New Product Si4090DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) (cid:129) 100 % Rg and UIS Tested 0.0100 at VGS = 10 V 19.7 (cid:129) Material categorization: 100 0.0105 at V = 7.5 V 19.2 27.9 nC For definitions of compliance please see GS www.vishay.com/doc?99912 0.0120 at V = 6.0 V 18 GS APPLICATIONS SO-8 (cid:129) DC/DC Primary Side Switch D (cid:129) Telecom/Server S 1 8 D (cid:129) Motor Drive Control S 2 7 D (cid:129) Synchronous Rectification S 3 6 D G G 4 5 D Top View S Ordering Information: Si4090DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C 19.7 TC = 70 °C 15.8 Continuous Drain Current (T = 150 °C) I J T = 25 °C D 13.2b, c A T = 70 °C 10.4b, c A A Pulsed Drain Current (t = 300 µs) IDM 70 TC = 25 °C 7 Continuous Source-Drain Diode Current I T = 25 °C S 3.1b, c A Single Pulse Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy EAS 45 mJ TC = 25 °C 7.8 TC = 70 °C 5 Maximum Power Dissipation P W T = 25 °C D 3.5b, c A T = 70 °C 2.2b, c A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t  10 s RthJA 29 35 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 Notes: a. Based on T = 25 °C. C b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 63917 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com S12-1135-Rev. A, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product Si4090DY Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient VDS/TJ 67 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 6.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2 3.3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 100 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A VGS 10 V, ID = 15 A 0.0080 0.0100 Drain-Source On-State Resistancea RDS(on) VGS 7.5 V, ID = 12 A 0.0085 0.0105  VGS 6.0 V, ID = 10 A 0.0090 0.0120 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 54 S Dynamicb Input Capacitance Ciss 2410 Output Capacitance Coss VDS = 50 V, VGS = 0 V, f = 1 MHz 790 pF Reverse Transfer Capacitance Crss 60 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 10 A 45.6 69 27.9 42 Gate-Source Charge Qgs VDS = 50 V, VGS = 6 V, ID = 10 A 8.5 nC Gate-Drain Charge Qgd 9.2 Output Charge Qoss VDS = 50 V, VGS = 0 V 63 95 Gate Resistance Rg f = 1 MHz 0.4 1.3 2.6  Turn-On Delay Time td(on) 16 32 Rise Time tr VDD = 50 V, RL = 5  11 22 Turn-Off Delay Time td(off) ID  10 A, VGEN = 7.5 V, Rg = 1  35 70 Fall Time tf 10 20 ns Turn-On Delay Time td(on) 14 28 Rise Time tr VDD = 50 V, RL = 5  10 20 Turn-Off Delay Time td(off) ID  10 A, VGEN = 10 V, Rg = 1  36 70 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 7 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 5 A 0.75 1.1 V Body Diode Reverse Recovery Time trr 49 95 ns Body Diode Reverse Recovery Charge Qrr 58 115 nC I = 10 A, di/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 21 ns Reverse Recovery Rise Time tb 28 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport@vishay.com Document Number: 63917 2 S12-1135-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product Si4090DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 70 20 V = 10 V thru 5 V GS 56 16 A) A) I - Drain Current (D 2482 VGS = 4 V I - Drain Current (D128 T = 12T5C °=C 2 5 °C C 14 4 VGS= 3 V TC= -55 °C 0 0 0 1 2 3 4 5 0.0 1.4 2.8 4.2 5.6 7.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0100 3200 C iss 0.0094 V = 6 V 2560 Ω) GS ce ( pF) sistan0.0088 VGS = 7.5 V ance (1920 Re cit Coss - On-DS(on)0.0082 VGS= 10 V C - Capa1280 R 0.0076 640 C rss 0.0070 0 0 14 28 42 56 70 0 20 40 60 80 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 ID = 10 A ID= 15 A V = 10 V V) 8 V = 50 V ed) 1.7 GS age ( DS maliz Volt Nor Gate-to-Source 46 VDS= 25 V VDS= 75 V On-Resistance ( 11..14 VG S= 6 V V - GS 2 - DS(on) 0.8 R 0 0.5 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 63917 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com S12-1135-Rev. A, 21-May-12 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product Si4090DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 0.05 I = 15 A D 10 0.04 ent (A) 1 TJ = 150 °C TJ = 25 °C ance (Ω) 0.03 e Curr Resist urc 0.1 On- 0.02 I - SoS - DS(on) TJ = 125 °C R 0.01 0.01 T = 25 °C J 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 V) 0 nce ( W) 120 a - Vari GS(th)-- 00..42 ID = 5 mA Power ( 80 V I = 250 μA D 40 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 T - Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I Limited DM 100 μs I Limited 10 D nt (A) 1 ms e urr 10 ms C 1 n Limited by R * ai DS(on) Dr - D 100 ms I 0.1 1 s T = 25 °C 10 s A Single Pulse BVDSS Limited DC 0.01 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient www.vishay.com For technical support, please contact: pmostechsupport@vishay.com Document Number: 63917 4 S12-1135-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product Si4090DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 21.0 16.8 A) nt ( 12.6 e urr C n Drai 8.4 - D I 4.2 0.0 0 25 50 75 100 125 150 T - Case Temperature (°C) C Current Derating* 10 2.0 8 1.6 W) 6 W) 1.2 er ( er ( w w o o P 4 P 0.8 2 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A Power, Junction-to-Foot Power, Junction-to-Ambient * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63917 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com S12-1135-Rev. A, 21-May-12 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

New Product Si4090DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 1 Duty Cycle = 0.5 nt e si Trannce 0.2 ective mpeda0.1 0.1 Notes: Normalized EffThermal I 00..0025 1P.DDMutyCyt1clet,2D= tt12 2.PerUnitBase=RthJA=80 °C/W Single Pulse 3.TJM-TA=PDMZthJA(t) 4.SurfaceMounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e si Trannce 0.2 e da ectivmpe 0.1 0.1 d Effmal I 0.05 alizeTher m or 0.02 N Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63917. www.vishay.com For technical support, please contact: pmostechsupport@vishay.com Document Number: 63917 6 S12-1135-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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