New Product Si4124DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Available 0.0075 at VGS = 10 V 20.5 (cid:129) TrenchFET® Power MOSFET 40 21 nC (cid:129) 100 % R Tested 0.009 at VGS = 4.5 V 18.7 g APPLICATIONS (cid:129) Synchronous Rectification SO-8 (cid:129) DC/DC D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free) Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 20.5 C T = 70 °C 16.4 C Continuous Drain Current (T = 150 °C) I J T = 25 °C D 13.6a, b A A T = 70 °C 10.9a, b A Pulsed Drain Current I 50 DM Avalanche Current I 33 AS L = 0.1 mH Avalanche Energy E 54 mJ AS T = 25 °C 4.7 C Continuous Source-Drain Diode Current I A T = 25 °C S 2.1a, b A T = 25 °C 5.7 C T = 70 °C 3.6 C Maximum Power Dissipation P W T = 25 °C D 2.5a, b A T = 70 °C 1.6a, b A Operating Junction and Storage Temperature Range T , T - 55 to 150 °C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s R 39 50 thJA °C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on T = 25 °C. C Document Number: 68601 www.vishay.com S09-0392-Rev. B, 09-Mar-09 1

New Product Si4124DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 46 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 14 A 0.0062 0.0075 Ω VGS = 4.5 V, ID = 12 A 0.0073 0.009 Forward Transconductancea gfs VDS = 15 V, ID = 16 A 55 S Dynamicb Input Capacitance Ciss 3540 Output Capacitance Coss VDS = 20 V, VGS = 0 V, f = 1 MHz 335 pF Reverse Transfer Capacitance Crss 142 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 16 A 51 77 21 32 nC Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 16 A 10.7 Gate-Drain Charge Qgd 3.0 Gate Resistance Rg f = 1 MHz 0.75 1.5 Ω Turn-on Delay Time td(on) 30 45 Rise Time tr VDD = 20 V, RL = 2 Ω 14 21 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 38 60 Fall Time tf 11 17 ns Turn-on Delay Time td(on) 14 21 Rise Time tr VDD = 20 V, RL = 2 Ω 10 15 Turn-Off Delay Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 32 50 Fall Time tf 8 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 32 A Pulse Diode Forward Current ISM 50 Body Diode Voltage VSD IS = 10 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr 19 38 nC I = 10 A, dI/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 12 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68601 2 S09-0392-Rev. B, 09-Mar-09

New Product Si4124DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 50 10 V = 10 V thru 4 V GS 40 8 A) A) nt ( 30 nt ( 6 e e Curr VGS=3V Curr n n Drai 20 Drai 4 - D - D TC=125 °C I I 10 2 TC=25 °C TC=- 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics 0.010 4000 C iss 0.008 VGS=4.5V 3200 Ω) nce ( pF) sista 0.006 VGS=10V nce ( 2400 e a n-R acit - OS(on) 0.004 C - Cap 1600 D R 0.002 800 Coss C rss 0.000 0 0 10 20 30 40 50 0 10 20 30 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.0 ID=16A VDS=10 V ID=14A VGS=10V V) 8 ate-to-Source Voltage ( 46 VDS=20V VDS=30 V - On-ResistanceS(on)(Normalized) 11..26 VGS=4.5V G D - GS 2 R 0.8 V 0 0.4 0 11 22 33 44 55 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J Gate Charge On-Resistance vs. Junction Temperature Document Number: 68601 www.vishay.com S09-0392-Rev. B, 09-Mar-09 3

New Product Si4124DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.03 T = 150 °C ID=14A J 10 Ω) Current (A) 1 TJ = 25 °C esistance ( 0.02 I - Source S 0.1 - On-RDS(on) 0.01 TJ=125 °C R 0.01 TJ=25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 170 0.3 ID=250 µA 136 V) nce ( 0.0 ID=5mA W) 102 - VariaS(th) - 0.3 Power ( 68 G V - 0.6 34 - 0.9 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 T - Junction Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by R * DS(on) 100 µs 10 A) nt ( 1 ms e Curr 1 10 ms n ai Dr 100 ms I - D 1 s 0.1 10 s T = 25 °C 100 s, DC A BVDSS Single Pulse Limited 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified DS GS DS(on) Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 68601 4 S09-0392-Rev. B, 09-Mar-09

New Product Si4124DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 25 20 A) ent ( 15 urr C n Drai 10 - D I 5 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C Current Derating*, Junction-to-Foot 7.0 1.80 5.6 1.44 W) 4.2 W) 1.08 er ( er ( w w Po 2.8 Po 0.72 1.4 0.36 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68601 www.vishay.com S09-0392-Rev. B, 09-Mar-09 5

New Product Si4124DY Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 Notes: ed Effeermal I 0.1 0.05 PDM zh maliT t1 Nor 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 Single Pulse 4. Surface Mounted 10-1 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 ed Effeermal I 0.1 0.05 zh aliT m or N 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68601. www.vishay.com Document Number: 68601 6 S09-0392-Rev. B, 09-Mar-09

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

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