Si1865DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) DS2 DS(on) D Definition 0.215 at V = 4.5 V ± 1.2 (cid:129) 215 mΩ Low R TrenchFET® IN DS(on) 1.8 to 8 0.300 at V = 2.5 V ± 1.0 (cid:129) 1.8 V to 8 V Input IN (cid:129) 1.5 V to 8 V Logic Level Control 0.440 at V = 1.8 V ± 0.7 IN (cid:129) Low Profile, Small Footprint SC70-6 Package (cid:129) 2000 V ESD Protection On Input Switch, V ON/OFF DESCRIPTION (cid:129) Adjustable Slew-Rate (cid:129) 1.8 V Rated The Si1865DL includes a p- and p-channel MOSFET in a (cid:129) Compliant to RoHS Directive 2002/95/EC single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level- shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1865DL operates on supply lines from 1.8 V to 8 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS 20 IL = 1 A VO N/OFF = 3 V Ci = 10 µ F 4 2, 3 16 Co = 1 µ F tr VIN VOUT Q2 R1 6 6 C1 µs) 12 e ( tf m iT 8 td (off) 5 ON/OFF Co LOAD 4 Q1 td (on) Ci 0 1 0 2 4 6 8 10 R2 (kΩ) R2 R2 GND Note: Fcoomr Rbi2n astwioitncsh isnege v Tayrpiaictiaoln Cs hwaitrha cottehreisrt iVcIs N/ R1 Si1865DL Switching Variation R2 at V = 2.5 V, R1 = 20 kΩ IN COMPONENTS The Si1865DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift R1 Pull-Up Resistor Typical 10 kΩ to 1 mΩ* devices saves space by reducing external components. The R2 Optional Slew-Rate Control Typical 0 kΩ to 100 kΩ* slew rate is set externally so that rise-times can be tailored to C1 Optional Slew-Rate Control Typical 1000 pF different load types. * Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on. Document Number: 71297 www.vishay.com S10-1054-Rev. D, 03-May-10 1

Si1865DL Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1865DL SC70-6 Top View 4 2, 3 D2 Marking Code S2 Q2 R2 1 6 R1, C1 V A XX Y Y 6 Lot Traceability R1, C1 and Date Code D2 2 5 ON/OFF Part # Code 5 Q1 D2 3 4 S2 ON/OFF 1 Ordering Information: Si1865DL-T1-E3 (Lead (Pb)-free) Si1865DL-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Input Voltage VIN 8 V ON/OFF Voltage VON/OFF 8 Continuousa, b ± 1.2 Load Current Pulsedb, c IL ± 3 A Continuous Intrinsic Diode Conductiona IS - 0.4 Maximum Power Dissipationa PD 0.4 W Operating Junction and Storage Temperature Range T , T - 55 to 150 °C J stg ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω) ESD 2 kV THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (continuous current)a R 260 320 thJA °C/W Maximum Junction-to-Foot (Q2) RthJC 180 220 SPECIFICATIONS T = 25°C unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF Characteristics Reverse Leakage Current V V = 8 V, V = 0 V 1 µA IN IN ON/OFF Diode Forward Voltage I l = - 0.4 A 0.85 1.1 V Q S ON Characteristics Input Volatge V 1.8 8 V IN V = 1.5 , V = 4.5 V, I = 1.2 A 0.180 0.215 ON/OFF IN D R V = 1.5 , V = 2.5 V, I = 1.0 A 0.250 0.300 On-Resistance (P-Channel) at 1 A DS(on) ON/OFF IN D Ω V = 1.5 , V = 1.8 V, I = 0.7 A 0.367 0.440 ON/OFF IN D V ≤ 0.2 V, V = 5 V, V = 1.5 A 1 IN-OUT IN ON/OFF On-State (P-Channel) Drain-Current I A D(on) V ≤ 0.3 V, V = 3 V, V = 1.5 A 1 IN-OUT IN ON/OFF Notes: a) Surface mounted on FR4 board. b) V = 8 V, V = 8 V, T = 25 °C. IN ON/OFF A c) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71297 2 S10-1054-Rev. D, 03-May-10

Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 0.8 1.0 VO N/OFF = 1.5 V to 8 V VO N/OFF = 1.5 V to 8 V 0.8 0.6 ) V ( ) V ( 0.6 P P OR 0.4 T J = 125 °C OR T J = 125 °C V D T J = 25 °C V D 0.4 T J = 25 °C 0.2 0.2 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 IL (A) IL (A) VDROP vs. IL at VIN = 4.5 V VDROP vs. IL at VIN = 2.5 V 1.0 0.8 VO N/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 0.8 0.6 ()V 0.6 ) V ( PO TJ = 125 °C PO 0.4 VRD 0.4 TJ = 25 °C V RD T J = 125 °C 0.2 0.2 T J = 25 °C 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 IL (A) VI N (V) VDROP vs. IL at VIN = 1.8 V VDROP vs. IL at IL = 0.7 V 0.10 1.0 IL = 0.7 A IL = 0.7 A VO N/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 0.06 Ω) 0.8 )V VIN = 1.8 V ( ec ( ec 0.02 nats 0.6 nairaV VI N = 4.5 V iseR-n VRDPO- 0.02 -O )no(S 0.4 T J = 125 °C RS TJ = 25 °C - 0.06 0.2 - 0.10 0.0 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 TJ- Junction Temperature (°C) VIN (V) VDROP Variance vs. Junction Temperature On-Resistance vs. Input Voltage Document Number: 71297 www.vishay.com S10-1054-Rev. D, 03-May-10 3

Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1.5 20 IL = 0.7 A IL = 1 A VO N/OFF = 1.5 V to 8 V VO N/OFF = 3 V 1.3 16 Ci = 10 µ F ec Co = 1 µ F tf n a tsise ed) 1.1 s) 12 td(off) R-nO maliz VI N = 1.8 V e (µm - )no(Nor 0.9 iT 8 R(SD VI N = 4.5 V tr 0.7 4 td(on) 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 TJ- Junction Temperature (°C) R2 (kΩ) Normalized On-Resistance vs. Switching Variation Junction Temperature R2 at V = 1.8 V, R1 = 20 kΩ IN 20 30 16 IVCCL O io = = N= 1/ 1O1 0AF µ Fµ F F= 3 V tr 24 IVCCL O io = = N= 1/ 1O1 0AF µ Fµ F F= 3 V tr e (µs)m 12 tf e (µs)m 18 iT 8 iT 12 td (off) tf 4 6 td(on) td(off) td(on) 0 0 0 2 4 6 8 10 0 2 4 6 8 R2 (kΩ) R2 (kΩ) Switching Variation Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ R2 at VIN = 1.8 V, R1 = 20 kΩ 200 150 td(off) tf 160 tf 120 td (off) e (µs)m 120 IVCL O i ==N 1/1O 0AF Fµ F= 3 V e (µs)m 90 IVCL O i ==N 1/1O 0AF F µ =F 3 V iT 80 Co = 1 µ F iT 60 Co = 1 µF tr td (on) 40 30 tr td(on) 0 0 0 20 40 60 80 100 0 20 40 60 80 100 R2 (kΩ) R2 (kΩ) Switching Variation Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ R2 at VIN = 2.5 V, R1 = 300 kΩ www.vishay.com Document Number: 71297 4 S10-1054-Rev. D, 03-May-10

Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 120 tf 90 td (off) µs) IL = 1 A e ( 60 VO N/OFF = 3 V miT CCio = = 110 µ µFF tr td (on) 30 0 0 20 40 60 80 R2 (kΩ) Switching Variation R2 at V = 1.8 V, R1 = 300 kΩ IN 2 1 tn Duty Cycle = 0.5 e isnarTenac evitcdepm 0.2 Notes: e deffEI larem 0.1 00.1.05 P DM zlaroNimhT 0.02 12.. PDeurt yU Cntyi 1tc Bleat, 2s De == R thtt 12J A = 320 °C Single Pulse 3. TJ M - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71297. Document Number: 71297 www.vishay.com S10-1054-Rev. D, 03-May-10 5

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