Si1026X Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R () V (V) I (mA) DS(min) DS(on) GS(th) D Definition 60 1.40 at VGS = 10 V 1 to 2.5 500 (cid:129) Low On-Resistance: 1.40  (cid:129) Low Threshold: 2 V (typ.) (cid:129) Low Input Capacitance: 30 pF (cid:129) Fast Switching Speed: 15 ns (typ.) (cid:129) Low Input and Output Leakage (cid:129) ESD Protected: 2000 V (cid:129) Miniature Package (cid:129) Compliant to RoHS Directive 2002/95/EC BENEFITS SC-89 (cid:129) Low Offset Voltage S1 1 6 D1 (cid:129) Low-Voltage Operation (cid:129) High-Speed Circuits (cid:129) Low Error Voltage G1 2 5 G2 Marking Code: E (cid:129) Small Board Area D2 3 4 S2 APPLICATIONS (cid:129) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Top View Memories, Transistors, etc. (cid:129) Battery Operated Systems Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) (cid:129) Solid-State Relays ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TTAA == 2855 °°CC ID 322300 320250 mA Pulsed Drain Currentb IDM - 650 Continuous Source Current (Diode Conduction)a IS 450 380 TA = 25 °C 280 250 Maximum Power Dissipationa PD mW TA = 85 °C 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 www.vishay.com S10-2432-Rev. D, 25-Oct-10 1

Si1026X Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1 2.5 VDS = 0 V, VGS = ± 10 V ± 150 Gate-Body Leakage IGSS nA VDS = 0 V, VGS = ± 5 V ± 50 VDS = 60 V, VGS = 0 V 1 µA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 85 °C 10 VDS = 10 V, VGS = 4.5 V 500 On-State Drain Currenta ID(on) mA VDS = 7.5 V, VGS = 10 V 800 VGS = 4.5 V, ID = 200 mA 3.0 Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 500 mA 1.40  VGS = 10 V, ID = 500 mA, TJ = 125 °C 2.50 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 200 mS Diode Forward Voltagea VSD VGS = 0 V, IS = 200 mA 1.40 V Dynamicb Total Gate Charge Qg 600 Gate-Source Charge Qgs VDS = 10 V, ID = 250 mA, VGS = 4.5 V 120 pC Gate-Drain Charge Qgd 225 Input Capacitance Ciss 30 V = 25 V, V = 0 V, Output Capacitance Coss DS GS 6 pF f = 1 MHz Reverse Transfer Capacitance Crss 3 Switchingb, c Turn-On Time t(on) VDD = 30 V, RL = 150  15 ns Turn-Off Time t(off) ID = 200 mA, VGEN = 10 V, Rg = 10  20 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71434 2 S10-2432-Rev. D, 25-Oct-10

Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1200 6 V VGS = 10 V thru 7 V TJ = -55 °C 0.8 5 V 900 ent (A) 0.6 nt (mA) 25 °C - Drain CurrD 0.4 4 V - Drain CurreD 600 125 °C I I 300 0.2 3 V 0.0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 50 3.5 VGS= 0 V f = 1 MHz 40 Ω) 3.0 stance ( 2.5 e (pF) 30 - On-ResiS(on) 12..50 VGS = 4.5 V VGS = 10 V C- Capacitanc 20 Ciss RD 1.0 Coss 10 0.5 Crss 0.0 0 0 200 400 600 800 1000 0 5 10 15 20 25 ID - Drain Current (mA) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 7 2.0 6 VDS = 10 V VGS = 10 V at 500 mA V) ID = 250 mA 1.6 age ( 5 ce - Gate-to-Source Volt 234 - On-ResistanRDS(on)(Normalized) 01..28 VatG 2S0 =0 4m.5A V S G 0.4 V 1 0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg- Total Gate Charge (nC) TJ- Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71434 www.vishay.com S10-2432-Rev. D, 25-Oct-10 3

Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 5 VGS = 0 V Ω) 4 nt (A) 100 ance ( Curre TJ = 125 °C Resist 3 ource - On- 2 ID = 500 mA - SS 10 TJ = 25 °C S(on) I RD ID = 200 mA 1 TJ = -55 °C 1 0 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD- Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 0.2 V) ID = 250 µA e ( -0 c n a ari V -0.2 h) S(t VG -0.4 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 TJ- Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 Notes: ed Effeermal I 0.1 0.05 PDM alizTh t1 orm 0.02 1. Duty Cyclet,2 D = t1 N t2 2. Per Unit Base = RthJA = 500°C/W Single Pulse 3. TJM- TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71434. www.vishay.com Document Number: 71434 4 S10-2432-Rev. D, 25-Oct-10

Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) 2 3 D aaa C E1/2 A4 e1 2x 4 D B 6 5 4 SECTION B-B E/2 C 6 2 3 E1 E 2x DETAIL “A” aaa C 1 2 3 2x 5 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate MILLIMETERS DIM. burrs. Mold flush, protrusions or gate burrs shall not exceed MIN. NOM. MAX. 0.15 mm per dimension E1 does not include interlead flash A 0.56 0.58 0.60 or protrusion, interlead flash or protrusion shall not exceed A1 0 0.02 0.10 0.15 mm per side. b 0.15 0.22 0.30 3. Dimensions D and E1 are determined at the outmost extremes c 0.10 0.14 0.18 of the plastic body exclusive of mold flash, the bar burrs, gate D 1.50 1.60 1.70 burrs and interlead flash, but including any mismatch between E 1.50 1.60 1.70 the top and the bottom of the plastic body. E1 1.15 1.20 1.25 4. Datums A, B and D to be determined 0.10 mm from the lead tip. e 0.45 0.50 0.55 e1 0.95 1.00 1.05 5. Terminal numbers are shown for reference only. L 0.25 0.35 0.50 6. These dimensions apply to the flat section of the lead between L1 0.10 0.20 0.30 0.08 mm and 0.15 mm from the lead tip. C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Revision: 11-Aug-14 1 Document Number: 71612 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) 9 8) 1 7 0 4 0. 0. ( 9 3) 1 8) 6 5 3 9 0 7 0 7 0. 1. 0. 0. ( ( 0.012 0.020 (0.300) (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72605 www.vishay.com Revision: 21-Jan-08 21

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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