Si1305DL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET: 1.8 V VDS (V) RDS(on) () ID (A) (cid:129) Material categorization: 0.280 at V = - 4.5 V - 0.92 For definitions of compliance please see GS www.vishay.com/doc?99912 - 8 0.380 at VGS = - 2.5 V - 0.79 0.530 at V = - 1.8 V - 0.67 GS SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LB X Y Y Lot Traceability S 2 and Date Code Part # Code Top View Ordering Information: Si1305DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 8 TA = 25 °C - 0.92 - 0.86 Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID - 0.74 - 0.69 A Pulsed Drain Current IDM - 3 Continuous Diode Current (Diode Conduction)a IS - 0,28 - 0.24 TA = 25 °C 0.34 0.29 Maximum Power Dissipationa PD W TA = 70 °C 0.22 0.19 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t  5 s 315 375 Maximum Junction-to-Ambienta RthJA Steady State 360 430 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340 Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71076 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0631-Rev. G, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1305DL Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V V = V , I = - 250 µA - 0.45 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = ± 8 V ± 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current IDSS µA V = - 8 V, V = 0 V, T = 70 °C - 5 DS GS J On-State Drain Currenta ID(on) VDS -5 V, VGS = - 4.5 V - 3 A V = - 4.5 V, I = - 1 A 0.230 0.280 GS D Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 0.5 A 0.315 0.380  V = - 1.8 V, I = - 0.3 A 0.440 0.530 GS D Forward Transconductancea gfs VDS = - 5 V, ID = - 1 A 3.5 S Diode Forward Voltagea VSD IS = - 0.3 A, VGS = 0 V - 1.2 V Dynamicb Total Gate Charge Q 2.6 4 g Gate-Source Charge Qgs VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A 0.6 nC Gate-Drain Charge Q 0.5 gd Turn-On Delay Time t 8 15 d(on) Rise Time tr VDD = - 4 V, RL = 4  55 80 Turn-Off Delay Time td(off) ID  - 1 A, VGEN = - 4.5 V, Rg = 6  17 25 ns Fall Time t 12 20 f Source-Drain Reverse Recovery Time t I = - 1 A, dI/dt = 100 A/µs 27 45 rr F Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 6 VGS = 4.5 V TC = - 55 °C 4 V 3.5 V 5 25 °C 6 3 V 4 A) A) urrent ( 4 2.5 V urrent ( 3 125 °C C C n n Drai 2 V Drai 2 - D 2 - D I I 1.5 V 1 1 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS- Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71076 2 S13-0631-Rev. G, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.4 350 1.2 300 Ciss Ω - On-Resistance ()on) 001...680VGS = 1.8 V VGS = 2.5 V C - Capacitance (pF) 122505000 Coss RDS( 0.4 VGS = 4.5 V 100 Crss 0.2 50 0.0 0 0 1 2 3 4 5 6 7 0 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 8 1.6 VDS = 4 V VGS = 4.5 V V) ID = 1 A ed) ID = 1 A age ( 6 maliz 1.2 Volt Nor urce nce( o-So 4 sista 0.8 e-t Re Gat On- V -GS 2 - S(on) 0.4 D R 0 0.0 0 1 2 3 4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1.0 10 TJ = 150 °C 0.8 1 Ω) Current (A) 0.1 esistance ( 0.6 ID = 1 A urce On-R 0.4 I - SoS 0.01 TJ = 25 °C - DS(on) R 0.2 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71076 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0631-Rev. G, 25-Mar-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 20 0.3 16 ID = 250 µA V) 0.2 ce ( W) 12 Varian 0.1 wer ( TA = 25 °C h) Po 8 S(t G 0.0 V -0.1 4 -0.2 0 -50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 Notes: ed Effeermal I 0.1 0.1 PDM malizTh 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = t1 t2 2. Per Unit Base = RthJA = 360 °C/W Single Pulse 3. TJM− TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 nt Duty Cycle = 0.5 e ctive Transimpedance 0.2 zed Effehermal I 0.1 00..105 aliT m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71076. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71076 4 S13-0631-Rev. G, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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