New Product Si4174DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) (cid:129) TrenchFET® Power MOSFET 0.0095 at VGS = 10 V 17 (cid:129) 100 % Rg and UIS Tested 30 8 nC 0.013 at VGS = 4.5 V 14.5 APPLICATIONS (cid:129) Notebook CPU Core - High-Side Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 TC = 25 °C 17 Continuous Drain Current (T = 150 °C) TC = 70 °C I 13.5 J TA = 25 °C D 12b, c TA = 70 °C 9.6b, c A Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS 2.42.b5, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Avalanche Energy EAS 20 mJ TC = 25 °C 5 Maximum Power Dissipation TTCA == 2750 °°CC PD 2.35.b2, c W TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 20 25 Notes: a. Based on T = 25 °C. C b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68998 www.vishay.com S-82773-Rev. A, 17-Nov-08 1

New Product Si4174DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ 34 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 10 A 0.0078 0.0095 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 7 A 0.0108 0.0130 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 30 S Dynamicb Input Capacitance Ciss 985 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 205 pF Reverse Transfer Capacitance Crss 76 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 18 27 8 12 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A 2.4 Gate-Drain Charge Qgd 2.3 Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6 Ω Turn-On Delay Time td(on) 14 25 Rise Time tr VDD = 15 V, RL = 1.5 Ω 12 24 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 19 35 Fall Time tf 9 18 ns Turn-On Delay Time td(on) 8 16 Rise Time tr VDD = 15 V, RL = 1.5 Ω 10 20 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 16 30 Fall Time tf 9 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.5 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.76 1.1 V Body Diode Reverse Recovery Time trr 14 28 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC I = 10 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68998 2 S-82773-Rev. A, 17-Nov-08

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 8.0 VGS=10thru4V 40 6.4 Current(A) 30 VGS=3V Current(A) 4.8 - DrainID 20 - DrainID 3.2 TC=T1C25= °2C5 °C 10 1.6 TC=- 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS-Drain-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.015 1300 Ciss Ω) 0.013 1040 ( stance 0.011 VGS=4.5V e(pF) 780 - On-ResiS(on) 0.009 VGS=10V C - Capacitanc 520 Coss D R 0.007 260 Crss 0.005 0 0 10 20 30 40 50 0 2.4 4.8 7.2 9.6 12 ID-DrainCurrent(A) VDS-Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID=10A ID=10A (V) 8 1.6 e ag ce VGS=10V e-to-SourceVolt 46 VDS=10V VDS=15V VDS=20V - On-Resistann)(Normalized) 11..24 VGS=4.5V - Gat RDS(o 1.0 S G 2 V 0.8 0 0.6 0.0 3.7 7.4 11.1 14.8 18.5 - 50 - 25 0 25 50 75 100 125 150 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68998 www.vishay.com S-82773-Rev. A, 17-Nov-08 3

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.05 ID=10A 10 0.04 TJ=150 °C Ω) (A) ce( urrent 1 TJ=25 °C sistan 0.03 C e Source 0.1 - On-R 0.02 - IS DS(on) TJ=125 °C 0.01 R 0.01 TJ=25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 80 0.2 64 V) 0 ( nce W) 48 a ( Vari - 0.2 ID=5mA wer GS(th) - 0.4 Po 32 V ID=250 µA 16 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ-Temperature(°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 10 A) ( nt 1ms e Curr 1 10ms n ai Dr 100ms - ID 1s 0.1 10s TA=25 °C SinglePulse DC BVDSSLimited 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 68998 4 S-82773-Rev. A, 17-Nov-08

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 20 16 A) ( ent 12 urr C n ai Dr 8 - D I 4 0 0 25 50 75 100 125 150 TC-CaseTemperature(°C) Current Derating* 6.0 2.0 4.8 1.6 W) 3.6 W) 1.2 ( ( wer wer Po 2.4 Po 0.8 1.2 0.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC-CaseTemperature(°C) TA-AmbientTemperature(°C) Power, Junction-to-Ambient Power Derating, Junction-to-Foot * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68998 www.vishay.com S-82773-Rev. A, 17-Nov-08 5

New Product Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 DutyCycle=0.5 nt e Transiance 0.2 ectiveImped 0.1 Notes: edEffermal 0.1 0.05 PDM zh maliT t1 Nor 0.02 1.DutyCyclet,2D= t1 t2 2.PerUnitBase=RthJA=85 °C/W SinglePulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 eI Effmal 0.1 eder alizTh 0.05 m or N 0.02 SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68998. www.vishay.com Document Number: 68998 6 S-82773-Rev. A, 17-Nov-08

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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