Si1022R Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R () V (V) I (mA) DS(min.) DS(on) GS(th) D Definition 60 1.25 at VGS = 10 V 1 to 2.5 330 (cid:129) TrenchFET® Power MOSFETs (cid:129) Low On-Resistance: 1.25  (cid:129) Low Threshold: 2.5 V (cid:129) Low Input Capacitance: 30 pF (cid:129) Fast Switching Speed: 25 ns (cid:129) Low Input and Output Leakage SC-75A (cid:129) Miniature Package (SOT-416) (cid:129) ESD Protected: 2000 V (cid:129) Compliant to RoHS Directive 2002/95/EC G 1 APPLICATIONS 3 D (cid:129) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. S 2 Marking Code: E (cid:129) Battery Operated Systems (cid:129) Solid State Relays Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) BENEFITS (cid:129) Low Offset Voltage (cid:129) Low-Voltage Operation (cid:129) High-Speed Circuits (cid:129) Low Error Voltage (cid:129) Small Board Area ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TA = 25 °C ID 330 TA = 85 °C 240 mA Pulsed Drain Currenta IDM 650 Power Dissipationa TA = 25 °C PD 250 mW TA = 85 °C 130 Thermal Resistance, Maximum Junction-to-Ambienta RthJA 500 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Notes: a. Surface mounted on FR4 board, power applied for t  10 s. Document Number: 71331 www.vishay.com S10-2687-Rev. F, 22-Nov-10 1

Si1022R Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1 2.5 VDS = 0 V, VGS = ± 10 V ± 150 Gate-Body Leakage IGSS TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 20 nA VDS = 50 V, VGS = 0 V 10 Zero Gate Voltage Drain Current IDSS TJ = 85 °C 100 VDS = 60 V, VGS = 0 V 1 µA V = 10 V, V = 4.5 V 500 On-State Drain Currenta ID(on) DS GS mA V = 7.5 V, V = 10 V 800 DS GS VGS = 4.5 V, ID = 200 mA 3.0 Drain-Source On-State Resistancea RDS(on) TJ = 125 °C 5.0  VGS = 10 V, ID = 500 mA 1.25 TJ = 125 °C 2.25 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 100 mS Diode Forward Voltagea VSD VGS = 0 V, IS = 200 mA 1.3 V Dynamicb Input Capacitance Ciss 30 Output Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 6 pF Reverse Transfer Capacitance Crss 2.5 Gate Charge Qg VDS = 10 V, ID = 250 mA, VGS = 4.5 V 0.6 nC Switchingb, c Turn-On Time t(on) VDD = 30 V, RL = 150 , 25 ns Turn-Off Time t(off) ID = 200 mA, VGEN = 10 V, Rg = 10  35 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71331 2 S10-2687-Rev. F, 22-Nov-10

Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 1.0 1200 6 V VGS = 10 V thru 7 V TJ = - 55 °C 0.8 5 V 900 ent (A) 0.6 nt (mA) 25 °C Curr urre 600 125 °C - Drain ID 0.4 4 V - Drain CD I 300 0.2 3 V 0.0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 50 3.5 VGS= 0 V f = 1 MHz 40 Ω) 3.0 e ( F) c p an 2.5 e ( 30 Resist 2.0 VGS = 4.5 V citanc Ciss n- pa - Oon) 1.5 VGS = 10 V C - Ca 20 DS( 1.0 Coss R 10 0.5 Crss 0.0 0 0 200 400 600 800 1000 0 5 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 7 2.0 6 VDS = 10 V VGS = 10 V at 500 mA V) ID = 250 mA 1.6 e ( Source Voltag 45 n-Resistance malized) 1.2 VatG 2S0 =0 4m.5A V Gate-to- 3 - OS(on)(Nor 0.8 - S 2 RD G 0.4 V 1 0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71331 www.vishay.com S10-2687-Rev. F, 22-Nov-10 3

Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 1000 5 VGS = 0 V 4 Ω) Current (A) 100 TJ = 125 °C esistance ( 3 - Source IS 10 TJ = 25 °C - On-RRDS(on) 12 ID = 200 mA ID = 500 mA TJ = -55 °C 1 0 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS- Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.4 3 0.2 2.5 ID = 250 µA e (V) 0.0 2 nc W) Varia -0.2 wer ( 1.5 h) Po GS(t -0.4 1 V TA = 25 °C -0.6 0.5 -0.8 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 2 nt 1 e Duty Cycle = 0.5 si ne ac ve Tredan 0.2 ctimp Effeal I 0.1 Notes: alized Therm 0.1 0.05 PDM Norm 0.02 1. Duty Cyt1clet,2 D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W Single Pulse 3. TJM- TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71331. www.vishay.com Document Number: 71331 4 S10-2687-Rev. F, 22-Nov-10

Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 1 2 DbbbD D A e2 2X D 3 3 B1(b1) L L1 e1 3 E/2 1 2 E1 E 1 1 1 2 DbbbC 2X B B D bbbC 3 4 B e3 2X 2XB1 B1 b1 dddM C A –B D With Tin Planting c1 C Base Metal Section B-B 5 A2 A Dbbb C 4X Seating Plane D A1 DWG: 5868 Notes MILLIMETERS DIM. NOTE Dimensions in millimeters will govern. MIN. NOM. MAX. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed A - - 0.80 0.10 mm per end. Dimension E1 does not include Interlead flash A1 0.00 - 0.10 or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. A2 0.65 0.70 0.80 2.Dimensions D and E1 are determined at the outmost extremes of B1 0.19 - 0.24 5 the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top b1 0.17 - 0.21 and bottom of the plastic body. c 0.13 - 0.15 5 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. c1 0.10 - 0.12 5 5.These dimensions apply to the flat section of the lead between D 1.48 1.575 1.68 1, 2 0.08 mm and 0.15 mm from the lead tip. E 1.50 1.60 1.70 E1 0.66 0.76 0.86 1, 2 DIMENSIONS TOLERANCES e1 0.50 BSC aaa 0.10 e2 1.00 BSC bbb 0.10 e3 0.50 BSC ccc 0.10 L 0.15 0.205 0.30 ddd 0.10  L1 0.40 ref. L2 0.15 BSC q 0° - 8° q1 4° - 10° C15-1445-Rev. F, 23-Nov-15 1 Document Number: 71348 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) 0.071 1.803) 031 798) ( 0. 0. ( 0 3) 2 0 0 5 0. 0. ( 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72603 www.vishay.com Revision: 21-Jan-08 19

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SI1022R-T1 SI1022R-T1-E3 SI1022R-T1-GE3