Si1413EDH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A) Definition 0.115 at V = - 4.5 V - 2.9 (cid:129) TrenchFET® Power MOSFET: 1.8 V Rated GS (cid:129) ESD Protected: 3000 V - 20 0.155 at V = - 2.5 V - 2.4 GS (cid:129) Thermally Enhanced SC-70 Package 0.220 at V = - 1.8 V - 2.0 GS (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Load Switching (cid:129) PA Switch (cid:129) Level Switch SOT-363 D SC-70 (6-LEADS) D 1 6 D 3 k Marking Code G D 2 5 D BA XXY Y Lot Traceability G 3 4 S and Date Code Part # Code Top View S Ordering Information: Si1413EDH-T1-E3 (Lead (Pb)-free) Si1413EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V ± 12 GS T = 25 °C - 2.9 - 2.3 Continuous Drain Current (T = 150 °C)a A I J D T = 85 °C - 2.0 - 1.6 A A Pulsed Drain Current I - 8 DM Continuous Diode Current (Diode Conduction)a I - 1.4 - 0.9 S T = 25 °C 1.56 1.0 Maximum Power Dissipationa A P W D T = 85 °C 0.81 0.52 A Operating Junction and Storage Temperature Range T , T - 55 to 150 °C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 5 s 60 80 Maximum Junction-to-Ambienta R thJA Steady State 100 125 °C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71396 www.vishay.com S10-0935-Rev. B, 19-Apr-10 1

Si1413EDH Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V V = V , I = - 100 µA - 0.45 V GS(th) DS GS D V = 0 V, V = ± 4.5 V ± 1.5 µA DS GS Gate-Body Leakage I GSS V = 0 V, V = ± 12 V ± 10 mA DS GS V = - 16 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I µA DSS V = - 16 V, V = 0 V, T = 85 °C - 5 DS GS J On-State Drain Currenta I V = - 5 V, V = - 4.5 V - 4 A D(on) DS GS V = - 4.5 V, I = - 2.9 A 0.095 0.115 GS D Drain-Source On-State Resistancea R V = - 2.5 V, I = - 2.4 A 0.125 0.155 Ω DS(on) GS D V = - 1.8 V, I = - 1.0 A 0.180 0.220 GS D Forward Transconductancea g V = - 10 V, I = - 2.9 A 6 S fs DS D Diode Forward Voltagea V I = - 1.4 A, V = 0 V - 0.8 - 1.1 V SD S GS Dynamicb Total Gate Charge Q 5.6 8 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 2.9 A 1.2 nC gs DS GS D Gate-Drain Charge Q 1.2 gd Turn-On Delay Time t 0.75 1.1 d(on) Rise Time tr VDD = - 10 V, RL = 10 Ω 1.6 2.3 µs Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 3.9 5.5 Fall Time t 3.9 5.5 f Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 8 10 000 1000 A) 6 A) Current (m 4 Current (µ 11000 TJ = 150 °C Gate Gate I - GSS 2 I - GSS 1 TJ = 25 °C 0.1 0 0.01 0 3 6 9 12 15 18 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage www.vishay.com Document Number: 71396 2 S10-0935-Rev. B, 19-Apr-10

Si1413EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 8 8 V = 5 V thru 2.5 V GS T = - 55 °C C 6 6 25 °C A) 2 V A) nt ( nt ( 125 °C e e urr urr C 4 C 4 n n ai ai Dr Dr - D 1.5 V - D I I 2 2 1 V 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 1000 0.4 800 Ω) nce ( pF) Ciss sista 0.3 VGS = 1.8 V nce ( 600 e a n-R acit O p - S(on) 0.2 VGS = 2.5 V C - Ca 400 RD VGS = 4.5 V 0.1 200 Coss Crss 0.0 0 0.0 1.5 3.0 4.5 6.0 7.5 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V VGS = 4.5 V V) 4 ID = - 2.9 A 1.4 ID = - 2.9 A Source Voltage ( 3 On-Resistancemalized) 1.2 Gate-to- 2 - DS(on)(Nor 1.0 - GS 1 R 0.8 V 0 0.6 0.0 1.5 3.0 4.5 6.0 7.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71396 www.vishay.com S10-0935-Rev. B, 19-Apr-10 3

Si1413EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 0.5 0.4 nt (A) TJ = 150 °C Ωnce () e Curre 1 TJ = 25 °C Resista 0.3 ID = - 2.9 A I - SourcS - On-S(on) 0.2 D R 0.1 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 35 0.3 ID = 250 µA 28 V) 0.2 e ( anc W) 21 Varih) 0.1 ower ( S(t P 14 G 0.0 V - 0.1 7 - 0.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e si ne d Effective Tramal Impedanc 0.1 0.10.2 NPoDteMs: NormalizeTher 00..0025 1. Duty Cyt1clet,2 D = tt12 2. Per Unit Base = RthJA = 100 °C/W Single Pulse 3. TJM- TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com Document Number: 71396 4 S10-0935-Rev. B, 19-Apr-10

Si1413EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2 1 nt Duty Cycle = 0.5 e si ne ective Trampedanc 00..12 d Effmal I 0.1 0.05 zeer maliTh 0.02 or N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71396. Document Number: 71396 www.vishay.com S10-0935-Rev. B, 19-Apr-10 5

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