Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Definition 30 0.0135 at VGS = 10 V 10 (cid:129) TrenchFET® Power MOSFET 0.020 at VGS = 4.5 V 8 (cid:129) 100 % R Tested g (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Battery Switch (cid:129) Load Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free) Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID 180 76.5 A Pulsed Drain Current (10 µs Pulse Width) IDM 50 Continuous Source Current (Diode Conduction)a IS 2.3 1.26 TA = 25 °C 2.5 1.4 Maximum Power Dissipationa PD W TA = 70 °C 1.6 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 40 50 Maximum Junction-to-Ambienta RthJA Steady State 70 90 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72211 www.vishay.com S09-0705-Rev. D, 27-Apr-09 1

Si4410BDY Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 10 A 0.011 0.0135 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 5 A 0.0165 0.020 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 25 S Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.76 1.1 V Dynamicb Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 10 A 13 20 Total Gate Charge Qgt 25 40 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 10 A 5.5 Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 0.5 1.6 2.7 Ω Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = 25 V, RL = 25 Ω 10 15 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 40 60 ns Fall Time tf 15 25 Source-Drain Reverse Recovery Time trr IF = 2.3 A, dI/dt = 100 A/µs 35 70 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 50 VGS = 10 V thru 5 V 40 40 A) A) Current ( 30 4 V Current ( 30 Drain 20 Drain 20 - - D D I I TC = 125 °C 10 10 25 °C 2 V 3 V - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72211 2 S09-0705-Rev. D, 27-Apr-09

Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.030 2000 0.025 Ciss 1600 )Ω sistance( 0.020 VGS = 4.5 V ance (pF) 1200 Re 0.015 cit n- pa - Oon) 0.010 VGS = 10 V C -Ca 800 DS( Coss R 400 0.005 Crss 0.000 0 0 10 20 30 40 50 0 6 12 18 24 30 ID -Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 VDS = 15 V e (V) 8 ID = 10 A 1.6 VIDG =S 1=0 1 A0 V g ate-to-Source Volta 46 -On-Resistancen)(Normalized) 01..82 G o - DS( S R VG 2 0.4 0 0.0 0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.10 0.08 )Ω A) e( ce Current ( 10 TJ = 150 °C n-Resistanc 0.06 ID = 10 A - SourIS TJ = 25 °C - ORDS(on) 00..0024 1 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD -Source-to-Drain Voltage (V) VGS -Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72211 www.vishay.com S09-0705-Rev. D, 27-Apr-09 3

Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.6 50 0.4 ID = 250 µA 40 0.2 V) ce ( 0.0 W) 30 n aria -0.2 er ( TA = 25 °C V w S(th) -0.4 Po 20 G V -0.6 10 -0.8 -1.0 0 - 50 - 25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RD S(on)* 100 µs, 10 µs 10 A) ( 1 ms nt e urr C 1 10 ms n ai Dr 100 ms - D I 1 s 0.1 TA = 25 °C 10 s Single Pulse 100 s, DC 0.01 0.1 1 10 100 VDS -Drain-to-Source Voltage (V) * VGS >minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 1 nt Duty Cycle = 0.5 e Transiance e ed 0.2 ctivmp Notes: ed Effeermal I 0.1 0.1 PDM zh maliT 0.05 t1 Nor 1. Duty Cycle,t 2D = t1 0.02 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com Document Number: 72211 4 S09-0705-Rev. D, 27-Apr-09

Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp zed Effehermal I 0.1 00.0.15 aliT m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72211. Document Number: 72211 www.vishay.com S09-0705-Rev. D, 27-Apr-09 5

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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