Si4404DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS DS(on) D Available 30 0.0065 at VGS = 10 V 23 (cid:129) TrenchFET® Power MOSFET 0.008 at VGS = 4.5 V 17 (cid:129) 100 % R Tested g SO-8 D S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information:Si4404DY-T1-E3 (Lead (Pb)-free) Si4404DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2750 °°CC ID 2139 1152 A Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 TA = 25 °C 3.5 1.6 Maximum Power Dissipationa PD W TA = 70 °C 2.2 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 s 29 35 Maximum Junction-to-Ambienta RthJA Steady State 67 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71247 www.vishay.com S09-0228-Rev. H, 09-Feb-09 1

Si4404DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 23 A 0.0045 0.0065 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 17 A 0.0068 0.008 Forward Transconductancea gfs VDS = 15 V, ID = 23 A 80 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 36 55 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 23 A 15 nC Gate-Drain Charge Qgd 12 Gate Resistance Rg 1.5 2.2 3.7 Ω Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 15 V, RL = 15 Ω 15 23 Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 105 160 ns Fall Time tf 40 60 Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 50 80 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 60 60 50 VG S = 10 V thru 4 V 50 -)A( nruC niar terD 234000 A nrCnr -)(teru iaD D 234000 D I I T C = 125 °C 3 V 10 10 25 °C - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD S - Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71247 2 S09-0228-Rev. H, 09-Feb-09

Si4404DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.010 6000 5000 Ci ss 0.008 Ω) ( ecnats 0.006 VG S = 4.5 V ce (pF) 4000 iseR citan 3000 --nO 0.004 VG S = 10 V Capa )no C - 2000 (SD Co ss R 0.002 1000 Cr ss 0.000 0 0 10 20 30 40 50 60 0 6 12 18 24 30 ID - Drain Current (A) VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VD S = 15 V VG S = 10 V )V 8 ID = 23 A 1.6 ID = 23 A ( e g e a c tloV ecruoS 6 natsiseR-n )dezilam 11..24 -ot-etaG 4 -O )noSD((roN 1.0 - R S G 2 V 0.8 0 0.6 0 20 40 60 80 - 50 - 25 0 25 50 75 100 125 150 Qg-Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 60 0.010 0.008 Ω) - ) A ( t n e r r u C e c r u o S S 10 TJ = 150 °C TJ = 25 °C ( niR-O -ecatssen)no(S 00..000046 ID = 23 A I D R 0.002 1 0.000 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VS D - Source-to-Drain Voltage (V) VGS-Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71247 www.vishay.com S09-0228-Rev. H, 09-Feb-09 3

Si4404DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.4 60 0.2 ID = 250 µA 50 0.0 )V( ecn - 0.2 )W 40 airaV ( rew 30 )h - 0.4 oP t(S G 20 V - 0.6 - 0.8 10 - 1.0 0 - 50 - 25 0 25 50 75 100 125 150 10- 2 10- 1 1 10 100 600 TJ- Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 2 1 Duty Cycle = 0.5 tn e is ne ac erTnad 0.2 vitceffE depmI lam 0.1 0.1 NPo DteMs : ezilarehT 0.05 t 1 mroN 0.02 1. Duty Cyclet, 2 D = tt 12 2. Per Unit Base = Rt hJA = 67 °C/W Single Pulse 3. TJ M - TA = PD MZ t hJA (t) 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 tn e is ne earTcnad 0.2 ve itcepm 0.1 ffE Ila 0.1 dm ezilaTreh 0.05 m ro 0.02 N Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71247. www.vishay.com Document Number: 71247 4 S09-0228-Rev. H, 09-Feb-09

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