Si4456DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A)a Q (Typ.) DS DS(on) D g Available 0.0038 at V = 10 V 33 (cid:129) TrenchFET® Gen II Power MOSFET GS 40 37.5 nC 0.0045 at VGS = 4.5 V 31 (cid:129) 100 % Rg and UIS Tested APPLICATIONS (cid:129) Secondary Rectification (cid:129) Point of Load SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information:Si4456DY-T1-E3 (Lead (Pb)-free) Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 T = 25 °C 33 C T = 70 °C 27 Continuous Drain Current (T = 150 °C) C I J T = 25 °C D 23b, c A T = 70 °C 18b, c A A Pulsed Drain Current IDM 70 T = 25 °C 7.0 Continuous Source-Drain Diode Current TC = 25 °C IS 3.0b, c A Avalanche Current IAS 40 L = 0.1 mH Single Pulse Avalanche Energy EAS 80 mJ T = 25 °C 7.8 C T = 70 °C 5.0 Maximum Power Dissipation TC = 25 °C PD 3.5b, c W A T = 70 °C 2.2b, c A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 29 35 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 73852 www.vishay.com S09-0138-Rev. B, 02-Feb-09 1

Si4456DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VVGDSS (tThe) mTepmerpaeturaretu Creo Cefofiecfifeicnitent ΔVΔVGSD(Sth/T)/JTJ ID = 250 µA -5 47 mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS =V 4D0S V =, V40G SV ,= V 0G VS, =T J0 =V 5 5 °C 110 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VVGGSS == 41.05 VV,, IIDD == 2105 AA 00..00003317 00..00003485 Ω Forward Transconductancea gfs VDS = 15 V, ID = 20 A 110 S Dynamicb Input Capacitance Ciss 5670 Output Capacitance Coss VDS = 20 V, VGS = 0 V, f = 1 MHz 621 pF Reverse Transfer Capacitance Crss 287 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 20 A 81 122 37.5 57 nC Gate-Source Charge Qgs VDS = 20 V, VGS = 4.5 V, ID = 20 A 17 Gate-Drain Charge Qgd 11 Gate Resistance Rg f = 1 MHz 1.05 1.6 Ω Turn-On Delay Time td(on) 145 220 Rise Time tr VDD = 20 V, RL = 2 Ω 208 320 Turn-Off DelayTime td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 56 85 Fall Time tf 15 23 ns Turn-On Delay Time td(on) 21 32 Rise Time tr VDD = 20 V, RL = 2 Ω 58 90 Turn-Off DelayTime td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 55 85 Fall Time tf 8 15 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C 7 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 3 A 0.71 1.1 V Body Diode Reverse Recovery Time trr 38 60 ns Body Diode Reverse Recovery Charge Qrr I = 13 A, dI/dt = 100 A/µs, T = 25 °C 42 65 nC Reverse Recovery Fall Time ta F J 21 ns Reverse Recovery Rise Time tb 17 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73852 2 S09-0138-Rev. B, 02-Feb-09

Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 70 1.2 VGS = 10 V thru 4 V 56 0.9 )A( tnerruC niarD -ID 2482 )A( tnerruC niarD -ID 00..36 TC = 25 °C 14 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0045 7000 Ciss Ω) 0.0041 5600 m ( e VGS = 4.5 V )F c p na 0.0037 ( e 4200 tsis nac eR itc -n ap O 0.0033 a 2800 -)no - CC (SD VGS = 10 V R 0.0029 1400 Coss Cr ss 0.0025 0 0 10 20 30 40 50 60 0 8 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 ID = 20 A VG S = 10 V, ID = 20 A )V e( 8 1.4 tl ecoSgaoVru 6 VDS =V 3D0SV VD=S 2 0= V10 V ecnsiatseR-n )dezilam 1.2 VG S = 4.5 V, ID = 20 A t-eG-ota 4 O - )no(SoN(r 1.0 - RD S G 2 0.8 V 0 0.6 0 17 34 51 68 85 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73852 www.vishay.com S09-0138-Rev. B, 02-Feb-09 3

Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 100 0.020 Ω) ( e 10 cna 0.016 )A TA = 150 °C tsis ( tn eR erruC 1 -nO e 0.012 ec cru ruoS 0.1 oS-o 0.008 - t-n TA = 125 °C S ia I TA = 25 °C rD 0.01 - 0.004 )n o (S RD TA = 25 °C 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 )V - 0.1 ) W 120 V( t(SG)h - 0.4 ID = 5 mA r e w o ( P 80 ID =250 µA - 0.7 40 - 1.0 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 A) 1 ms ( tn 10 ms e rru C nia 1 100 ms rD - D 1 s I 0.1 10 s TA = 25 °C DC Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73852 4 S09-0138-Rev. B, 02-Feb-09

Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 40 32 )A ( tne 24 rru C n ia rD 16 - D I 8 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 10 2.0 8 1.6 W) 6 W) 1.2 r (ewoP 4 r (ewoP 0.8 2 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73852 www.vishay.com S09-0138-Rev. B, 02-Feb-09 5

Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted A 1 e d t n e i s n a r T e v i t c f f E e i l a m r o N z m I e e c n a d e p l a m r h T 0.1 N1Po. Dt eDMsu :t y Cytc1 l e, tD2 = t1 t2 2. Per Unit Base = Rt hJA = 60 °C/W 3. TJ M – T = PD MZ thJA (t) 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 e d m t n e i s n a r T e v i t c f f E e z i l a m I e e c n a d e p l a m r h T 0.1 000..2.105 r o N 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73852. www.vishay.com Document Number: 73852 6 S09-0138-Rev. B, 02-Feb-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SI4456DY-T1-E3 SI4456DY-T1-GE3