Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Available 0.0017 at VGS = 4.5 V 50 (cid:129) TrenchFET® Power MOSFET 12 0.002 at VGS = 2.5 V 46 56 nC (cid:129) 100 % Rg Tested 0.0027 at VGS = 1.8 V 40 (cid:129) 100 % UIS Tested APPLICATIONS (cid:129) POL (cid:129) DC/DC SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information:Si4448DY-T1-E3 (Lead (Pb)-free) Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 12 DS V Gate-Source Voltage V ± 8 GS T = 25 °C 50 C T = 70 °C 40 Continuous Drain Current (T = 150 °C) C I J TA = 25 °C D 32b, c TA = 70 °C 26b, c A Pulsed Drain Current I 70 DM T = 25 °C 7 Continuous Source-Drain Diode Current TCA = 25 °C IS 3b, c Single Pulse Avalanche Current I 20 L = 0.1 mH AS Avalanche Energy E 20 mJ AS T = 25 °C 7.8 C T = 70 °C 5.0 Maximum Power Dissipation TCA = 25 °C PD 3.5b, c W TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 29 35 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 69653 www.vishay.com S09-0138-Rev. B, 02-Feb-09 1

Si4448DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V VDS Temperature Coefficient ΔVDS/TJ 14 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 3.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 12 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 40 A VGS = 4.5 V, ID = 20 A 0.0014 0.0017 Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 15 A 0.0016 0.0020 Ω VGS = 1.8 V, ID = 10 A 0.0022 0.0027 Forward Transconductancea gfs VDS = 6 V, ID = 20 A 190 S Dynamicb Input Capacitance Ciss 12350 Output Capacitance Coss VDS = 6 V, VGS = 0 V, f = 1 MHz 2775 pF Reverse Transfer Capacitance Crss 1590 Total Gate Charge Qg VDS = 6 V, VGS = 4.5 V, ID = 10 A 99 150 56 85 nC Gate-Source Charge Qgs VDS = 6 V, VGS = 2.5 V, ID = 10 A 10.3 Gate-Drain Charge Qgd 13.4 Gate Resistance Rg f = 1 MHz 0.75 1.5 Ω Turn-On Delay Time td(on) 38 70 Rise Time tr VDD = 6 V, RL = 0.6 Ω 22 40 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 240 400 Fall Time tf 33 55 ns Turn-On Delay Time td(on) 20 40 Rise Time tr VDD = 6 V, RL = 0.6 Ω 11 22 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 8 V, Rg = 1 Ω 100 170 Fall Time tf 11 22 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 7 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 3 A 0.54 1.1 V Body Diode Reverse Recovery Time trr 84 140 ns Body Diode Reverse Recovery Charge Qrr 93 150 nC I = 10 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 28 ns Reverse Recovery Rise Time tb 56 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69653 2 S09-0138-Rev. B, 02-Feb-09

Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 70 2.0 VGS=5thru1.5V 56 1.6 A) A) ent ( 42 ent ( 1.2 Curr Curr TC=25 °C n n Drai 28 Drai 0.8 - - ID ID TC=125 °C 14 0.4 1V TJ= - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 0.3 0.6 0.9 1.2 1.5 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0025 16 000 VGS=1.8V Ciss 0.0022 12 800 Ω) ce ( F) n p - On-Resista 00..00001169 VGS=2.5V VGS=4.5V Capacitance ( 69460000 S(on) C - Coss D R 0.0013 3200 Crss 0.0010 0 0 14 28 42 56 70 0 2 4 6 8 10 12 ID- Drain Current (A) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 4.5 1.5 ID=10A VDS=4V ID=20A V) 3.6 VGS=1.8V e ( 1.3 g e Source Volta 2.7 VDS=6V VDS=8V On-Resistanc malized) 1.1 VGS=4.5V Gate-to- 1.8 - DS(on)(Nor - R 0.9 GS 0.9 V 0.0 0.7 0 22 44 66 88 110 - 50 - 25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69653 www.vishay.com S09-0138-Rev. B, 02-Feb-09 3

Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.010 ID=20A 10 TJ=150 °C 0.008 Ω) A) e ( urrent ( 1 TJ=25 °C sistanc 0.006 C e ce n-R - Sour 0.1 - Oon) 0.004 IS DS( TA=125 °C 0.01 R 0.002 TA=25 °C 0.001 0 0 0.2 0.4 0.6 0.8 0 1 2 3 4 5 VSD- Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 200 160 0.1 V) ( nce W) 120 a ( Vari - 0.1 wer h) ID=5mA Po 80 S(t G V - 0.3 40 ID=250 µA - 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ- Temperature (°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 1ms 10 10ms A) nt ( e urr 100ms n C 1 ai 1s Dr - 10s D I DC 0.1 TA=25 °C SinglePulse 0.01 0.01 0.1 1 10 100 VDS- Drain-to-Source Voltage (V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 69653 4 S09-0138-Rev. B, 02-Feb-09

Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 55 44 A) nt ( 33 e urr C n Drai 22 - D I 11 0 0 25 50 75 100 125 150 TC- Case Temperature (°C) Current Derating* 10 2.0 8 1.6 W) 6 W) 1.2 er ( er ( w w o o P 4 P 0.8 2 0.4 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC- Case Temperature (°C) TA- Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69653 www.vishay.com S09-0138-Rev. B, 02-Feb-09 5

Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 nt e DutyCycle=0.5 Transiance ctivemped 0.2 Notes: eI edEffermal 0.1 0.1 PDM alizTh t1 Norm 0.05 1.DutyCyclet,2D= tt12 2.PerUnitBase=RthJA=80 °C/W 0.02 3.TJM- TA=PDMZthJA(t) 4.SurfaceMounted SinglePulse 0.01 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 nt e DutyCycle=0.5 Transiance ctivemped 0.2 eI edEffermal 0.1 0.1 zh aliT m 0.05 or N 0.02 SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69653. www.vishay.com Document Number: 69653 6 S09-0138-Rev. B, 02-Feb-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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