Si4412ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Definition 30 0.024 at VGS = 10 V 8 (cid:129) TrenchFET® Power MOSFETs 0.035 at VGS = 4.5 V 6.6 (cid:129) Compliant to RoHS Directive 2002/95/EC SO-8 DD S 1 8 D S 2 7 D S 3 6 D GG G 4 5 D Top View SS Ordering Information: Si4412ADY-T1-E3 (Lead (Pb)-free) Si4412ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) NN--CChhaannnneell MMOOSSFFEETT ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID 68.4 54..86 A Pulsed Drain Current (10 µs Pulse Width) IDM 30 Continuous Source Current (Diode Conduction)a IS 2.3 1.2 TA = 25 °C 2.5 1.3 Maximum Power Dissipationa PD W TA = 70 °C 1.6 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 45 50 Maximum Junction-to-Ambienta RthJA Steady State 80 95 °C/W Maximum Junction-to-Foot Steady State RthJF 16 20 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71105 www.vishay.com S09-0868-Rev. C, 18-May-09 1

Si4412ADY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 8 A 0.020 0.024 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 6.6 A 0.029 0.035 Forward Transconductancea gfs VDS = 15 V, ID = 8 A 21 S Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg 16 20 Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 2 A 3 nC Gate-Drain Charge Qgd 1.5 Gate Resistance Rg 0.5 2.0 Ω Turn-On Delay Time td(on) 15 20 Rise Time tr VDD = 15 V, RL = 15 Ω 6 12 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 26 50 ns Fall Time tf 10 20 Source-Drain Reverse Recovery Time trr IF = 2.3 A, dI/dt = 100 A/µs 40 80 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 30 30 4 V 24 24 VGS = 10 V thru 5 V A) A) ( ( Current 18 Current 18 Drain 12 Drain 12 - D - D TC = -125 °C I I 6 3 V 6 25 °C - 55 °C 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71105 2 S09-0868-Rev. C, 18-May-09

Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.05 1200 0.04 1000 Ciss )Ω ( esistance 0.03 VGS = 4.5 V ance (pF) 800 - On-R 0.02 VGS = 10 V Capacit 600 S(on) C - 400 RD Coss 0.01 200 Crss 0.00 0 0 6 12 18 24 30 0 6 12 18 24 30 ID-DrainCurrent(A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 V) 8 VIDD =S 2= A15 V 1.6 VIDG =S 8= A10 V ource Voltage ( 6 n-Resistancealized) 11..24 S Om ate-to- 4 - S(on)(Nor 1.0 G D - R GS 2 V 0.8 0 0.6 0 4 8 12 16 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 0.10 ID = 3.9 A TJ = 150 °C )Ω 0.08 nt (A) 10 nce ( e Curre Resista 0.06 - SourcIS TJ = 25 °C - On-DS(on) 0.04 R 0.02 1 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71105 www.vishay.com S09-0868-Rev. C, 18-May-09 3

Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.4 50 0.2 40 ID = 250 µA nce (V) 0.0 W) 30 Varia -0.2 wer ( S(th) Po 20 G -0.4 V 10 -0.6 -0.8 0 -50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp Notes: ed Effeermal I 0.1 0.1 PDM malizTh 0.05 t1 Nor 1. Duty Cyclet,2 D = t1 0.02 t2 2. Per Unit Base = RthJA = 80°C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 zed Effehermal I 0.1 00.0.15 aliT m 0.02 or N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71105. www.vishay.com Document Number: 71105 4 S09-0868-Rev. C, 18-May-09

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