Si1013R/X Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R () I (mA) DS DS(on) D Definition 1.2 at VGS = - 4.5 V - 350 (cid:129) High-Side Switching - 20 1.6 at VGS = - 2.5 V - 300 (cid:129) Low On-Resistance: 1.2  (cid:129) Low Threshold: 0.8 V (Typ.) 2.7 at VGS = - 1.8 V - 150 (cid:129) Fast Switching Speed: 14 ns (cid:129) 1.8 V Operation (cid:129) TrenchFET® Power MOSFETs (cid:129) 2000 V ESD Protection (cid:129) Compliant to RoHS Directive 2002/95/EC SC-75A or SC-89 APPLICATIONS (cid:129) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, G 1 Memories (cid:129) Battery Operated Systems 3 D (cid:129) Power Supply Converter Circuits SC-75A (SOT-416): (cid:129) Load/Power Switching Cell Phones, Pagers Si1013R - Marking Code D S 2 SC-89 (SOT-490): Si1013X - Marking Code B BENEFITS Top View (cid:129) Ease in Driving Switches (cid:129) Low Offset (Error) Voltage Ordering Information: (cid:129) Low-Voltage Operation Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) (cid:129) High-Speed Circuits (cid:129) Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C)b TTAA == 2855 °°CC ID -- 340000 -- 237550 mA Pulsed Drain Currenta IDM - 1000 Continuous Source Current (Diode Conduction)b IS - 275 - 250 TA = 25 °C 175 150 Maximum Power Dissipationb for SC-75 TA = 85 °C 90 80 PD mW TA = 25 °C 275 250 Maximum Power Dissipationb for SC-89 TA = 85 °C 160 140 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. Document Number: 71167 www.vishay.com S10-2432-Rev. D, 25-Oct-10 1

Si1013R/X Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) A Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1 ± 2 µA VDS = - 16 V, VGS = 0 V - 0.3 - 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V, TJ = 85 °C - 5 µA On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 700 mA VGS = - 4.5 V, ID = - 350 mA 0.8 1.2 Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 300 mA 1.2 1.6  VGS = - 1.8 V, ID = - 150 mA 1.8 2.7 Forward Transconductancea gfs VDS= - 10 V, ID = - 250 mA 0.4 S Diode Forward Voltagea VSD IS = - 150 mA, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg 1500 Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA 150 pC Gate-Drain Charge Qgd 450 Turn-On Delay Time td(on) 5 Rise Time tr VDD = - 10 V, RL = 47  9 ns Turn-Off Delay Time td(off) ID  - 200 mA, VGEN = - 4.5 V, Rg = 10  35 Fall Time tf 11 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values. 1.0 1000 VGS = 5 V thru 3 V 2.5 V TJ = - 55 °C 0.8 800 25 °C ent (A) 0.6 nt (mA) 600 125 °C Curr 2 V urre - Drain D 0.4 1.8 V - Drain C 400 I D I 0.2 200 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71167 2 S10-2432-Rev. D, 25-Oct-10

Si1013R/X Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 4.0 120 100 3.2 ) nce ( VG S = 1.8 V pF) 80 Ci s s sista 2.4 nce ( e a n-R VG S = 2.5 V acit 60 O p - 1.6 Ca S(on) VG S = 4.5 V C - 40 RD Co s s 0.8 20 Cr ss 0.0 0 0 200 400 600 800 1000 0 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VD S = 10 V ID = 250 mA V) 4 1.4 Gate-to-Source Voltage ( 23 - On-Resistance DS(on)(Normalized) 11..02 IVDG =S 3=5 40. 5m VAVID G =S 1=5 10. 8m VA - R GS 1 0.8 V 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1000 5 TJ = 125 °C 4 ) mA) ce ( e Current ( 100 TJ = 25 °C TJ = - 55 °C n-Resistan 3 ID = 350 mA c O I - SourS 10 - RDS(on) 2 ID = 200 mA 1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71167 www.vishay.com S10-2432-Rev. D, 25-Oct-10 3

Si1013R/X Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 0.3 3.0 0.2 2.5 ID = 0.25 mA nce (V) 0.1 A) 2.0 a µ V arih) 0.0 - (GS S 1.5 VGS = 4.5 V S(t I G - 0.1 1.0 V - 0.2 0.5 - 0.3 0.0 - 50 - 25 0 25 50 75 100 125 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature I vs. Temperature GSS 7 V) e ( g 6 a olt V n 5 w o d k ea 4 Br e c ur 3 o S o- e-t 2 at G - S S 1 V G B 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BV vs. Temperature GSS 2 1 nt Duty Cycle = 0.5 e e T ransiedance 0.2 ctivmp Notes: ed Ef feermal I 0.1 0.1 P DM zh maliT 0.05 t1 Nor 0.02 1. Duty Cycle,t 2 D = t1 t2 2. Per Unit Base = R th JA = 833 °C/W 3. T JM - T A = P DMZ th JA (t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) www.vishay.com Document Number: 71167 4 S10-2432-Rev. D, 25-Oct-10

Si1013R/X Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted) A 2 1 Duty Cycle = 0.5 e c n a d 0.2 e p m al I 0.1 m er 0.1 h 0.05 T 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71167. Document Number: 71167 www.vishay.com S10-2432-Rev. D, 25-Oct-10 5

Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 1 2 DbbbD D A e2 2X D 3 3 B1(b1) L L1 e1 3 E/2 1 2 E1 E 1 1 1 2 DbbbC 2X B B D bbbC 3 4 B e3 2X 2XB1 B1 b1 dddM C A –B D With Tin Planting c1 C Base Metal Section B-B 5 A2 A Dbbb C 4X Seating Plane D A1 DWG: 5868 Notes MILLIMETERS DIM. NOTE Dimensions in millimeters will govern. MIN. NOM. MAX. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed A - - 0.80 0.10 mm per end. Dimension E1 does not include Interlead flash A1 0.00 - 0.10 or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. A2 0.65 0.70 0.80 2.Dimensions D and E1 are determined at the outmost extremes of B1 0.19 - 0.24 5 the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top b1 0.17 - 0.21 and bottom of the plastic body. c 0.13 - 0.15 5 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. c1 0.10 - 0.12 5 5.These dimensions apply to the flat section of the lead between D 1.48 1.575 1.68 1, 2 0.08 mm and 0.15 mm from the lead tip. E 1.50 1.60 1.70 E1 0.66 0.76 0.86 1, 2 DIMENSIONS TOLERANCES e1 0.50 BSC aaa 0.10 e2 1.00 BSC bbb 0.10 e3 0.50 BSC ccc 0.10 L 0.15 0.205 0.30 ddd 0.10  L1 0.40 ref. L2 0.15 BSC q 0° - 8° q1 4° - 10° C15-1445-Rev. F, 23-Nov-15 1 Document Number: 71348 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) 0.071 1.803) 031 798) ( 0. 0. ( 0 3) 2 0 0 5 0. 0. ( 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72603 www.vishay.com Revision: 21-Jan-08 19

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: SI1013R-T1 SI1013X-T1 SI1013R-T1-E3 SI1013X-T1-E3 SI1013R-T1-GE3 SI1013X-T1-GE3