Si4202DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R () I (A) Q (Typ.) DS DS(on) D g Definition 0.014 at VGS = 10 V 12.1 (cid:129) TrenchFET® Power MOSFET 30 5.4 nC 0.017 at VGS = 4.5 V 11 (cid:129) 100 % Rg Tested (cid:129) 100 % UIS Tested (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Synchronous Buck SO-8 - Notebooks D1 D2 - Servers S1 1 8 D1 - STB G1 2 7 D1 S2 3 6 D2 G1 G2 G2 4 5 D2 Top View S1 S2 Ordering Information: Si4202DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 TC = 25 °C 12.1 TC = 70 °C 11 Continuous Drain Current (T = 150 °C) I J TA = 25 °C D 9.7a, b TA = 70 °C 8.2a, b A Pulsed Drain Current IDM 50 TC = 25 °C 3.1 Continuous Source Drain Diode Current IS TA = 25 °C 2a, b Avalanche Current IAS 15 L = 0 1 mH Single-Pulse Avalanche Energy EAS 11.25 mJ TC = 25 °C 3.7 TC = 70 °C 2.6 Maximum Power Dissipation TA = 25 °C PD 2.4a, b W TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t  10 s RthJA 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 °C/W. Document Number: 67092 www.vishay.com S10-2602-Rev. A, 15-Nov-10 1

Si4202DY Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ 33 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 8 A 0.0115 0.0140 Drain-Source On-State Resistancea RDS(on)  VGS = 4.5 V, ID = 5 A 0.0138 0.0170 Forward Transconductancea gfs VDS = 15 V, ID = 8 A 33 S Dynamicb Input Capacitance Ciss 710 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 146 pF Reverse Transfer Capacitance Crss 63 VDS = 15 V, VGS = 10 V, ID = 8 A 11.2 17 Total Gate Charge Qg 5.4 8 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 8 A 1.6 Gate-Drain Charge Qgd 1.6 Gate Resistance Rg f = 1 MHz 0.5 2.5 5  Turn-On Delay Time td(on) 11 22 Rise Time tr VDD = 15 V, RL = 3  18 35 Turn-Off Delay Time td(off) ID  5 A, VGEN = 4.5 V, Rg = 1  14 28 Fall Time tf 8 16 ns Turn-On Delay Time td(on) 8 16 Rise Time tr VDD = 15 V, RL = 3  9 18 Turn-Off Delay Time td(off) ID  5 A, VGEN = 10 V, Rg = 1  17 34 Fall Time tf 8 16 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 3.1 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.75 1.2 V Body Diode Reverse Recovery Time trr 13 26 ns Body Diode Reverse Recovery Charge Qrr 5.5 11 nC I = 5 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 5 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67092 2 S10-2602-Rev. A, 15-Nov-10

Si4202DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 50 10 VGS=10Vthru4V 40 8 nt (A) 30 ent (A) 6 I- Drain CurreD 20 VGS=3V I - Drain CurrD 4 TC=25 °C 10 2 TC=125 °C VGS=2V TC=- 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Transfer Characteristics Output Characteristics 0.020 1000 0.018 800 Ciss Ω) e ( F) c p Resistan 0.016 VGS=4.5V citance ( 600 On- 0.014 apa 400 - DS(on) VGS=10V C - C Coss R 0.012 200 Crss 0.010 0 0 10 20 30 40 50 0 6 12 18 24 30 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS On-Resistance vs. Drain Current Capacitance 10 2.0 ID=8A ID=8A e (V) 8 1.7 Gate-to-Source Voltag 46 VDS=10VVDS=15VVDS=20V - On-ResistanceDS(on)(Normalized) 11..14 VGS=1V0GVS=4.5V - S R G 2 0.8 V 0 0.5 0.0 2.4 4.8 7.2 9.6 12.0 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J Gate Charge On-Resistance vs. Junction Temperature Document Number: 67092 www.vishay.com S10-2602-Rev. A, 15-Nov-10 3

Si4202DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.060 ID=8A 10 0.048 Ω) urrent (A) 1 TJ=150 °C sistance ( 0.036 C e ce n-R I - SourS 0.1 TJ=25 °C R - ODS(on) 0.024 TJ=125 °C 0.01 0.012 TJ=25 °C 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 30 0.2 25 V) 0.0 20 e ( nc W) aria - 0.2 er ( 15 V w S(th) ID=5mA Po VG - 0.4 10 ID=250 μA - 0.6 5 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.01 1 100 T - Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 10 A) nt ( urre 1ms C 1 ain 10ms Dr - D 100ms I 0.1 1s 10s TA=25 °C DC SinglePulse BVDSSLimited 0.01 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area www.vishay.com Document Number: 67092 4 S10-2602-Rev. A, 15-Nov-10

Si4202DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 12 10 A) 8 nt ( e urr C 6 n ai Dr - D 4 I 2 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C Current Derating* 4.0 1.5 3.2 1.2 W) 2.4 W) 0.9 er ( er ( w w o o P 1.6 P 0.6 0.8 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67092 www.vishay.com S10-2602-Rev. A, 15-Nov-10 5

Si4202DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 Notes: edEffeermalI 0.1 0.05 PDM zh maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=110 °C/W 3.TJM-TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 EffemalI 0.1 eder 0.05 zh aliT m or 0.02 N SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67092. www.vishay.com Document Number: 67092 6 S10-2602-Rev. A, 15-Nov-10

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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