(cid:5)(cid:6)(cid:7)(cid:2)(cid:8)(cid:9)(cid:10)(cid:11)(cid:11) Si4435DYPbF HEXFET(cid:1)(cid:1)Power MOSFET (cid:2) Ultra Low On-Resistance A (cid:2) P-Channel MOSFET S 1 8 D V = -30V (cid:2) Surface Mount DSS S 2 7 D (cid:2) Available in Tape & Reel (cid:2) Lead-Free S 3 6 D G 4 5 D RDS(on) = 0.020Ω Top View Description These P-channel HEXFET(cid:1)(cid:2)Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, SO-8 infrared, or wave soldering technique(cid:3)(cid:4) (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:14)(cid:6)(cid:14)(cid:9)(cid:15)(cid:11)(cid:7)(cid:13)(cid:16)(cid:17)(cid:3) Parameter Max. Units VDS Drain- Source Voltage -30 V I @ T = 25°C Continuous Drain Current, V @ -10V -8.0 D A GS I @ T = 70°C Continuous Drain Current, V @ -10V -6.4 A D A GS I Pulsed Drain Current (cid:1) -50 DM P @T = 25°C Power Dissipation 2.5 D A (cid:1) P @T = 70°C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/°C V Gate-to-Source Voltage ± 20 V GS TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Max. Units RθJA Maximum Junction-to-Ambient(cid:1) 50 °C/W www.irf.com 1 09/30/04

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.019 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance –––––– 00..00125600..002305 Ω VVGGSS == --41.05VV,, IIDD == --85..00AA (cid:4)(cid:4) VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 11 ––– S VDS = -15V, ID = -8.0A I Drain-to-Source Leakage Current ––– ––– -10 (cid:14)(cid:2) VDS = -24V, VGS = 0V DSS ––– ––– -10 VDS = -15V, VGS = 0V, TJ = 70°C (cid:13) Gate-to-Source Forward Leakage ––– ––– -100 (cid:15)(cid:2) VGS = -20V (cid:1)(cid:2)(cid:2) Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 40 60 ID = -4.6A Qgs Gate-to-Source Charge ––– 7.1 ––– nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 ––– VGS = -10V (cid:4) td(on) Turn-On Delay Time ––– 16 24 VDD = -15V, VGS = -10V (cid:4) tr Rise Time ––– 76 110 (cid:15)(cid:10) ID = -1.0A td(off) Turn-Off Delay Time ––– 130 200 RG = 6.0Ω tf Fall Time ––– 90 140 RD = 15Ω Ciss Input Capacitance ––– 2320 ––– VGS = 0V Coss Output Capacitance ––– 390 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (cid:4)(cid:4)(cid:4) (cid:4)(cid:4)(cid:4) (cid:3)2.5 MOSFET symbol D (Body Diode) showing the (cid:2) ISM Pulsed Source Current (cid:4)(cid:4)(cid:4) (cid:4)(cid:4)(cid:4) (cid:3)50 integral reverse G (Body Diode) (cid:1) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V(cid:3)(cid:4) trr Reverse Recovery Time ––– 34 51 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 33 50 nC di/dt = -100A/µs (cid:4) (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:2)(cid:5)Repetitive rating; pulse width limited by (cid:1)(cid:5)(cid:5)Surface mounted on FR-4 board, t(cid:5)≤ (cid:9)(cid:10)(cid:11)(cid:12)(cid:8) max. junction temperature. (cid:3) Pulse width(cid:5)≤ 300µs; duty cycle ≤(cid:5)(cid:6)(cid:7)(cid:8) 2 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) 1000 1000 VGS VGS TOP -15V TOP -15V -10V -10V urrent (A) 100 BOTTOM------754432......055057VVVVVV urrent (A) 100 BOTTOM------754432......055057VVVVVV C C e e c c ur ur o 10 o 10 S S o- o- n-t n-t Drai Drai -2.70V -I , D 1 -2.70V -I , D 1 20µs PULSE WIDTH 20µs PULSE WIDTH T J = 25°C T J = 150°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 -VD S , Drain-to-Source Voltage (V) -VD S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID=-8.0A e c nt (A) TJ = 25 ° C sistan e e 1.5 -I , Drain-to-Source CurrD 10 V20 D µ Ss =P U-1TL5JS V E= W15ID0 °T CH R , Drain-to-Source On RDS(on)(Normalized) 01..50 VGS=-10V 1 0.0 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V , Gate-to-Source Voltage (V) T , Junction Temperature ( ° C) GS J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) 3500 20 VGS=0V, f = 1MHz ID=-4.6A C =C + C C SHORTED 3000 Cirssss =Cggsd gd , ds V) VDS=-15V Coss=Cds + Cgd e ( 16 g pF) 2500 Ciss olta ance ( 2000 urce V 12 cit So pa 1500 o- Ca e-t 8 C, 1000 Gat 500 Coss V , GS 4 - Crss 0 0 1 10 100 0 10 20 30 40 50 60 -VD S , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) A) ent ( A)A) ain Curr 10 TJ = 150 ° C urrent (urrent ( 100 100us erse Dr TJ = 25 ° C Drain CDrain C 1ms -I , RevSD 1 -I , I , D 10 TA= 25 ° C 10ms T = 150 ° C J 0.1 V G S = 0 V 1 Single Pulse 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 -VS D ,Source-to-Drain Voltage (V) -VD S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) 8.0 0.20 0.10 A) 6.0 V) nt ( e( 0.00 urre aacri Id = -250µA C 4.0 V -0.10 -I , Drain D2.0 ,V-GSh()t -0.20 -0.30 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , Case Temperature ( ° C) C T , Temperature ( °C ) J Fig 9. Maximum Drain Current Vs. Fig 10. Typical Vgs(th) Variance Vs. Case Temperature Juction Temperature 100 D = 0.50 ) Z thJA 10 00..1200 ( e 0.05 s n po 1 0.02 s e 0.01 R al PDM rm t1 he 0.1 t2 T SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ=PDMx ZthJA+ TA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) ) 0.10 Ω 0.10 ) Ω e( oage( tl 0.08 anescsti 0.08 V R e n ucr 0.06 Oe 0.06 Snoo--t 0.04 Id = -8.0A Soouc-r 0.04 VGS= - 4.5V Dar ,iSno() 0.02 Danonr-) t ,i 0.02 VGS = -10V RD ( S 0.00 RD 0.00 2 4 6 8 10 12 14 16 0 10 20 30 40 -VGS, Gate -to -Source Voltage ( V ) -ID , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs. Gate Voltage Drain Current 6 www.irf.com

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) SO-8 Package Outline Dimensions are shown in millimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX A 5 A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c .0075 .0098 0.19 0.25 6 H D .189 .1968 4.80 5.00 E 0.25 [.010] A E .1497 .1574 3.80 4.00 1 2 3 4 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 6X e L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 K x 45° A C y 0.10 [.004] 8X b A1 8X L 8X c 0.25 [.010] C A B 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW = WEEK INTERNATIONAL F7101 A = ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER www.irf.com 7

(cid:1)(cid:2)(cid:3)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com

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