Top View Ordering Information: Si4511DY-T1-E3 (Lead (Pb)-free) Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Unit Drain-Source Voltage V 20 - 20 DS V Gate-Source Voltage V ± 16 ± 12 GS T = 25 °C 9.6 7.2 - 6.2 - 4.6 Continuous Drain Current (TJ = 150 °C)a, b TA = 70 °C ID 7.7 5.8 - 4.9 - 3.7 A A Pulsed Drain Current I 40 - 40 DM Continuous Source Current (Diode Conduction)a IS 1.7 0.9 - 1.7 - 0.9 T = 25 °C 2 1.1 2 1.1 Maximum Power Dissipationa TA = 70 °C PD 1.3 0.7 1.3 0.7 W A Operating Junction and Storage Temperature Range T , T - 55 to 150 °C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit t ≤ 10 s 50 62.5 50 62.5 Maximum Junction-to-Ambienta RthJA Steady State 85 110 90 110 °C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 30 35 thJF Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t ≤ 10 s. Document Number: 72223 www.vishay.com S09-0867-Rev. E, 18-May-09 1

Si4511DY Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS = VGS, ID = 250 µA N-Ch 0.6 1.8 Gate Threshold Voltage VGS(th) V VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.4 VDS = 0 V, VGS = ± 16 V N-Ch ± 100 Gate-Body Leakage IGSS nA VDS = 0 V, VGS = ± 12 V P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 5 VDS = 5 V, VGS = 10 V N-Ch 40 On-State Drain Currentb ID(on) A VDS = - 5 V, VGS = - 4.5 V P-Ch - 40 VGS = 10 V, ID = 9.6 A N-Ch 0.0115 0.0145 VGS = - 4.5 V, ID = - 6.2 A P-Ch 0.022 0.033 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 4.5 V, ID = 8.6 A N-Ch 0.0135 0.017 VGS = - 2.5 V, ID = - 5 A P-Ch 0.035 0.050 VDS = 15 V, ID = 9.6 A N-Ch 33 Forward Transconductanceb gfs S VDS = - 15 V, ID = - 6.2 A P-Ch 17 IS = 1.7 A, VGS = 0 V N-Ch 0.8 1.2 Diode Forward Voltagb VSD V IS = - 1.7 A, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamica N-Ch 11.5 18 Total Gate Charge Qg N-Channel P-Ch 17 20 V = 10 V, V = 4.5 V, I = 9.6 A DS GS D N-Ch 3.7 Gate-Source Charge Qgs nC P-Ch 4.1 P-Channel V = - 10 V, V = - 4.5 V, I = - 6.2 A N-Ch 3.3 Gate-Drain Charge Qgd DS GS D P-Ch 4.3 N-Ch 12 20 Turn-On Delay Time td(on) N-Channel P-Ch 25 40 V = 10 V, R = 10 Ω DD L N-Ch 12 20 Rise Time tr ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Ch 30 45 N-Ch 55 85 Turn-Off Delay Time td(off) P-Channel ns V = - 10 V, R = 10 Ω P-Ch 70 105 DD L I ≅ - 1 A, V = - 4.5 V, R = 6 Ω N-Ch 15 25 Fall Time tf D GEN g P-Ch 50 75 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 50 100 Source-Drain Reverse Recovery Time trr IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 40 80 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72223 2 S09-0867-Rev. E, 18-May-09

Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 40 VG S = 10 V thru 4 V 3 V 32 32 -)A( tnerruC niarD D 1264 -) A ( t n e r r u C n i a r D ID 1264 T C = 125 °C I 8 8 25 °C 2 V - 55 °C 0 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 2000 ΩeR- )-( ecnatsinO sS(on) 00..001105 VG S = 4.5 V VG S = 10 V i c C-) F p ( e c n a t a p a C 11826000000 Co ss Ciss RD 0.005 Crss 400 0.000 0 0 8 16 24 32 40 0 4 8 12 16 20 ID- Drain Current (A) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 ) ( g a l o e c r S - o - t G -V e t V u o t e a 468 VIDD =S 9=. 61 0A V sistanceeRnOR-- ()noSD)dezilamorN( 111...024 VID G =S 9=. 61 0A V SG 2 0.8 V 0 0.6 0 3 6 9 12 15 18 21 24 - 50 - 25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ- Junction Temperature ( °C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72223 www.vishay.com S09-0867-Rev. E, 18-May-09 3

Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 0.05 ) 0.04 -) A ( t n e r r u C e c r u o S IS 10 T J = 150 °C T J = 25 °C -( ecnatsiseR-nO )no(SD 00..0023 ID = 3 A ID = 9.6 A R 0.01 1 0.00 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD- Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 30 0.2 ID = 250 µA 25 ) V ( e c n a i r a V - 00..02 w ) W ( r e 2105 G ) h t ( S - 0.4 o P 10 V - 0.6 5 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100 600 TJ- Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* ID M Limited P(t) = 0.0001 10 A) P(t) = 0.001 nt ( e Curr 1 ID (on) P(t) = 0.01 n Limited ai Dr P(t) = 0.1 I - D 0.1 STin Cg =le 2P5u °lsCe PP((tt)) == 110 DC BVDSS Limited 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified DS GS DS(on) Safe Operating Area www.vishay.com Document Number: 72223 4 S09-0867-Rev. E, 18-May-09

Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 e v i t c e f f E d e z i l a m t n e i s n a r T e c n a d e p m I l a m r e h T 0.1 000D...u210t 5y Cycle = 0.5 NPo DteMs : t 1 r o N 0.02 1. Duty Cyclet, 2 D = t 1 t 2 2. Per Unit Base = Rt hJA = 85 °C Single Pulse 3. TJ M − TA = PD MZ t hJA (t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave P ulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 e v i t c e f f E z a d e i l m t n e i s n a r T e c n a d e p m I l a m r e T h 0.1 000D...u210t 5y Cycle = 0.5 N r o 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72223 www.vishay.com S09-0867-Rev. E, 18-May-09 5

Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 40 VGS = 5 V thru 3.5 V 3 V T C = - 55 °C 32 32 25 °C )A -( nrruC narD tei 1264 2.5 V ) A ( t r r u C n a D n e i r 1264 125 °C ID 2 V - D I 8 8 1.5 V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 3000 2500 Ω-( )ecnatsiseR-nO 000...000468 VG S = 2.5 V C-) F p ( e c n a t i c a p a C 12500000 Ci ss )no(S VG S = 4.5 V 1000 Co ss D R 0.02 500 Cr ss 0.00 0 0 8 16 24 32 40 0 4 8 12 16 20 ID- Drain Current (A) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VD S = 10 V VG S = 4.5 V ID = 6.2 A ID = 6.2 A )V 4 1.4 ( eg e a c tlo na V ecruoS-ot-etaG 23 -tsiseR-nO )no(SD) d e z i l a m r o N ( 11..02 - R SG 1 0.8 V 0 0.6 0 3 6 9 12 15 18 - 50 - 25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com Document Number: 72223 6 S09-0867-Rev. E, 18-May-09

Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 40 0.10 Ω) 0.08 -) A ( t n e r r u C e c r u o S 10 T J = 150 °C TJ = 25 °C -( ecnatsiseR-nO )no 00..0046 ID = 6.2 A IS (SD R 0.02 1 0.00 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD-Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 30 0.4 25 ) V ( e c n a i r a V 0.2 ID = 250 µA ) W ( r e w 1250 h) 0.0 o P V GS(t 10 - 0.2 5 - 0.4 0 - 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100 600 TJ- Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* ID M Limited 10 A) P(t) = 0.001 nt ( e P(t) = 0.01 Curr 1 ain LIiD m(oitne)d P(t) = 0.1 Dr - D P(t) = 1 I 0.1 STin Cg =le 2P5u °lsCe P(t) = 10 DC BVDSS Limited 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified DS GS DS(on) Safe Operating Area Document Number: 72223 www.vishay.com S09-0867-Rev. E, 18-May-09 7

Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 e e v i t c f f E d e z i l a m t n e i s n a r T e c n a d e p m I l a m r e h T 0.1 D000...u210t 5y Cycle = 0.5 NPo DteMs : t 1 r o N 0.02 1. Duty Cyclet, 2 D = t 1 t 2 2. Per Unit Base = Rt hJA = 85 °C Single Pulse 3. TJ M − TA = PD MZ t hJA (t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave P ulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 e v i t c e f f E d e z i l a m t n e i s n a r T e c n a d e p m I l a m r e h T 0.1 000D...u210t 5y Cycle = 0.5 r o N 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave P ulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72223. www.vishay.com Document Number: 72223 8 S09-0867-Rev. E, 18-May-09

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